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Microchip Technology |
MOSFET N-CH 800V 13A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
MOSFET N-CH 200V 97A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 97A (Tc) | - | 4V @ 2.5mA | 435 nC @ 10 V | 10200 pF @ 25 V | - | - | - | 22mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 800V 44A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 44A (Tc) | - | 4V @ 5mA | 285 nC @ 10 V | 17650 pF @ 25 V | - | - | - | 150mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 600V 49A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 110mOhm @ 24.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 49A (Tc) | - | 4V @ 2.5mA | 450 nC @ 10 V | 8900 pF @ 25 V | - | - | - | 110mOhm @ 24.5A, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microchip Technology |
MOSFET N-CH 500V 27A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 27A (Tc) | - | 5V @ 1mA | 58 nC @ 10 V | 2596 pF @ 25 V | - | - | - | 180mOhm @ 13.5A, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 800V 15A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 15A (Tc) | - | 5V @ 1mA | 75 nC @ 10 V | 2035 pF @ 25 V | - | - | - | 520mOhm @ 7.5A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
SICFET N-CH 1.2KV 173A SOT227
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 745W (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 2.8V @ 2mA | 464 nC @ 20 V | 6040 pF @ 1000 V | +25V, -10V | - | 745W (Tc) | 16mOhm @ 80A, 20V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microchip Technology |
SICFET N-CH 1.2KV 173A SOT227
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 745W (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 2.8V @ 2mA | 464 nC @ 20 V | 6040 pF @ 1000 V | +25V, -10V | - | 745W (Tc) | 16mOhm @ 80A, 20V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microchip Technology |
TRANS SJT 1700V D3PAK
- FET Type: -
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock1,548 |
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SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
SICFET N-CH 1700V 7A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock750 |
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SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | 184 pF @ 1360 V | +23V, -10V | - | 68W (Tc) | 940mOhm @ 2.5A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 800V 13A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 4V @ 1mA | 225 nC @ 10 V | 3700 pF @ 25 V | - | - | - | 650mOhm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 600V 54A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 5V @ 2.5mA | 150 nC @ 10 V | 6710 pF @ 25 V | - | - | - | 100mOhm @ 27A, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microchip Technology |
RH MOSFET 150V U3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U3 (SMD-0.5)
- Package / Case: 3-SMD, No Lead
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 19A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | 2140 pF @ 25 V | ±20V | - | 75W (Tc) | 88mOhm @ 12A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | U3 (SMD-0.5) | 3-SMD, No Lead |
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Microchip Technology |
MOSFET N-CH 1000V 25A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1000 V | 25A (Tc) | - | 5V @ 2.5mA | 186 nC @ 10 V | 5185 pF @ 25 V | - | - | 520W (Tc) | 370mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 100V 75A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
Stock111 |
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MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 4V @ 1mA | 300 nC @ 10 V | 6120 pF @ 25 V | - | - | - | 19mOhm @ 500mA, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
SICFET N-CH 1.2KV 55A SOT227
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Stock129 |
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SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 2.7V @ 1mA | 137 nC @ 20 V | 1990 pF @ 1000 V | +25V, -10V | - | 245W (Tc) | 50mOhm @ 40A, 20V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microchip Technology |
SICFET N-CH 1.2KV 55A SOT227
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Stock51 |
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SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 2.7V @ 1mA | 137 nC @ 20 V | 1990 pF @ 1000 V | +25V, -10V | - | 245W (Tc) | 50mOhm @ 40A, 20V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microchip Technology |
SICFET N-CH 700V 37A D3PAK
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock141 |
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SiCFET (Silicon Carbide) | 700 V | 37A (Tc) | 20V | 2.4V @ 1mA (Typ) | 56 nC @ 20 V | 1175 pF @ 700 V | +23V, -10V | - | 130W (Tc) | 75mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
SICFET N-CH 700V 39A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock33 |
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SiCFET (Silicon Carbide) | 700 V | 39A (Tc) | 20V | 2.4V @ 1mA | 56 nC @ 20 V | 1175 pF @ 700 V | +23V, -10V | - | 143W (Tc) | 75mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 1000V 21A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 4V @ 2.5mA | 500 nC @ 10 V | 7900 pF @ 25 V | - | - | - | 500mOhm @ 500mA, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microchip Technology |
PM-MOSFET-SIC-SBD-BL1
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 310W
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: -
- Package / Case: Module
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Package: - |
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SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 2.8V @ 1mA | 232 nC @ 20 V | 3020 pF @ 1000 V | +25V, -10V | - | 310W | 31mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | - | Module |
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Microchip Technology |
MOSFET N-CH 1000V 18A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 5V @ 1mA | 150 nC @ 10 V | 4845 pF @ 25 V | ±30V | - | 625W (Tc) | 700mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 600V 24A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 24A (Tc) | - | 5V @ 1mA | 65 nC @ 10 V | 2910 pF @ 25 V | - | - | - | 250mOhm @ 12A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 800V 33A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 220mOhm @ 16.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 33A (Tc) | - | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | - | - | - | 220mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 800V 38A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | - | - | - | 220mOhm @ 19A, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microchip Technology |
MOSFET N-CH 600V 17A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 5V @ 1mA | 43 nC @ 10 V | 1850 pF @ 25 V | - | - | - | 380mOhm @ 8.5A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
RH MOSFET 250V U3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U3 (SMD-0.5)
- Package / Case: 3-SMD, No Lead
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MOSFET (Metal Oxide) | 250 V | 12.4A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | 1980 pF @ 25 V | ±20V | - | 75W (Tc) | 210mOhm @ 7.8A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | U3 (SMD-0.5) | 3-SMD, No Lead |
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Microchip Technology |
MOSFET N-CH 500V 35A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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MOSFET (Metal Oxide) | 500 V | 35A (Tc) | - | 5V @ 1mA | 72 nC @ 10 V | 3261 pF @ 25 V | - | - | - | 140mOhm @ 17.5A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |