Page 37 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFN210N30P3
IXYS

MOSFET N-CH 300V 192A SOT-227

Package: SOT-227-4, miniBLOC

Stock4,864
IXTH1N450HV
IXYS

2500V TO 4500V VERY HI VOLT PWR

Package: TO-247-3 Variant

Stock6,144
IXTH2N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-247-3

Stock4,368
IXFR32N100Q3
IXYS

MOSFET N-CH 1000V 23A ISOPLUS247

Package: TO-247-3

Stock6,688
IXTT1N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,376
IXFR64N60Q3
IXYS

MOSFET N-CH 600V 42A ISOPLUS247

Package: TO-247-3

Stock6,144
IXTT4N150HV
IXYS

MOSFET N-CH 1.5KV 4A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,400
IXFX64N60Q3
IXYS

MOSFET N-CH 600V 64A PLUS247

Package: TO-247-3

Stock5,728
IXTX110N20L2
IXYS

MOSFET N-CH 200V 110A PLUS247

Package: TO-247-3

Stock4,512
IXTH1N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-247-3 Variant

Stock5,104
IXFL210N30P3
IXYS

MOSFET N-CH 300V 108A TO-264

Package: TO-264-3, TO-264AA

Stock6,544
IXFR32N80Q3
IXYS

MOSFET N-CH 800V 24A ISOPLUS247

Package: TO-247-3

Stock7,776
IXFK80N50Q3
IXYS

MOSFET N-CH 500V 80A TO-264

Package: TO-264-3, TO-264AA

Stock6,048
IXFX80N50Q3
IXYS

MOSFET N-CH 500V 80A PLUS247

Package: TO-247-3

Stock6,592
IXTH3N200P3HV
IXYS

MOSFET N-CH 2000V 3A TO-247

Package: TO-247-3

Stock6,036
IXFX32N80Q3
IXYS

MOSFET N-CH 800V 32A PLUS247

Package: TO-247-3

Stock6,024
IXFR64N50Q3
IXYS

MOSFET N-CH 500V 45A ISOPLUS247

Package: TO-247-3

Stock5,920
IXFL132N50P3
IXYS

MOSFET N-CH 500V 63A ISOPLUS264

Package: ISOPLUS264?

Stock4,560
IXFN80N60P3
IXYS

MOSFET N-CH 600V 66A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,568
IXFK32N80Q3
IXYS

MOSFET N-CH 800V 32A TO-264

Package: TO-264-3, TO-264AA

Stock6,048

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN210N30P3	IXYS	MOSFET N-CH 300V 192A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1500W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,864	MOSFET (Metal Oxide)	300V	192A (Tc)	10V	5V @ 8mA	268nC @ 10V	16200pF @ 25V	±20V	-	1500W (Tc)	14.5 mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTH1N450HV	IXYS	2500V TO 4500V VERY HI VOLT PWR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,144	MOSFET (Metal Oxide)	4500V	1A (Tc)	10V	6V @ 250µA	46nC @ 10V	1700pF @ 25V	±20V	-	520W (Tc)	80 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
IXTH2N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 21 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3	Package: TO-247-3	Stock4,368	MOSFET (Metal Oxide)	3000V	2A (Tc)	10V	5V @ 250µA	73nC @ 10V	1890pF @ 25V	±20V	-	520W (Tc)	21 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3
IXFR32N100Q3	IXYS	MOSFET N-CH 1000V 23A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock6,688	MOSFET (Metal Oxide)	1000V	23A (Tc)	10V	6.5V @ 8mA	195nC @ 10V	9940pF @ 25V	±30V	-	570W (Tc)	350 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXTT1N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,376	MOSFET (Metal Oxide)	3000V	1A (Tc)	10V	4V @ 250µA	30.6nC @ 10V	895pF @ 25V	±20V	-	195W (Tc)	50 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFR64N60Q3	IXYS	MOSFET N-CH 600V 42A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock6,144	MOSFET (Metal Oxide)	600V	42A (Tc)	10V	6.5V @ 4mA	190nC @ 10V	9930pF @ 25V	±30V	-	568W (Tc)	104 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXTT4N150HV	IXYS	MOSFET N-CH 1.5KV 4A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1576pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,400	MOSFET (Metal Oxide)	1500V	4A (Tc)	10V	5V @ 250µA	44.5nC @ 10V	1576pF @ 25V	±30V	-	280W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFX64N60Q3	IXYS	MOSFET N-CH 600V 64A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,728	MOSFET (Metal Oxide)	600V	64A (Tc)	10V	6.5V @ 4mA	190nC @ 10V	9930pF @ 25V	±30V	-	1250W (Tc)	95 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTX110N20L2	IXYS	MOSFET N-CH 200V 110A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,512	MOSFET (Metal Oxide)	200V	110A (Tc)	10V	4.5V @ 3mA	500nC @ 10V	23000pF @ 25V	±20V	-	960W (Tc)	24 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTH1N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock5,104	MOSFET (Metal Oxide)	3000V	1A (Tc)	10V	4V @ 250µA	30.6nC @ 10V	895pF @ 25V	±20V	-	195W (Tc)	50 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
IXFL210N30P3	IXYS	MOSFET N-CH 300V 108A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,544	MOSFET (Metal Oxide)	300V	108A (Tc)	10V	5V @ 8mA	268nC @ 10V	16200pF @ 25V	±20V	-	520W (Tc)	16 mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	TO-264-3, TO-264AA
IXFR32N80Q3	IXYS	MOSFET N-CH 800V 24A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock7,776	MOSFET (Metal Oxide)	800V	24A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	6940pF @ 25V	±30V	-	500W (Tc)	300 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXFK80N50Q3	IXYS	MOSFET N-CH 500V 80A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,048	MOSFET (Metal Oxide)	500V	80A (Tc)	10V	6.5V @ 8mA	200nC @ 10V	10000pF @ 25V	±30V	-	1250W (Tc)	65 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFX80N50Q3	IXYS	MOSFET N-CH 500V 80A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,592	MOSFET (Metal Oxide)	500V	80A (Tc)	10V	6.5V @ 8mA	200nC @ 10V	10000pF @ 25V	±30V	-	1250W (Tc)	65 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTH3N200P3HV	IXYS	MOSFET N-CH 2000V 3A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,036	MOSFET (Metal Oxide)	2000V	3A (Tc)	10V	5V @ 250µA	70nC @ 10V	1860pF @ 25V	±20V	-	520W (Tc)	8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFX32N80Q3	IXYS	MOSFET N-CH 800V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,024	MOSFET (Metal Oxide)	800V	32A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	6940pF @ 25V	±30V	-	1000W (Tc)	270 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFR64N50Q3	IXYS	MOSFET N-CH 500V 45A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock5,920	MOSFET (Metal Oxide)	500V	45A (Tc)	10V	6.5V @ 4mA	145nC @ 10V	6950pF @ 25V	±30V	-	500W (Tc)	95 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXFL132N50P3	IXYS	MOSFET N-CH 500V 63A ISOPLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock4,560	MOSFET (Metal Oxide)	500V	63A (Tc)	10V	5V @ 8mA	250nC @ 10V	18600pF @ 25V	±30V	-	520W (Tc)	43 mOhm @ 66A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUS264?
IXFN80N60P3	IXYS	MOSFET N-CH 600V 66A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,568	MOSFET (Metal Oxide)	600V	66A	10V	5V @ 8mA	190nC @ 10V	13100pF @ 25V	±30V	-	960W (Tc)	70 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFK32N80Q3	IXYS	MOSFET N-CH 800V 32A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,048	MOSFET (Metal Oxide)	800V	32A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	6940pF @ 25V	±30V	-	1000W (Tc)	270 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK48N60Q3	IXYS	MOSFET N-CH 600V 48A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,096	MOSFET (Metal Oxide)	600V	48A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	7020pF @ 25V	±30V	-	1000W (Tc)	140 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK64N50Q3	IXYS	MOSFET N-CH 500V 64A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,504	MOSFET (Metal Oxide)	500V	64A (Tc)	10V	6.5V @ 4mA	145nC @ 10V	6950pF @ 25V	±30V	-	1000W (Tc)	85 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFB210N30P3	IXYS	MOSFET N-CH 300V 210A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1890W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,880	MOSFET (Metal Oxide)	300V	210A (Tc)	10V	5V @ 8mA	268nC @ 10V	16200pF @ 25V	±20V	-	1890W (Tc)	14.5 mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS264?	TO-264-3, TO-264AA
IXFX64N50Q3	IXYS	MOSFET N-CH 500V 64A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,416	MOSFET (Metal Oxide)	500V	64A (Tc)	10V	6.5V @ 4mA	145nC @ 10V	6950pF @ 25V	±30V	-	1000W (Tc)	85 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX24N100Q3	IXYS	MOSFET N-CH 1000V 24A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,632	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	7200pF @ 25V	±30V	-	1000W (Tc)	440 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX48N60Q3	IXYS	MOSFET N-CH 600V 48A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,112	MOSFET (Metal Oxide)	600V	48A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	7020pF @ 25V	±30V	-	1000W (Tc)	140 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFB120N50P2	IXYS	MOSFET N-CH 500V 120A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1890W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,096	MOSFET (Metal Oxide)	500V	120A (Tc)	10V	5V @ 8mA	300nC @ 10V	19000pF @ 25V	±30V	-	1890W (Tc)	43 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFN94N50P2	IXYS	500V POLAR2 HIPERFETS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,744	MOSFET (Metal Oxide)	500V	68A (Tc)	10V	5V @ 8mA	220nC @ 10V	13700pF @ 25V	±30V	-	780W (Tc)	55 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC