Page 90 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFD28N50Q-72
IXYS

MOSFET N-CH

Package: -

Stock4,416
IXFD26N60Q-8XQ
IXYS

MOSFET N-CH

Package: -

Stock3,168
IXFD26N50Q-72
IXYS

MOSFET N-CH

Package: Die

Stock6,160
IXFD24N50Q-72
IXYS

MOSFET N-CH

Package: -

Stock6,704
IXFD23N60Q-72
IXYS

MOSFET N-CH

Package: Die

Stock7,632
IXFD15N100-8X
IXYS

MOSFET N-CH

Package: -

Stock4,912
IXFD14N100-8X
IXYS

MOSFET N-CH

Package: Die

Stock4,960
IXFC24N50Q
IXYS

MOSFET N-CH ISOPLUS220

Package: ISOPLUS220?

Stock3,600
IXFK44N50F
IXYS

MOSFET N-CH 500V 44A TO264

Package: TO-264-3, TO-264AA

Stock6,272
IXTT12N140
IXYS

MOSFET N-CH 1400V 12A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,392
IXTY12N06TTRL
IXYS

MOSFET N-CH 60V 12A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,808
IXTA02N250
IXYS

MOSFET N-CH 2500V 0.2A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,408
IXTF03N400
IXYS

MOSFET N-CH 4000V 300MA I4PAK

Package: i4-Pac?-5 (3 leads)

Stock3,392
IXTA02N450HV
IXYS

MOSFET N-CH 4500V 0.2A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,664
IXTF1N400
IXYS

MOSFET N-CH 4000V 1A ISOPLUS I4

Package: i4-Pac?-5 (3 leads)

Stock6,384
IXFX74N50P2
IXYS

MOSFET N-CH 500V 74A PLUS247

Package: TO-247-3

Stock3,648
IXTV03N400S
IXYS

MOSFET N-CH 4000V .3A PLUS 220

Package: PLUS-220SMD

Stock2,992
IXFV18N90PS
IXYS

MOSFET N-CH 900V 18A PLUS220SMD

Package: PLUS-220SMD

Stock6,672
IXFV12N90PS
IXYS

MOSFET N-CH 900V 12A PLUS220SMD

Package: PLUS-220SMD

Stock3,376
IXFV18N90P
IXYS

MOSFET N-CH 900V 18A PLUS220

Package: TO-220-3, Short Tab

Stock3,952

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFD28N50Q-72	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,416	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFD26N60Q-8XQ	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,168	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFD26N50Q-72	IXYS	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: Die Package / Case: Die	Package: Die	Stock6,160	MOSFET (Metal Oxide)	500V	-	-	-	-	-	-	-	-	-	-	-	Die	Die
IXFD24N50Q-72	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,704	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFD23N60Q-72	IXYS	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: Die Package / Case: Die	Package: Die	Stock7,632	MOSFET (Metal Oxide)	600V	-	-	-	-	-	-	-	-	-	-	-	Die	Die
IXFD15N100-8X	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,912	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFD14N100-8X	IXYS	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: Die Package / Case: Die	Package: Die	Stock4,960	MOSFET (Metal Oxide)	1000V	-	-	-	-	-	-	-	-	-	-	-	Die	Die
IXFC24N50Q	IXYS	MOSFET N-CH ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock3,600	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 4mA	135nC @ 10V	4200pF @ 25V	±20V	-	230W (Tc)	230 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXFK44N50F	IXYS	MOSFET N-CH 500V 44A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,272	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	5.5V @ 4mA	156nC @ 10V	5500pF @ 25V	±20V	-	500W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IXTT12N140	IXYS	MOSFET N-CH 1400V 12A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1400V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,392	MOSFET (Metal Oxide)	1400V	12A (Tc)	10V	4.5V @ 250µA	106nC @ 10V	3720pF @ 25V	±20V	-	890W (Tc)	2 Ohm @ 6A, 10V	-	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTY12N06TTRL	IXYS	MOSFET N-CH 60V 12A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,808	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 25µA	3.4nC @ 10V	256pF @ 25V	±20V	-	33W (Tc)	85 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA02N250	IXYS	MOSFET N-CH 2500V 0.2A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,408	MOSFET (Metal Oxide)	2500V	200mA (Tc)	10V	4.5V @ 250µA	7.4nC @ 10V	116pF @ 25V	±20V	-	83W (Tc)	450 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTF03N400	IXYS	MOSFET N-CH 4000V 300MA I4PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4000V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 300 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5 (3 leads)	Package: i4-Pac?-5 (3 leads)	Stock3,392	MOSFET (Metal Oxide)	4000V	300mA (Tc)	10V	4V @ 250µA	16.3nC @ 10V	435pF @ 25V	±20V	-	70W (Tc)	300 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5 (3 leads)
IXTA02N450HV	IXYS	MOSFET N-CH 4500V 0.2A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 750 Ohm @ 10mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,664	MOSFET (Metal Oxide)	4500V	200mA (Tc)	10V	6.5V @ 250µA	10.4nC @ 10V	256pF @ 25V	±20V	-	113W (Tc)	750 Ohm @ 10mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTF1N400	IXYS	MOSFET N-CH 4000V 1A ISOPLUS I4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 60 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5 (3 leads)	Package: i4-Pac?-5 (3 leads)	Stock6,384	MOSFET (Metal Oxide)	4000V	1A (Tc)	10V	4V @ 250µA	78nC @ 10V	2530pF @ 25V	±20V	-	160W (Tc)	60 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5 (3 leads)
IXFX74N50P2	IXYS	MOSFET N-CH 500V 74A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1400W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,648	MOSFET (Metal Oxide)	500V	74A (Tc)	10V	5V @ 4mA	165nC @ 10V	9900pF @ 25V	±30V	-	1400W (Tc)	77 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTV03N400S	IXYS	MOSFET N-CH 4000V .3A PLUS 220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4000V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 290 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock2,992	MOSFET (Metal Oxide)	4000V	300mA (Tc)	10V	4V @ 250µA	16.3nC @ 10V	435pF @ 25V	±20V	-	130W (Tc)	290 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXFV18N90PS	IXYS	MOSFET N-CH 900V 18A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock6,672	MOSFET (Metal Oxide)	900V	18A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5230pF @ 25V	±30V	-	540W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXFV12N90PS	IXYS	MOSFET N-CH 900V 12A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock3,376	MOSFET (Metal Oxide)	900V	12A (Tc)	10V	6.5V @ 1mA	56nC @ 10V	3080pF @ 25V	±30V	-	380W (Tc)	900 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXFV18N90P	IXYS	MOSFET N-CH 900V 18A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock3,952	MOSFET (Metal Oxide)	900V	18A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5230pF @ 25V	±30V	-	540W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXFV12N90P	IXYS	MOSFET N-CH 900V 12A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock3,264	MOSFET (Metal Oxide)	900V	12A (Tc)	10V	6.5V @ 1mA	56nC @ 10V	3080pF @ 25V	±30V	-	380W (Tc)	900 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXFN52N90P	IXYS	MOSFET N-CH 900V 43A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 43A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,376	MOSFET (Metal Oxide)	900V	43A	10V	6.5V @ 1mA	308nC @ 10V	19000pF @ 25V	±30V	-	890W (Tc)	160 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTV02N250S	IXYS	MOSFET N-CH 2500V .2A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock2,192	MOSFET (Metal Oxide)	2500V	200mA (Tc)	10V	4.5V @ 250µA	7.4nC @ 10V	116pF @ 25V	±20V	-	83W (Tc)	450 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXTC62N15P	IXYS	MOSFET N-CH ISOPLUS-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock3,648	MOSFET (Metal Oxide)	150V	36A (Tc)	10V	5V @ 250µA	70nC @ 10V	2250pF @ 25V	±20V	-	150W (Tc)	45 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IRFP264	IXYS	MOSFET N-CH 250V 38A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock3,744	MOSFET (Metal Oxide)	250V	38A (Tc)	10V	4V @ 250µA	210nC @ 10V	4800pF @ 25V	±20V	-	280W (Tc)	75 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
IRFP260	IXYS	MOSFET N-CH 200V 46A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock6,000	MOSFET (Metal Oxide)	200V	46A (Tc)	10V	4V @ 250µA	230nC @ 10V	3900pF @ 25V	±20V	-	280W (Tc)	55 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
IXFX260N17T	IXYS	MOSFET N-CH 170V 260A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1670W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,328	MOSFET (Metal Oxide)	170V	260A (Tc)	10V	5V @ 8mA	400nC @ 10V	24000pF @ 25V	±20V	-	1670W (Tc)	6.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK260N17T	IXYS	MOSFET N-CH 170V 260A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1670W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,160	MOSFET (Metal Oxide)	170V	260A (Tc)	10V	5V @ 8mA	400nC @ 10V	24000pF @ 25V	±20V	-	1670W (Tc)	6.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA