Page 31 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFN36N60
IXYS

MOSFET N-CH 600V 36A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,616
IXTK110N20L2
IXYS

MOSFET N-CH 200V 110A TO-264

Package: TO-264-3, TO-264AA

Stock7,728
IXFR80N50Q3
IXYS

MOSFET N-CH 500V 50A ISOPLUS247

Package: TO-247-3

Stock7,408
IXFN64N60P
IXYS

MOSFET N-CH 600V 50A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,272
IXTH1N200P3
IXYS

MOSFET N-CH 2000V 1A TO-247

Package: TO-247-3

Stock5,264
IXFX320N17T2
IXYS

MOSFET N-CH 170V 320A PLUS247

Package: TO-247-3

Stock4,096
IXFK34N80
IXYS

MOSFET N-CH 800V 34A TO-264AA

Package: TO-264-3, TO-264AA

Stock6,080
IXFN73N30
IXYS

MOSFET N-CH 300V 73A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,492
IXFX44N60
IXYS

MOSFET N-CH 600V 44A PLUS247

Package: TO-247-3

Stock103,464
IXFN48N60P
IXYS

MOSFET N-CH 600V 40A SOT-227

Package: SOT-227-4, miniBLOC

Stock7,168
IXTA1N200P3HV
IXYS

MOSFET N-CH 2000V 1A TO-263HV

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,252
IXFX120N20
IXYS

MOSFET N-CH 200V 120A PLUS247

Package: TO-247-3

Stock103,464
IXFK90N20Q
IXYS

MOSFET N-CH 200V 90A TO-264AA

Package: TO-264-3, TO-264AA

Stock4,848
IXFX32N100P
IXYS

MOSFET N-CH 1000V 32A PLUS247

Package: TO-247-3

Stock4,896
IXFX94N50P2
IXYS

MOSFET N-CH 500V 94A PLUS247

Package: TO-247-3

Stock11,112
IXFK64N60P
IXYS

MOSFET N-CH 600V 64A TO-264

Package: TO-264-3, TO-264AA

Stock7,776
IXFK94N50P2
IXYS

MOSFET N-CH 500V 94A TO264

Package: TO-264-3, TO-264AA

Stock6,416
IXTH67N10
IXYS

MOSFET N-CH 100V 67A TO247AD

Package: TO-247-3

Stock7,200
IXFX80N60P3
IXYS

MOSFET N-CH 600V 80A PLUS247

Package: TO-247-3

Stock4,272
IXFH24N90P
IXYS

MOSFET N-CH TO-247

Package: TO-247-3

Stock6,528

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN36N60	IXYS	MOSFET N-CH 600V 36A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,616	MOSFET (Metal Oxide)	600V	36A	10V	4.5V @ 8mA	325nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	180 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTK110N20L2	IXYS	MOSFET N-CH 200V 110A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,728	MOSFET (Metal Oxide)	200V	110A (Tc)	10V	4.5V @ 3mA	500nC @ 10V	23000pF @ 25V	±20V	-	960W (Tc)	24 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFR80N50Q3	IXYS	MOSFET N-CH 500V 50A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock7,408	MOSFET (Metal Oxide)	500V	50A (Tc)	10V	6.5V @ 8mA	200nC @ 10V	10000pF @ 25V	±30V	-	570W (Tc)	72 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXFN64N60P	IXYS	MOSFET N-CH 600V 50A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 96 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,272	MOSFET (Metal Oxide)	600V	50A	10V	5V @ 8mA	200nC @ 10V	12000pF @ 25V	±30V	-	700W (Tc)	96 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTH1N200P3	IXYS	MOSFET N-CH 2000V 1A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 40 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,264	MOSFET (Metal Oxide)	2000V	1A (Tc)	10V	4V @ 250µA	23.5nC @ 10V	646pF @ 25V	±20V	-	125W (Tc)	40 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFX320N17T2	IXYS	MOSFET N-CH 170V 320A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1670W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,096	MOSFET (Metal Oxide)	170V	320A (Tc)	10V	5V @ 8mA	640nC @ 10V	45000pF @ 25V	±20V	-	1670W (Tc)	5.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK34N80	IXYS	MOSFET N-CH 800V 34A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,080	MOSFET (Metal Oxide)	800V	34A (Tc)	10V	5V @ 8mA	270nC @ 10V	7500pF @ 25V	±20V	-	560W (Tc)	240 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFN73N30	IXYS	MOSFET N-CH 300V 73A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 73A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,492	MOSFET (Metal Oxide)	300V	73A	10V	4V @ 8mA	360nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	45 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFX44N60	IXYS	MOSFET N-CH 600V 44A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	44A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	8900pF @ 25V	±20V	-	560W (Tc)	130 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFN48N60P	IXYS	MOSFET N-CH 600V 40A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8860pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,168	MOSFET (Metal Oxide)	600V	40A	10V	5.5V @ 8mA	150nC @ 10V	8860pF @ 25V	±30V	-	625W (Tc)	140 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTA1N200P3HV	IXYS	MOSFET N-CH 2000V 1A TO-263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 40 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,252	MOSFET (Metal Oxide)	2000V	1A (Tc)	10V	4V @ 250µA	23.5nC @ 10V	646pF @ 25V	±20V	-	125W (Tc)	40 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFX120N20	IXYS	MOSFET N-CH 200V 120A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	200V	120A (Tc)	10V	4V @ 8mA	300nC @ 10V	9100pF @ 25V	±20V	-	560W (Tc)	17 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK90N20Q	IXYS	MOSFET N-CH 200V 90A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,848	MOSFET (Metal Oxide)	200V	90A (Tc)	10V	4V @ 4mA	190nC @ 10V	6800pF @ 25V	±20V	-	500W (Tc)	22 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFX32N100P	IXYS	MOSFET N-CH 1000V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,896	MOSFET (Metal Oxide)	1000V	32A (Tc)	10V	6.5V @ 1mA	225nC @ 10V	14200pF @ 25V	±30V	-	960W (Tc)	320 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX94N50P2	IXYS	MOSFET N-CH 500V 94A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1300W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock11,112	MOSFET (Metal Oxide)	500V	94A (Tc)	10V	5V @ 8mA	220nC @ 10V	13700pF @ 25V	±30V	-	1300W (Tc)	55 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK64N60P	IXYS	MOSFET N-CH 600V 64A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 96 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,776	MOSFET (Metal Oxide)	600V	64A (Tc)	10V	5V @ 8mA	200nC @ 10V	12000pF @ 25V	±30V	-	1040W (Tc)	96 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK94N50P2	IXYS	MOSFET N-CH 500V 94A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1300W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,416	MOSFET (Metal Oxide)	500V	94A (Tc)	10V	5V @ 8mA	220nC @ 10V	13700pF @ 25V	±30V	-	1300W (Tc)	55 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTH67N10	IXYS	MOSFET N-CH 100V 67A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 33.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,200	MOSFET (Metal Oxide)	100V	67A (Tc)	10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	±20V	-	300W (Tc)	25 mOhm @ 33.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFX80N60P3	IXYS	MOSFET N-CH 600V 80A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1300W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,272	MOSFET (Metal Oxide)	600V	80A (Tc)	10V	5V @ 8mA	190nC @ 10V	13100pF @ 25V	±30V	-	1300W (Tc)	70 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFH24N90P	IXYS	MOSFET N-CH TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,528	MOSFET (Metal Oxide)	900V	24A (Tc)	10V	6.5V @ 1mA	130nC @ 10V	7200pF @ 25V	±30V	-	660W (Tc)	420 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK64N50P	IXYS	MOSFET N-CH 500V 64A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock14,400	MOSFET (Metal Oxide)	500V	64A (Tc)	10V	5.5V @ 8mA	150nC @ 10V	8700pF @ 25V	±30V	-	830W (Tc)	85 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFT24N90P	IXYS	MOSFET N-CH TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,624	MOSFET (Metal Oxide)	900V	24A (Tc)	10V	6.5V @ 1mA	130nC @ 10V	7200pF @ 25V	±30V	-	660W (Tc)	420 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFK140N25T	IXYS	MOSFET N-CH 250V 140A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,424	MOSFET (Metal Oxide)	250V	140A (Tc)	10V	5V @ 4mA	255nC @ 10V	19000pF @ 25V	±20V	-	960W (Tc)	17 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTH64N65X	IXYS	MOSFET N-CH 650V 64A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,032	MOSFET (Metal Oxide)	650V	64A (Tc)	10V	5V @ 250µA	143nC @ 10V	5500pF @ 25V	±30V	-	890W (Tc)	51 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH30N50L2	IXYS	MOSFET N-CH 500V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	4.5V @ 250µA	240nC @ 10V	8100pF @ 25V	±20V	-	400W (Tc)	200 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH40N30	IXYS	MOSFET N-CH 300V 40A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock33,156	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 250µA	220nC @ 10V	4600pF @ 25V	±20V	-	300W (Tc)	85 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTR48P20P	IXYS	MOSFET P-CH 200V 30A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock4,624	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4.5V @ 250µA	103nC @ 10V	5400pF @ 25V	±20V	-	190W (Tc)	93 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTR16P60P	IXYS	MOSFET P-CH 600V 10A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 790 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,792	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	92nC @ 10V	5120pF @ 25V	±20V	-	190W (Tc)	790 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?