Page 34 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFN120N65X2
IXYS

MOSFET N-CH 650V 108A SOT-227

Package: SOT-227-4, miniBLOC

Stock3,776
IXFK24N100F
IXYS

MOSFET N-CH 1KV 24A TO264

Package: TO-264-3, TO-264AA

Stock4,928
IXFX24N100F
IXYS

MOSFET N-CH 1KV 24A PLUS247-3

Package: TO-247-3

Stock3,936
IXFZ140N25T
IXYS

MOSFET N-CH 250V 100A DE475

Package: DE475

Stock4,672
IXFN170N25X3
IXYS

MOSFET N-CH 250V 170A SOT227B

Package: SOT-227-4, miniBLOC

Stock5,120
IXTN102N65X2
IXYS

MOSFET N-CH 650V 76A X2 SOT-227

Package: SOT-227-4, miniBLOC

Stock4,848
IXFK21N100F
IXYS

MOSFET N-CH 1KV 21A TO264

Package: TO-264-3, TO-264AA

Stock6,240
IXFX21N100F
IXYS

MOSFET N-CH 1KV 21A PLUS247-3

Package: TO-247-3

Stock103,464
IXFK66N85X
IXYS

850V/66A ULTRA JUNCTION X-CLASS

Package: TO-264-3, TO-264AA

Stock7,408
IXTK120N65X2
IXYS

MOSFET N-CH 650V 120A TO-264

Package: TO-264-3, TO-264AA

Stock4,976
IXTX120N65X2
IXYS

MOSFET N-CH 650V 120A PLUS247

Package: TO-247-3

Stock4,272
IXFH170N25X3
IXYS

MOSFET N-CH 250V 170A TO247

Package: TO-247-3

Stock4,032
IXTK102N65X2
IXYS

MOSFET N-CH 650V 102A X2 TO-264

Package: TO-264-3, TO-264AA

Stock2,100
IXTX102N65X2
IXYS

MOSFET N-CH 650V 102A X2 PLUS247

Package: TO-247-3

Stock4,688
IXFT50N85XHV
IXYS

850V/50A ULTRA JUNCTION X-CLASS

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,448
IXFX100N65X2
IXYS

MOSFET N-CH 650V 100A PLUS247

Package: TO-247-3

Stock7,472
IXFT40N85XHV
IXYS

MOSFET NCH 850V 40A TO268HV

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,128
IXFH40N85X
IXYS

MOSFET NCH 850V 40A TO247

Package: TO-247-3

Stock6,360
IXFT30N85XHV
IXYS

MOSFET N-CH 850V 30A TO268-3

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,824
IXFH6N100F
IXYS

MOSFET N-CH 1KV 6A TO247

Package: TO-247-3

Stock6,592

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN120N65X2	IXYS	MOSFET N-CH 650V 108A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 54A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,776	MOSFET (Metal Oxide)	650V	108A (Tc)	10V	5.5V @ 8mA	225nC @ 10V	15500pF @ 25V	±30V	-	890W (Tc)	24 mOhm @ 54A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXFK24N100F	IXYS	MOSFET N-CH 1KV 24A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,928	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	5.5V @ 8mA	195nC @ 10V	6600pF @ 25V	±20V	-	560W (Tc)	390 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IXFX24N100F	IXYS	MOSFET N-CH 1KV 24A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,936	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	5.5V @ 8mA	195nC @ 10V	6600pF @ 25V	±20V	-	560W (Tc)	390 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFZ140N25T	IXYS	MOSFET N-CH 250V 100A DE475 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 445W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DE475 Package / Case: DE475	Package: DE475	Stock4,672	MOSFET (Metal Oxide)	250V	100A (Tc)	10V	5V @ 4mA	255nC @ 10V	19000pF @ 25V	±20V	-	445W (Tc)	17 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DE475	DE475
IXFN170N25X3	IXYS	MOSFET N-CH 250V 170A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,120	MOSFET (Metal Oxide)	250V	170A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	13500pF @ 25V	±20V	-	390W (Tc)	7.4 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN102N65X2	IXYS	MOSFET N-CH 650V 76A X2 SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,848	MOSFET (Metal Oxide)	650V	76A	10V	5V @ 250µA	152nC @ 10V	10900pF @ 25V	±30V	-	595W (Tc)	30 mOhm @ 51A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXFK21N100F	IXYS	MOSFET N-CH 1KV 21A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,240	MOSFET (Metal Oxide)	1000V	21A (Tc)	10V	5.5V @ 4mA	160nC @ 10V	5500pF @ 25V	±20V	-	500W (Tc)	500 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IXFX21N100F	IXYS	MOSFET N-CH 1KV 21A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	1000V	21A (Tc)	10V	5.5V @ 4mA	160nC @ 10V	5500pF @ 25V	±20V	-	500W (Tc)	500 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK66N85X	IXYS	850V/66A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,408	MOSFET (Metal Oxide)	850V	66A (Tc)	10V	5.5V @ 8mA	230nC @ 10V	8900pF @ 25V	±30V	-	1250W (Tc)	65 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXTK120N65X2	IXYS	MOSFET N-CH 650V 120A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,976	MOSFET (Metal Oxide)	650V	120A (Tc)	10V	4.5V @ 8mA	240nC @ 10V	13600pF @ 25V	±30V	-	1250W (Tc)	24 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTX120N65X2	IXYS	MOSFET N-CH 650V 120A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,272	MOSFET (Metal Oxide)	650V	120A (Tc)	10V	4.5V @ 8mA	240nC @ 10V	13600pF @ 25V	±30V	-	1250W (Tc)	24 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFH170N25X3	IXYS	MOSFET N-CH 250V 170A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,032	MOSFET (Metal Oxide)	250V	170A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	13500pF @ 25V	±20V	-	960W (Tc)	7.4 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXTK102N65X2	IXYS	MOSFET N-CH 650V 102A X2 TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,100	MOSFET (Metal Oxide)	650V	102A (Tc)	10V	5V @ 250µA	152nC @ 10V	10900pF @ 25V	±30V	-	1040W (Tc)	30 mOhm @ 51A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTX102N65X2	IXYS	MOSFET N-CH 650V 102A X2 PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,688	MOSFET (Metal Oxide)	650V	102A (Tc)	10V	5V @ 250µA	152nC @ 10V	10900pF @ 25V	±30V	-	1040W (Tc)	30 mOhm @ 51A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFT50N85XHV	IXYS	850V/50A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,448	MOSFET (Metal Oxide)	850V	50A (Tc)	10V	5.5V @ 4mA	152nC @ 10V	4480pF @ 25V	±30V	-	890W (Tc)	105 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFX100N65X2	IXYS	MOSFET N-CH 650V 100A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,472	MOSFET (Metal Oxide)	650V	100A (Tc)	10V	5.5V @ 4mA	180nC @ 10V	11300pF @ 25V	±30V	-	1040W (Tc)	30 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFT40N85XHV	IXYS	MOSFET NCH 850V 40A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 860W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,128	MOSFET (Metal Oxide)	850V	40A (Tc)	10V	5.5V @ 4mA	98nC @ 10V	3700pF @ 25V	±30V	-	860W (Tc)	145 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFH40N85X	IXYS	MOSFET NCH 850V 40A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 860W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,360	MOSFET (Metal Oxide)	850V	40A (Tc)	10V	5.5V @ 4mA	98nC @ 10V	3700pF @ 25V	±30V	-	860W (Tc)	145 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFT30N85XHV	IXYS	MOSFET N-CH 850V 30A TO268-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,824	MOSFET (Metal Oxide)	850V	30A (Tc)	10V	5.5V @ 2.5mA	68nC @ 10V	2460pF @ 25V	±30V	-	695W (Tc)	220 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFH6N100F	IXYS	MOSFET N-CH 1KV 6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,592	MOSFET (Metal Oxide)	1000V	6A (Tc)	10V	5.5V @ 2.5mA	54nC @ 10V	1770pF @ 25V	±20V	-	180W (Tc)	1.9 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFH30N85X	IXYS	MOSFET N-CH 850V 30A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,800	MOSFET (Metal Oxide)	850V	30A (Tc)	10V	5.5V @ 2.5mA	68nC @ 10V	2460pF @ 25V	±30V	-	695W (Tc)	220 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH16N20D2	IXYS	MOSFET N-CH 200V 16A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 208nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock82,332	MOSFET (Metal Oxide)	200V	16A (Tc)	-	-	208nC @ 5V	5500pF @ 25V	±20V	Depletion Mode	695W (Tc)	73 mOhm @ 8A, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFJ20N85X	IXYS	MOSFET N-CH 850V 9.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFJ) Package / Case: TO-247-3	Package: TO-247-3	Stock6,656	MOSFET (Metal Oxide)	850V	9.5A (Tc)	10V	5.5V @ 2.5mA	63nC @ 10V	1660pF @ 25V	±30V	-	110W (Tc)	360 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFJ)	TO-247-3
IXTH62N65X2	IXYS	MOSFET N-CH 650V 62A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,616	MOSFET (Metal Oxide)	650V	62A (Tc)	10V	4.5V @ 4mA	104nC @ 10V	5940pF @ 25V	±30V	-	780W (Tc)	52 mOhm @ 31A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFH20N85X	IXYS	850V/20A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,784	MOSFET (Metal Oxide)	850V	20A (Tc)	10V	5.5V @ 2.5mA	63nC @ 10V	1660pF @ 25V	±30V	-	540W (Tc)	330 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFH46N65X2	IXYS	MOSFET N-CH 650V 46A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 76 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,728	MOSFET (Metal Oxide)	650V	46A (Tc)	10V	5.5V @ 4mA	75nC @ 10V	4810pF @ 25V	±30V	-	660W (Tc)	76 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFQ60N25X3	IXYS	MOSFET N-CH 250V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,440	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4.5V @ 1.5mA	50nC @ 10V	3610pF @ 25V	±20V	-	320W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFH14N85X	IXYS	MOSFET N-CH 850V 14A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,204	MOSFET (Metal Oxide)	850V	14A (Tc)	10V	5.5V @ 1mA	30nC @ 10V	1043pF @ 25V	±30V	-	460W (Tc)	550 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3