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Microchip Technology |
MOSFET N-CH 500V 88A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 88A (Tc) | - | 5V @ 5mA | 270 nC @ 10 V | 12000 pF @ 25 V | - | - | - | 38mOhm @ 44A, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 600V 21A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 300mOhm @ 10.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 4V @ 1mA | 150 nC @ 10 V | 3750 pF @ 25 V | - | - | - | 300mOhm @ 10.5A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 300V 54A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 403W (Tc)
- Rds On (Max) @ Id, Vgs: 61mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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MOSFET (Metal Oxide) | 300 V | 54A (Tc) | 10V | 5V @ 1mA | 64 nC @ 10 V | 3720 pF @ 25 V | ±30V | - | 403W (Tc) | 61mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
SICFET N-CH 700V 131A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock1,299 |
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SiCFET (Silicon Carbide) | 700 V | 131A (Tc) | 20V | 2.4V @ 1mA | 215 nC @ 20 V | 4500 pF @ 700 V | +25V, -10V | - | 400W (Tc) | 19mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microchip Technology |
SICFET N-CH 700V 126A D3PAK
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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SiCFET (Silicon Carbide) | 700 V | 126A (Tc) | 20V | 2.4V @ 4mA (Typ) | 215 nC @ 20 V | 4500 pF @ 700 V | +23V, -10V | - | 370W (Tc) | 19mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET SIC 700 V 15 MOHM SOT-227
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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SiCFET (Silicon Carbide) | 700 V | - | - | - | - | - | - | - | - | - | - | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 200V 176A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10320 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 176A (Tc) | - | 5V @ 5mA | 180 nC @ 10 V | 10320 pF @ 25 V | - | - | - | 11mOhm @ 88A, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 500V 30A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 4V @ 1mA | 300 nC @ 10 V | 5280 pF @ 25 V | - | - | - | 170mOhm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 1000V 8A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 1000 V | 8A (Tc) | 10V | 5V @ 1mA | 55 nC @ 10 V | 1320 pF @ 25 V | ±30V | - | 266W (Tc) | 1.6Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 600V 36A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 624W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock273 |
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MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | ±30V | - | 624W (Tc) | 190mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 600V 38A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | 4V @ 2.5mA | 475 nC @ 10 V | 9000 pF @ 25 V | - | - | - | 150mOhm @ 500mA, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microchip Technology |
MOSFET N-CH 800V 20A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 20A (Tc) | - | 5V @ 1mA | 85 nC @ 10 V | 2500 pF @ 25 V | - | - | - | 430mOhm @ 5A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 200V 56A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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MOSFET (Metal Oxide) | 200 V | 56A (Tc) | - | 4V @ 1mA | 195 nC @ 10 V | 4860 pF @ 25 V | - | - | - | 45mOhm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 600V 36A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 624W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | ±30V | - | 624W (Tc) | 190mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 800V 16A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 16A (Tc) | - | 4V @ 1mA | 275 nC @ 10 V | 4440 pF @ 25 V | - | - | - | 560mOhm @ 500mA, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 1000V 11A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
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MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | - | 4V @ 1mA | 225 nC @ 10 V | 3660 pF @ 25 V | - | - | - | 1Ohm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET SIC 3300 V 400 MOHM TO-24
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.97V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 579 pF @ 2400 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 131W (Tc)
- Rds On (Max) @ Id, Vgs: 520mOhm @ 5A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock885 |
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SiCFET (Silicon Carbide) | 3300 V | 11A (Tc) | 20V | 2.97V @ 1mA | 37 nC @ 20 V | 579 pF @ 2400 V | +23V, -10V | - | 131W (Tc) | 520mOhm @ 5A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Microchip Technology |
MOSFET N-CH 1000V 13A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 860mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 1000 V | 13A (Tc) | - | 4V @ 1mA | 275 nC @ 10 V | 4440 pF @ 25 V | - | - | - | 860mOhm @ 500mA, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET SIC 1200V 17 MOHM TO-268
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | 5280 pF @ 1000 V | +22V, -10V | - | 357W (Tc) | 22mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET SIC 1200V 17 MOHM TO-247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 455W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock6 |
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SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | 5280 pF @ 1000 V | +22V, -10V | - | 455W (Tc) | 22mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microchip Technology |
MOSFET SIC 1200V 17 MOHM SOT-227
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: SOT-227
- Package / Case: -
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Package: - |
Stock30 |
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SiCFET (Silicon Carbide) | 1200 V | 88A (Tc) | 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | 5280 pF @ 1000 V | +23V, -10V | - | 278W (Tc) | 22mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | - | SOT-227 | - |
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Microchip Technology |
MOSFET N-CH 100V 225A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 1050 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 225A (Tc) | - | 4V @ 5mA | 1050 nC @ 10 V | 21600 pF @ 25 V | - | - | - | 7mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 500V 89A 264 MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 50mOhm @ 44.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: 264 MAX™ [L2]
- Package / Case: TO-264-3, TO-264AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 89A (Tc) | - | 5V @ 5mA | 200 nC @ 10 V | 10550 pF @ 25 V | - | - | - | 50mOhm @ 44.5A, 10V | - | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
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Microchip Technology |
MOSFET N-CH 800V 52A 264 MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: 264 MAX™ [L2]
- Package / Case: TO-264-3, TO-264AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 52A (Tc) | - | 5V @ 5mA | 285 nC @ 10 V | 7238 pF @ 25 V | - | - | - | 140mOhm @ 26A, 10V | - | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
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Microchip Technology |
MOSFET N-CH 100V 144A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 11mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 144A (Tc) | - | 4V @ 2.5mA | 450 nC @ 10 V | 10380 pF @ 25 V | - | - | - | 11mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET SIC 1200 V 180 MOHM TO-26
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.26V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, DPak (7 Leads + Tab)
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 3.26V @ 500µA | 34 nC @ 20 V | 510 pF @ 1000 V | +23V, -10V | - | 125W (Tc) | 225mOhm @ 8A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, DPak (7 Leads + Tab) |
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Microchip Technology |
MOSFET SIC 1200 V 180 MOHM TO-26
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.26V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock543 |
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SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 3.26V @ 500µA | 34 nC @ 20 V | 510 pF @ 1000 V | +23V, -10V | - | 125W (Tc) | 225mOhm @ 8A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET 1200V 25A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock3 |
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MOSFET (Metal Oxide) | 1200 V | 21A (Tc) | 5V, 20V | 4.5V @ 500µA | 36 nC @ 20 V | 530 pF @ 1000 V | +23V, -10V | - | 147W (Tc) | 225mOhm @ 8A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |