Page 4 - Microchip Technology Products - Transistors - FETs, MOSFETs - Single

APT8015JVFR
Microchip Technology

MOSFET N-CH 800V 44A ISOTOP

Package: -

Request a Quote
APT34M60S
Microchip Technology

MOSFET N-CH 600V 36A D3PAK

Package: -

Stock138
APT20M18B2VFRG
Microchip Technology

MOSFET N-CH 200V 100A T-MAX

Package: -

Request a Quote
APT10M11LVRG
Microchip Technology

MOSFET N-CH 100V 100A TO264

Package: -

Stock72
MSC100SM70JCU3
Microchip Technology

SICFET N-CH 700V 124A SOT227

Package: -

Request a Quote
MSC100SM70JCU2
Microchip Technology

SICFET N-CH 700V 124A SOT227

Package: -

Stock33
APT12067LFLLG
Microchip Technology

MOSFET N-CH 1200V 18A TO264

Package: -

Request a Quote
APT20M18LVFRG
Microchip Technology

MOSFET N-CH 200V 100A TO264

Package: -

Request a Quote
APT6013JFLL
Microchip Technology

MOSFET N-CH 600V 39A ISOTOP

Package: -

Request a Quote
APT10026L2LLG
Microchip Technology

MOSFET N-CH 1000V 38A 264 MAX

Package: -

Request a Quote
APT20M34SLLG-TR
Microchip Technology

MOSFET N-CH 200V 74A D3PAK

Package: -

Request a Quote
APT10045JFLL
Microchip Technology

MOSFET N-CH 1000V 21A ISOTOP

Package: -

Request a Quote
APT6029BFLLG
Microchip Technology

MOSFET N-CH 600V 21A TO247

Package: -

Request a Quote
MSC025SMA120S
Microchip Technology

SICFET N-CH 1.2KV 100A D3PAK

Package: -

Stock396
MSC025SMA120B
Microchip Technology

SICFET N-CH 1.2KV 103A TO247-3

Package: -

Stock432
MSC025SMA120J
Microchip Technology

SICFET N-CH 1.2KV 77A SOT227

Package: -

Request a Quote
APT1201R4BLLG
Microchip Technology

MOSFET N-CH 1200V 9A TO247

Package: -

Request a Quote
TP5335MF-G-VAO
Microchip Technology

MOSFET, P-CHANNEL ENHANCEMENT-MO

Package: -

Request a Quote
TN2130K1-G-VAO
Microchip Technology

MOSFET N-CH 300V 85MA SOT23-3

Package: -

Request a Quote
APT10045LFLLG
Microchip Technology

MOSFET N-CH 1000V 23A TO264

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APT8015JVFR	Microchip Technology	MOSFET N-CH 800V 44A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	44A (Tc)	-	4V @ 5mA	285 nC @ 10 V	17650 pF @ 25 V	-	-	-	150mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT34M60S	Microchip Technology	MOSFET N-CH 600V 36A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 624W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock138	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	5V @ 1mA	165 nC @ 10 V	6640 pF @ 25 V	±30V	-	624W (Tc)	190mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT20M18B2VFRG	Microchip Technology	MOSFET N-CH 200V 100A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	100A (Tc)	-	4V @ 2.5mA	330 nC @ 10 V	9880 pF @ 25 V	-	-	-	18mOhm @ 50A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT10M11LVRG	Microchip Technology	MOSFET N-CH 100V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (L) Package / Case: TO-264-3, TO-264AA	Package: -	Stock72	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	4V @ 2.5mA	450 nC @ 10 V	10300 pF @ 25 V	±30V	-	520W (Tc)	11mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (L)	TO-264-3, TO-264AA
MSC100SM70JCU3	Microchip Technology	SICFET N-CH 700V 124A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 365W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	124A (Tc)	20V	2.4V @ 4mA	215 nC @ 20 V	4500 pF @ 700 V	+25V, -10V	-	365W (Tc)	19mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
MSC100SM70JCU2	Microchip Technology	SICFET N-CH 700V 124A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 365W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Stock33	SiCFET (Silicon Carbide)	700 V	124A (Tc)	20V	2.4V @ 4mA	215 nC @ 20 V	4500 pF @ 700 V	+25V, -10V	-	365W (Tc)	19mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
APT12067LFLLG	Microchip Technology	MOSFET N-CH 1200V 18A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	18A (Tc)	-	5V @ 2.5mA	150 nC @ 10 V	4420 pF @ 25 V	-	-	-	670mOhm @ 9A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT20M18LVFRG	Microchip Technology	MOSFET N-CH 200V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	100A (Tc)	-	4V @ 2.5mA	330 nC @ 10 V	9880 pF @ 25 V	-	-	-	18mOhm @ 50A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT6013JFLL	Microchip Technology	MOSFET N-CH 600V 39A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	39A (Tc)	-	5V @ 2.5mA	130 nC @ 10 V	5630 pF @ 25 V	-	-	-	130mOhm @ 19.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT10026L2LLG	Microchip Technology	MOSFET N-CH 1000V 38A 264 MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 264 MAX™ [L2] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	38A (Tc)	-	5V @ 5mA	267 nC @ 10 V	7114 pF @ 25 V	-	-	-	260mOhm @ 19A, 10V	-	Through Hole	264 MAX™ [L2]	TO-264-3, TO-264AA
APT20M34SLLG-TR	Microchip Technology	MOSFET N-CH 200V 74A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	74A (Tc)	10V	5V @ 1mA	60 nC @ 10 V	3660 pF @ 25 V	±30V	-	403W (Tc)	34mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10045JFLL	Microchip Technology	MOSFET N-CH 1000V 21A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	5V @ 2.5mA	154 nC @ 10 V	4350 pF @ 25 V	-	-	-	460mOhm @ 11.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT6029BFLLG	Microchip Technology	MOSFET N-CH 600V 21A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	21A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2615 pF @ 25 V	-	-	300W (Tc)	290mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
MSC025SMA120S	Microchip Technology	SICFET N-CH 1.2KV 100A D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock396	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC025SMA120B	Microchip Technology	SICFET N-CH 1.2KV 103A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock432	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	500W (Tc)	31mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MSC025SMA120J	Microchip Technology	SICFET N-CH 1.2KV 77A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	77A (Tc)	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	278W (Tc)	31mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
APT1201R4BLLG	Microchip Technology	MOSFET N-CH 1200V 9A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	9A (Tc)	10V	5V @ 1mA	120 nC @ 10 V	2500 pF @ 25 V	±30V	-	300W (Tc)	1.4Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TP5335MF-G-VAO	Microchip Technology	MOSFET, P-CHANNEL ENHANCEMENT-MO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (2x2) Package / Case: 6-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	350 V	85mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	110 pF @ 25 V	±20V	-	360mW (Ta)	30Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (2x2)	6-VDFN Exposed Pad
TN2130K1-G-VAO	Microchip Technology	MOSFET N-CH 300V 85MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	85mA (Tj)	4.5V	2.4V @ 1mA	-	50 pF @ 25 V	±20V	-	360mW (Ta)	25Ohm @ 120mA, 4.5V	-55°C ~ 150°C (TA)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
APT10045LFLLG	Microchip Technology	MOSFET N-CH 1000V 23A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	23A (Tc)	-	5V @ 2.5mA	154 nC @ 10 V	4350 pF @ 25 V	-	-	-	460mOhm @ 11.5A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT5018BFLLG	Microchip Technology	MOSFET N-CH 500V 27A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	27A (Tc)	-	5V @ 1mA	58 nC @ 10 V	2596 pF @ 25 V	-	-	-	180mOhm @ 13.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT10045LLLG	Microchip Technology	MOSFET N-CH 1000V 23A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	23A (Tc)	-	5V @ 2.5mA	154 nC @ 10 V	4350 pF @ 25 V	-	-	-	450mOhm @ 11.5A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT1201R5BVFRG	Microchip Technology	MOSFET N-CH 1200V 10A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	10A (Tc)	10V	4V @ 1mA	285 nC @ 10 V	4440 pF @ 25 V	-	-	-	1.5Ohm @ 5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
MSC750SMA170SA	Microchip Technology	MOSFET SIC 1700 V 750 MOHM D2PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab)	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1700 V	6A (Tc)	20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	184 pF @ 1000 V	+23V, -10V	-	63W (Tc)	940mOhm @ 2.5A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, DPak (7 Leads + Tab)
MSC750SMA170B4	Microchip Technology	TRANS SJT 1700V TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock177	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	184 pF @ 1360 V	+23V, -10V	-	68W (Tc)	940mOhm @ 2.5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
MSC015SMA070B4	Microchip Technology	TRANS SJT N-CH 700V 140A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock69	SiCFET (Silicon Carbide)	700 V	140A (Tc)	20V	2.4V @ 4mA	215 nC @ 20 V	4500 pF @ 700 V	+23V, -10V	-	455W (Tc)	19mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
APT8030JVFR	Microchip Technology	MOSFET N-CH 800V 25A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	25A (Tc)	-	4V @ 2.5mA	510 nC @ 10 V	7900 pF @ 25 V	-	-	-	300mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT20M11JFLL	Microchip Technology	MOSFET N-CH 200V 176A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 176A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10320 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	176A (Tc)	-	5V @ 5mA	180 nC @ 10 V	10320 pF @ 25 V	-	-	-	11mOhm @ 88A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC