Page 88 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFN100N10S1
IXYS

MOSFET N-CH 100V 100A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,440
IXFK48N55
IXYS

MOSFET N-CH 550V 48A TO-264AA

Package: TO-264-3, TO-264AA

Stock5,424
IXFJ40N30
IXYS

MOSFET N-CH 300V 40A TO-220

Package: TO-220-3, Short Tab

Stock7,312
IXFJ32N50Q
IXYS

MOSFET N-CH 500V 32A TO-220

Package: TO-220-3, Short Tab

Stock6,000
IXFH80N10
IXYS

MOSFET N-CH 100V 80A TO-247

Package: TO-247-3

Stock3,312
IXFH80N085
IXYS

MOSFET N-CH 85V 80A TO-247

Package: TO-247-3

Stock2,192
IXFH80N08
IXYS

MOSFET N-CH 80V 80A TO-247

Package: TO-247-3

Stock5,968
IXFH80N06
IXYS

MOSFET N-CH 60V 80A TO-247

Package: TO-247-3

Stock6,240
IXFH70N15
IXYS

MOSFET N-CH 150V 70A TO-247

Package: TO-247-3

Stock4,288
IXFH150N17T
IXYS

MOSFET N-CH 175V 150A TO-247

Package: TO-247-3

Stock3,840
IXFH14N100
IXYS

MOSFET N-CH 1000V 14A TO-247

Package: TO-247-3

Stock390,000
IXFH12N100F
IXYS

MOSFET N-CH 1000V 12A TO-247AD

Package: TO-3P-3 Full Pack

Stock8,904
IXFC80N10
IXYS

MOSFET N-CH 100V 80A ISOPLUS220

Package: ISOPLUS220?

Stock7,184
IXFC80N085
IXYS

MOSFET N-CH 85V 80A ISOPLUS220

Package: ISOPLUS220?

Stock7,104
IXFC80N08
IXYS

MOSFET N-CH 80V 80A ISOPLUS220

Package: ISOPLUS220?

Stock5,104
IXFC60N20
IXYS

MOSFET N-CH 200V 60A ISOPLUS220

Package: ISOPLUS220?

Stock5,408
IXFC40N30Q
IXYS

MOSFET N-CH 300V ISOPLUS220

Package: ISOPLUS220?

Stock5,760
IXFC26N50
IXYS

MOSFET N-CH 500V 23A ISOPLUS220

Package: ISOPLUS220?

Stock6,832
IXFC24N50
IXYS

MOSFET N-CH 500V 21A ISOPLUS220

Package: ISOPLUS220?

Stock5,456
IXFC15N80Q
IXYS

MOSFET N-CH 800V 13A ISOPLUS220

Package: ISOPLUS220?

Stock6,336

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN100N10S1	IXYS	MOSFET N-CH 100V 100A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,440	MOSFET (Metal Oxide)	100V	100A	10V	4V @ 4mA	180nC @ 10V	4500pF @ 25V	±20V	-	360W (Tc)	15 mOhm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFK48N55	IXYS	MOSFET N-CH 550V 48A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,424	MOSFET (Metal Oxide)	550V	48A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	8900pF @ 25V	±20V	-	560W (Tc)	110 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFJ40N30	IXYS	MOSFET N-CH 300V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-268 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock7,312	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	200nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	80 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-268	TO-220-3, Short Tab
IXFJ32N50Q	IXYS	MOSFET N-CH 500V 32A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-268 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock6,000	MOSFET (Metal Oxide)	500V	32A (Tc)	10V	4V @ 4mA	153nC @ 10V	3950pF @ 25V	±20V	-	360W (Tc)	150 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-268	TO-220-3, Short Tab
IXFH80N10	IXYS	MOSFET N-CH 100V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,312	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	12.5 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH80N085	IXYS	MOSFET N-CH 85V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,192	MOSFET (Metal Oxide)	85V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	9 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH80N08	IXYS	MOSFET N-CH 80V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,968	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	9 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH80N06	IXYS	MOSFET N-CH 60V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,240	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	-	-	-	±20V	-	-	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH70N15	IXYS	MOSFET N-CH 150V 70A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,288	MOSFET (Metal Oxide)	150V	70A (Tc)	10V	4V @ 4mA	180nC @ 10V	3600pF @ 25V	±20V	-	300W (Tc)	28 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH150N17T	IXYS	MOSFET N-CH 175V 150A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 175V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,840	MOSFET (Metal Oxide)	175V	150A (Tc)	10V	5V @ 3mA	155nC @ 10V	9800pF @ 25V	-	-	830W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH14N100	IXYS	MOSFET N-CH 1000V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	4.5V @ 4mA	220nC @ 10V	4500pF @ 25V	±20V	-	360W (Tc)	750 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH12N100F	IXYS	MOSFET N-CH 1000V 12A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock8,904	MOSFET (Metal Oxide)	1000V	12A (Tc)	10V	5.5V @ 4mA	77nC @ 10V	2700pF @ 25V	±20V	-	300W (Tc)	1.05 Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-3P-3 Full Pack
IXFC80N10	IXYS	MOSFET N-CH 100V 80A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,184	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	230W (Tc)	12.5 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC80N085	IXYS	MOSFET N-CH 85V 80A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,104	MOSFET (Metal Oxide)	85V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	230W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC80N08	IXYS	MOSFET N-CH 80V 80A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,104	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	230W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC60N20	IXYS	MOSFET N-CH 200V 60A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,408	MOSFET (Metal Oxide)	200V	60A (Tc)	10V	4V @ 4mA	155nC @ 10V	5200pF @ 25V	±20V	-	230W (Tc)	33 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC40N30Q	IXYS	MOSFET N-CH 300V ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,760	MOSFET (Metal Oxide)	300V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC26N50	IXYS	MOSFET N-CH 500V 23A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock6,832	MOSFET (Metal Oxide)	500V	23A (Tc)	10V	4V @ 4mA	135nC @ 10V	4200pF @ 25V	±20V	-	230W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC24N50	IXYS	MOSFET N-CH 500V 21A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,456	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 4mA	135nC @ 10V	4200pF @ 25V	±20V	-	230W (Tc)	230 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC15N80Q	IXYS	MOSFET N-CH 800V 13A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock6,336	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	4300pF @ 25V	±20V	-	230W (Tc)	650 mOhm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFC13N50	IXYS	MOSFET N-CH 500V 12A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock2,912	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 2.5mA	120nC @ 10V	2800pF @ 25V	±20V	-	140W (Tc)	400 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IRFP470	IXYS	MOSFET N-CH 500V 24A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock2,912	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4V @ 250µA	190nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	230 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-3P-3 Full Pack
IRFP250	IXYS	MOSFET N-CH 200V 30A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock137,112	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	140nC @ 10V	2970pF @ 25V	±20V	-	190W (Tc)	85 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
IXTY12N06T	IXYS	MOSFET N-CH 60V 12A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,576	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 25µA	3.4nC @ 10V	256pF @ 25V	±20V	-	33W (Tc)	85 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTQ102N15T	IXYS	MOSFET N-CH 150V 102A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464	MOSFET (Metal Oxide)	150V	102A (Tc)	10V	5V @ 1mA	87nC @ 10V	5220pF @ 25V	±20V	-	455W (Tc)	18 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTP90N075T2	IXYS	MOSFET N-CH 75V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,904	MOSFET (Metal Oxide)	75V	90A (Tc)	10V	4V @ 250µA	54nC @ 10V	3290pF @ 25V	±20V	-	180W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP102N15T	IXYS	MOSFET N-CH 150V 102A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,200	MOSFET (Metal Oxide)	150V	102A (Tc)	10V	5V @ 1mA	87nC @ 10V	5220pF @ 25V	±20V	-	455W (Tc)	18 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTC36P15P	IXYS	MOSFET P-CH 150V 22A ISOPLUS220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,744	MOSFET (Metal Oxide)	150V	22A (Tc)	10V	5V @ 250µA	55nC @ 10V	2950pF @ 25V	±20V	-	150W (Tc)	120 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?