Page 16 - Microchip Technology Products - Transistors - FETs, MOSFETs - Single

MIC94031CYW
Microchip Technology

MOSFET P-CH 16V 1A

Package: -

Stock2,080
MIC94053BC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock7,888
MIC94052BC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock6,496
MIC94051BM4 TR
Microchip Technology

MOSFET P-CH 6V 1.8A 8MSOP

Package: TO-253-4, TO-253AA

Stock6,976
MIC94050BM4 TR
Microchip Technology

MOSFET P-CH 6V 1.8A SOT-143

Package: TO-253-4, TO-253AA

Stock5,456
MIC94031BM4 TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

Package: TO-253-4, TO-253AA

Stock138,000
MIC94031YM4-TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

Package: TO-253-4, TO-253AA

Stock2,336
TN2640K4-G
Microchip Technology

MOSFET N-CH 400V 500MA 3DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,680
VP2206N3-G-P003
Microchip Technology

MOSFET P-CH 60V 640MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2,624
TP2640LG-G
Microchip Technology

MOSFET P-CH 400V 0.086A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,744
TN2640LG-G
Microchip Technology

MOSFET N-CH 400V 260MA 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock14,736
LP0701LG-G
Microchip Technology

MOSFET P-CH 16.5V 0.7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,808
VP0550N3-G-P013
Microchip Technology

MOSFET P-CH 500V 0.054A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,216
VN1206L-G-P002
Microchip Technology

MOSFET N-CH 120V 0.23A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,312
VP3203N8-G
Microchip Technology

MOSFET P-CH 30V 1.1A SOT89-3

Package: TO-243AA

Stock68,280
VN0550N3-G-P013
Microchip Technology

MOSFET N-CH 500V 50MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,480
TP2540N3-G-P002
Microchip Technology

MOSFET P-CH 400V 0.086A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,832
TP2435N8-G
Microchip Technology

MOSFET P-CH 350V 0.231A SOT89-3

Package: TO-243AA

Stock7,168
VN3205N8-G
Microchip Technology

MOSFET N-CH 50V 1.5A SOT89-3

Package: TO-243AA

Stock8,784
VN3205N3-G-P002
Microchip Technology

MOSFET N-CH 50V 1.2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock4,192

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
MIC94031CYW	Microchip Technology	MOSFET P-CH 16V 1A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,080	MOSFET (Metal Oxide)	16V	1A (Ta)	-	1.4V @ 250µA	-	-	-	-	568mW (Ta)	450 mOhm @ 100mA, 10V	-55°C ~ 150°C (TJ)	-	-	-
MIC94053BC6-TR	Microchip Technology	MOSFET P-CH 6V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock7,888	MOSFET (Metal Oxide)	6V	2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	-	6V	-	270mW (Ta)	84 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
MIC94052BC6-TR	Microchip Technology	MOSFET P-CH 6V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,496	MOSFET (Metal Oxide)	6V	2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	-	6V	-	270mW (Ta)	84 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
MIC94051BM4 TR	Microchip Technology	MOSFET P-CH 6V 1.8A 8MSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock6,976	MOSFET (Metal Oxide)	6V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	600pF @ 5.5V	6V	-	568mW (Ta)	160 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
MIC94050BM4 TR	Microchip Technology	MOSFET P-CH 6V 1.8A SOT-143 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock5,456	MOSFET (Metal Oxide)	6V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	600pF @ 5.5V	6V	-	568mW (Ta)	160 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
MIC94031BM4 TR	Microchip Technology	MOSFET P-CH 16V 1A SOT-143 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V Vgs (Max): 16V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock138,000	MOSFET (Metal Oxide)	16V	1A (Ta)	2.7V, 10V	1.4V @ 250µA	-	100pF @ 12V	16V	-	568mW (Ta)	450 mOhm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
MIC94031YM4-TR	Microchip Technology	MOSFET P-CH 16V 1A SOT-143 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V Vgs (Max): 16V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock2,336	MOSFET (Metal Oxide)	16V	1A (Ta)	2.7V, 10V	1.4V @ 250µA	-	100pF @ 12V	16V	-	568mW (Ta)	450 mOhm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
TN2640K4-G	Microchip Technology	MOSFET N-CH 400V 500MA 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,680	MOSFET (Metal Oxide)	400V	500mA (Tj)	4.5V, 10V	2V @ 2mA	-	225pF @ 25V	±20V	-	2.5W (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
VP2206N3-G-P003	Microchip Technology	MOSFET P-CH 60V 640MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2,624	MOSFET (Metal Oxide)	60V	640mA (Tj)	5V, 10V	3.5V @ 10mA	-	450pF @ 25V	±20V	-	740mW (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP2640LG-G	Microchip Technology	MOSFET P-CH 400V 0.086A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,744	MOSFET (Metal Oxide)	400V	86mA (Tj)	2.5V, 10V	2V @ 1mA	-	300pF @ 25V	±20V	-	740mW (Ta)	15 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TN2640LG-G	Microchip Technology	MOSFET N-CH 400V 260MA 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock14,736	MOSFET (Metal Oxide)	400V	260mA (Tj)	4.5V, 10V	2V @ 2mA	-	225pF @ 25V	±20V	-	1.3W (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
LP0701LG-G	Microchip Technology	MOSFET P-CH 16.5V 0.7A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,808	MOSFET (Metal Oxide)	16.5V	700mA (Tj)	2V, 5V	1V @ 1mA	-	250pF @ 15V	±10V	-	1.5W (Tc)	1.5 Ohm @ 300mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
VP0550N3-G-P013	Microchip Technology	MOSFET P-CH 500V 0.054A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 54mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 125 Ohm @ 10mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,216	MOSFET (Metal Oxide)	500V	54mA (Tj)	5V, 10V	4.5V @ 1mA	-	70pF @ 25V	±20V	-	1W (Tc)	125 Ohm @ 10mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN1206L-G-P002	Microchip Technology	MOSFET N-CH 120V 0.23A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,312	MOSFET (Metal Oxide)	120V	230mA (Tj)	2.5V, 10V	2V @ 1mA	-	125pF @ 25V	±30V	-	1W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VP3203N8-G	Microchip Technology	MOSFET P-CH 30V 1.1A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock68,280	MOSFET (Metal Oxide)	30V	1.1A (Tj)	4.5V, 10V	3.5V @ 10mA	-	300pF @ 25V	±20V	-	1.6W (Ta)	600 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VN0550N3-G-P013	Microchip Technology	MOSFET N-CH 500V 50MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,480	MOSFET (Metal Oxide)	500V	50mA (Tj)	5V, 10V	4V @ 1mA	-	55pF @ 25V	±20V	-	1W (Tc)	60 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP2540N3-G-P002	Microchip Technology	MOSFET P-CH 400V 0.086A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,832	MOSFET (Metal Oxide)	400V	86mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	125pF @ 25V	±20V	-	740mW (Ta)	25 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP2435N8-G	Microchip Technology	MOSFET P-CH 350V 0.231A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 231mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock7,168	MOSFET (Metal Oxide)	350V	231mA (Tj)	3V, 10V	2.4V @ 1mA	-	200pF @ 25V	±20V	-	1.6W (Ta)	15 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VN3205N8-G	Microchip Technology	MOSFET N-CH 50V 1.5A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock8,784	MOSFET (Metal Oxide)	50V	1.5A (Tj)	4.5V, 10V	2.4V @ 10mA	-	300pF @ 25V	±20V	-	1.6W (Ta)	300 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VN3205N3-G-P002	Microchip Technology	MOSFET N-CH 50V 1.2A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock4,192	MOSFET (Metal Oxide)	50V	1.2A (Tj)	4.5V, 10V	2.4V @ 10mA	-	300pF @ 25V	±20V	-	1W (Tc)	300 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP2424N8-G	Microchip Technology	MOSFET P-CH 240V 0.316A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 316mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock6,016	MOSFET (Metal Oxide)	240V	316mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	200pF @ 25V	±20V	-	1.6W (Ta)	8 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA