Page 33 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFP80N25X3
IXYS

MOSFET N-CH 250V 80A TO220AB

Package: TO-220-3

Stock5,952
IXFP20N85X
IXYS

850V/20A ULTRA JUNCTION X-CLASS

Package: TO-220-3

Stock4,592
IXFA60N25X3
IXYS

MOSFET N-CH 250V 60A TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,632
IXFP60N25X3M
IXYS

MOSFET N-CH 250V 60A TO220AB

Package: TO-220-3

Stock5,408
IXFP60N25X3
IXYS

MOSFET N-CH 250V 60A TO220AB

Package: TO-220-3

Stock7,104
IXTQ36P15P
IXYS

MOSFET P-CH 150V 36A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,520
IXFH270N06T3
IXYS

60V/270A TRENCHT3 HIPERFET MOSFE

Package: TO-247-3

Stock5,040
IXFA14N85XHV
IXYS

MOSFET N-CH 850V 14A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,344
IXFH22N65X2
IXYS

MOSFET N-CH 650V 22A TO-247

Package: TO-247-3

Stock6,224
IXFP14N85XM
IXYS

MOSFET N-CH 8500V 14A TO220

Package: TO-220-3 Full Pack

Stock5,952
IXFP14N85X
IXYS

MOSFET N-CH 850V 14A TO220-3

Package: TO-220-3

Stock4,160
IXFH220N06T3
IXYS

60V/220A TRENCHT3 HIPERFET MOSFE

Package: TO-247-3

Stock3,872
IXTA140N12T2
IXYS

120V/140A TRENCHT2 POWER MOSFET

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,944
IXTA110N12T2
IXYS

120V/110A TRENCHT2 POWER MOSFET

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,912
IXTP140N12T2
IXYS

120V/140A TRENCHT2 POWER MOSFET

Package: TO-220-3

Stock4,848
IXFA270N06T3
IXYS

60V/270A TRENCHT3 HIPERFET MOSFE

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,264
IXFP270N06T3
IXYS

60V/270A TRENCHT3 HIPERFET MOSFE

Package: TO-220-3

Stock7,760
IXTP110N12T2
IXYS

120V/110A TRENCHT2 POWER MOSFET

Package: TO-220-3

Stock6,456
IXFP22N65X2
IXYS

MOSFET N-CH 650V 22A TO-220

Package: TO-220-3

Stock7,392
IXFA220N06T3
IXYS

60V/220A TRENCHT3 HIPERFET MOSFE

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,704

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFP80N25X3	IXYS	MOSFET N-CH 250V 80A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock5,952	MOSFET (Metal Oxide)	250V	80A (Tc)	10V	4.5V @ 1.5mA	83nC @ 10V	5430pF @ 25V	±20V	-	390W (Tc)	16 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IXFP20N85X	IXYS	850V/20A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,592	MOSFET (Metal Oxide)	850V	20A (Tc)	10V	5.5V @ 2.5mA	63nC @ 10V	1660pF @ 25V	±30V	-	540W (Tc)	330 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFA60N25X3	IXYS	MOSFET N-CH 250V 60A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,632	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4.5V @ 1.5mA	50nC @ 10V	3610pF @ 25V	±20V	-	320W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFP60N25X3M	IXYS	MOSFET N-CH 250V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock5,408	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4.5V @ 1.5mA	50nC @ 10V	3610pF @ 25V	±20V	-	36W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IXFP60N25X3	IXYS	MOSFET N-CH 250V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock7,104	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4.5V @ 1.5mA	50nC @ 10V	3610pF @ 25V	±20V	-	320W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IXTQ36P15P	IXYS	MOSFET P-CH 150V 36A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,520	MOSFET (Metal Oxide)	150V	36A (Tc)	10V	4.5V @ 250µA	55nC @ 10V	3100pF @ 25V	±20V	-	300W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFH270N06T3	IXYS	60V/270A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,040	MOSFET (Metal Oxide)	60V	270A (Tc)	10V	4V @ 250µA	200nC @ 10V	12600pF @ 25V	±20V	-	480W (Tc)	3.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IXFA14N85XHV	IXYS	MOSFET N-CH 850V 14A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,344	MOSFET (Metal Oxide)	850V	14A (Tc)	10V	5.5V @ 1mA	30nC @ 10V	1043pF @ 25V	±30V	-	460W (Tc)	550 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFH22N65X2	IXYS	MOSFET N-CH 650V 22A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,224	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5.5V @ 1.5mA	38nC @ 10V	2310pF @ 25V	±30V	-	390W (Tc)	160 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFP14N85XM	IXYS	MOSFET N-CH 8500V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,952	MOSFET (Metal Oxide)	850V	14A (Tc)	10V	5.5V @ 1mA	30nC @ 10V	1043pF @ 25V	±30V	-	38W (Tc)	550 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3 Full Pack
IXFP14N85X	IXYS	MOSFET N-CH 850V 14A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock4,160	MOSFET (Metal Oxide)	850V	14A (Tc)	10V	5.5V @ 1mA	30nC @ 10V	1043pF @ 25V	±30V	-	460W (Tc)	550 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IXFH220N06T3	IXYS	60V/220A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 440W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,872	MOSFET (Metal Oxide)	60V	220A (Tc)	10V	4V @ 250µA	136nC @ 10V	8500pF @ 25V	±20V	-	440W (Tc)	4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IXTA140N12T2	IXYS	120V/140A TRENCHT2 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 174nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 577W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,944	MOSFET (Metal Oxide)	120V	140A (Tc)	10V	4.5V @ 250µA	174nC @ 10V	9700pF @ 25V	±20V	-	577W (Tc)	10 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA110N12T2	IXYS	120V/110A TRENCHT2 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,912	MOSFET (Metal Oxide)	120V	110A (Tc)	10V	4.5V @ 250µA	120nC @ 10V	6570pF @ 25V	±20V	-	517W (Tc)	14 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP140N12T2	IXYS	120V/140A TRENCHT2 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 174nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 577W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,848	MOSFET (Metal Oxide)	120V	140A (Tc)	10V	4.5V @ 250µA	174nC @ 10V	9700pF @ 25V	±20V	-	577W (Tc)	10 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFA270N06T3	IXYS	60V/270A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,264	MOSFET (Metal Oxide)	60V	270A (Tc)	10V	4V @ 250µA	200nC @ 10V	12600pF @ 25V	±20V	-	480W (Tc)	3.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFP270N06T3	IXYS	60V/270A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,760	MOSFET (Metal Oxide)	60V	270A (Tc)	10V	4V @ 250µA	200nC @ 10V	12600pF @ 25V	±20V	-	480W (Tc)	3.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP110N12T2	IXYS	120V/110A TRENCHT2 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,456	MOSFET (Metal Oxide)	120V	110A (Tc)	10V	4.5V @ 250µA	120nC @ 10V	6570pF @ 25V	±20V	-	517W (Tc)	14 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFP22N65X2	IXYS	MOSFET N-CH 650V 22A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5.5V @ 1.5mA	38nC @ 10V	2310pF @ 25V	±30V	-	390W (Tc)	160 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFA220N06T3	IXYS	60V/220A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 440W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,704	MOSFET (Metal Oxide)	60V	220A (Tc)	10V	4V @ 250µA	136nC @ 10V	8500pF @ 25V	±20V	-	440W (Tc)	4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA270N04T4-7	IXYS	40V/270A TRENCH T POWER MOSFET, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9140pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,136	MOSFET (Metal Oxide)	40V	270A (Tc)	10V	4V @ 250µA	182nC @ 10V	9140pF @ 25V	±15V	-	375W (Tc)	2.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2Pak (6 Leads + Tab)
IXFP220N06T3	IXYS	60V/220A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 440W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,840	MOSFET (Metal Oxide)	60V	220A (Tc)	10V	4V @ 250µA	136nC @ 10V	8500pF @ 25V	±20V	-	440W (Tc)	4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFY4N85X	IXYS	MOSFET N-CH 850V 3.5A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (IXFY) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,160	MOSFET (Metal Oxide)	850V	3.5A (Tc)	10V	5.5V @ 250µA	7nC @ 10V	247pF @ 25V	±30V	-	150W (Tc)	2.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (IXFY)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA12N65X2	IXYS	MOSFET N-CH 650V 12A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,424	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	17nC @ 10V	1100pF @ 25V	±30V	-	180W (Tc)	300 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab) Variant
IXFA4N85X	IXYS	MOSFET N-CH 850V 3.5A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,584	MOSFET (Metal Oxide)	850V	3.5A (Tc)	10V	5.5V @ 250µA	7nC @ 10V	247pF @ 25V	±30V	-	150W (Tc)	2.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP8N70X2	IXYS	MOSFET N-CHANNEL 700V 8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,912	MOSFET (Metal Oxide)	700V	8A (Tc)	10V	5V @ 250µA	12nC @ 10V	800pF @ 10V	±30V	-	150W (Tc)	500 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFP4N85X	IXYS	MOSFET N-CH 850V 3.5A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock7,184	MOSFET (Metal Oxide)	850V	3.5A (Tc)	10V	5.5V @ 250µA	7nC @ 10V	247pF @ 25V	±30V	-	150W (Tc)	2.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IXFA8N85XHV	IXYS	MOSFET N-CH 850V 8A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	850V	8A (Tc)	10V	5.5V @ 250µA	17nC @ 10V	654pF @ 25V	±30V	-	200W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB