Page 3 - Microsemi Corporation Products - Transistors - FETs, MOSFETs - Single

APT10M11JVRU3
Microsemi Corporation

MOSFET N-CH 100V 142A SOT227

Package: SOT-227-4, miniBLOC

Stock4,480
APT47M60J
Microsemi Corporation

MOSFET N-CH 600V 49A SOT-227

Package: SOT-227-4, miniBLOC

Stock4,768
APT5010JLLU2
Microsemi Corporation

MOSFET N-CH 500V 41A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,472
APT30F60J
Microsemi Corporation

MOSFET N-CH 600V 31A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,760
APT26F120L
Microsemi Corporation

MOSFET N-CH 1200V 27A TO-264

Package: TO-264-3, TO-264AA

Stock7,408
APT34F100L
Microsemi Corporation

MOSFET N-CH 1000V 35A TO264

Package: TO-264-3, TO-264AA

Stock5,632
APT28M120L
Microsemi Corporation

MOSFET N-CH 1200V 29A TO264

Package: TO-264-3, TO-264AA

Stock7,744
APT10078BLLG
Microsemi Corporation

MOSFET N-CH 1000V 14A TO-247

Package: TO-247-3

Stock4,736
APT37M100B2
Microsemi Corporation

MOSFET N-CH 1000V 37A T-MAX

Package: TO-247-3 Variant

Stock6,228
APT66F60B2
Microsemi Corporation

MOSFET N-CH 600V 70A TO-247

Package: TO-247-3 Variant

Stock6,108
APT24M120B2
Microsemi Corporation

MOSFET N-CH 1200V 24A T-MAX

Package: TO-247-3 Variant

Stock6,300
APT31M100L
Microsemi Corporation

MOSFET N-CH 1000V 32A TO264

Package: TO-264-3, TO-264AA

Stock103,464
APT5010B2FLLG
Microsemi Corporation

MOSFET N-CH 500V 46A T-MAX

Package: TO-247-3 Variant

Stock6,928
APT56F50B2
Microsemi Corporation

MOSFET N-CH 500V 56A TO-247

Package: TO-247-3 Variant

Stock5,280
APT43M60L
Microsemi Corporation

MOSFET N-CH 600V 45A TO-264

Package: TO-264-3, TO-264AA

Stock6,288
APT34N80B2C3G
Microsemi Corporation

MOSFET N-CH 800V 34A T-MAX

Package: TO-247-3 Variant

Stock115,200
APT1003RBLLG
Microsemi Corporation

MOSFET N-CH 1000V 4A TO-247

Package: TO-247-3

Stock5,264
APT53N60BC6
Microsemi Corporation

MOSFET N-CH 600V 53A TO-247

Package: TO-247-3

Stock23,100
APT18M80B
Microsemi Corporation

MOSFET N-CH 800V 19A TO-247

Package: TO-247-3

Stock4,240
APT37F50B
Microsemi Corporation

MOSFET N-CH 500V 37A TO-247

Package: TO-247-3

Stock7,552

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APT10M11JVRU3	Microsemi Corporation	MOSFET N-CH 100V 142A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 142A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,480	MOSFET (Metal Oxide)	100V	142A	10V	4V @ 2.5mA	300nC @ 10V	8600pF @ 25V	±30V	-	450W (Tc)	11 mOhm @ 71A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT47M60J	Microsemi Corporation	MOSFET N-CH 600V 49A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,768	MOSFET (Metal Oxide)	600V	49A	10V	5V @ 2.5mA	330nC @ 10V	13190pF @ 25V	±30V	-	540W (Tc)	90 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT5010JLLU2	Microsemi Corporation	MOSFET N-CH 500V 41A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 41A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 378W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,472	MOSFET (Metal Oxide)	500V	41A	10V	5V @ 2.5mA	96nC @ 10V	4360pF @ 25V	±30V	-	378W (Tc)	100 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT30F60J	Microsemi Corporation	MOSFET N-CH 600V 31A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 355W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,760	MOSFET (Metal Oxide)	600V	31A	10V	5V @ 2.5mA	215nC @ 10V	8590pF @ 25V	±30V	-	355W (Tc)	150 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT26F120L	Microsemi Corporation	MOSFET N-CH 1200V 27A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,408	MOSFET (Metal Oxide)	1200V	27A (Tc)	10V	5V @ 2.5mA	300nC @ 10V	9670pF @ 25V	±30V	-	1135W (Tc)	650 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT34F100L	Microsemi Corporation	MOSFET N-CH 1000V 35A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,632	MOSFET (Metal Oxide)	1000V	35A (Tc)	10V	5V @ 2.5mA	305nC @ 10V	9835pF @ 25V	±30V	-	1135W (Tc)	400 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT28M120L	Microsemi Corporation	MOSFET N-CH 1200V 29A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,744	MOSFET (Metal Oxide)	1200V	29A (Tc)	10V	5V @ 2.5mA	300nC @ 10V	9670pF @ 25V	±30V	-	1135W (Tc)	530 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT10078BLLG	Microsemi Corporation	MOSFET N-CH 1000V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock4,736	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	5V @ 1mA	95nC @ 10V	2525pF @ 25V	±30V	-	403W (Tc)	780 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT37M100B2	Microsemi Corporation	MOSFET N-CH 1000V 37A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,228	MOSFET (Metal Oxide)	1000V	37A (Tc)	10V	5V @ 2.5mA	305nC @ 10V	9835pF @ 25V	±30V	-	1135W (Tc)	330 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
APT66F60B2	Microsemi Corporation	MOSFET N-CH 600V 70A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,108	MOSFET (Metal Oxide)	600V	70A (Tc)	10V	5V @ 2.5mA	330nC @ 10V	13190pF @ 25V	±30V	-	1135W (Tc)	90 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
APT24M120B2	Microsemi Corporation	MOSFET N-CH 1200V 24A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,300	MOSFET (Metal Oxide)	1200V	24A (Tc)	10V	5V @ 2.5mA	260nC @ 10V	8370pF @ 25V	±30V	-	1040W (Tc)	630 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
APT31M100L	Microsemi Corporation	MOSFET N-CH 1000V 32A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock103,464	MOSFET (Metal Oxide)	1000V	32A (Tc)	10V	5V @ 2.5mA	260nC @ 10V	8500pF @ 25V	±30V	-	1040W (Tc)	400 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
APT5010B2FLLG	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,928	MOSFET (Metal Oxide)	500V	46A (Tc)	10V	5V @ 2.5mA	95nC @ 10V	4360pF @ 25V	±30V	-	520W (Tc)	100 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
APT56F50B2	Microsemi Corporation	MOSFET N-CH 500V 56A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock5,280	MOSFET (Metal Oxide)	500V	56A (Tc)	10V	5V @ 2.5mA	220nC @ 10V	8800pF @ 25V	±30V	-	780W (Tc)	100 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
APT43M60L	Microsemi Corporation	MOSFET N-CH 600V 45A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,288	MOSFET (Metal Oxide)	600V	45A (Tc)	10V	5V @ 2.5mA	215nC @ 10V	8590pF @ 25V	±30V	-	780W (Tc)	150 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT34N80B2C3G	Microsemi Corporation	MOSFET N-CH 800V 34A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock115,200	MOSFET (Metal Oxide)	800V	34A (Tc)	10V	3.9V @ 2mA	355nC @ 10V	4510pF @ 25V	±20V	-	417W (Tc)	145 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
APT1003RBLLG	Microsemi Corporation	MOSFET N-CH 1000V 4A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock5,264	MOSFET (Metal Oxide)	1000V	4A (Tc)	10V	5V @ 1mA	34nC @ 10V	694pF @ 25V	±30V	-	139W (Tc)	3 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT53N60BC6	Microsemi Corporation	MOSFET N-CH 600V 53A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock23,100	MOSFET (Metal Oxide)	600V	53A (Tc)	10V	3.5V @ 1.72mA	154nC @ 10V	4020pF @ 25V	±20V	-	417W (Tc)	70 mOhm @ 25.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT18M80B	Microsemi Corporation	MOSFET N-CH 800V 19A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3760pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock4,240	MOSFET (Metal Oxide)	800V	19A (Tc)	10V	5V @ 1mA	120nC @ 10V	3760pF @ 25V	±30V	-	500W (Tc)	530 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT37F50B	Microsemi Corporation	MOSFET N-CH 500V 37A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5710pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock7,552	MOSFET (Metal Oxide)	500V	37A (Tc)	10V	5V @ 1mA	145nC @ 10V	5710pF @ 25V	±30V	-	520W (Tc)	150 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT30N60BC6	Microsemi Corporation	MOSFET N-CH 600V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock6,420	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	3.5V @ 960µA	88nC @ 10V	2267pF @ 25V	±20V	-	219W (Tc)	125 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT10021JLL	Microsemi Corporation	MOSFET N-CH 1000V 37A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 37A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,288	MOSFET (Metal Oxide)	1000V	37A	10V	5V @ 5mA	395nC @ 10V	9750pF @ 25V	±30V	-	694W (Tc)	210 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT60M60JFLL	Microsemi Corporation	MOSFET N-CH 600V 70A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 289nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,512	MOSFET (Metal Oxide)	600V	70A	10V	5V @ 5mA	289nC @ 10V	12630pF @ 25V	±30V	-	694W (Tc)	60 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT50M38JLL	Microsemi Corporation	MOSFET N-CH 500V 88A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,744	MOSFET (Metal Oxide)	500V	88A	10V	5V @ 5mA	270nC @ 10V	12000pF @ 25V	±30V	-	694W (Tc)	38 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT53F80J	Microsemi Corporation	MOSFET N-CH 800V 57A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 57A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,376	MOSFET (Metal Oxide)	800V	57A	10V	5V @ 5mA	570nC @ 10V	17550pF @ 25V	±30V	-	960W (Tc)	110 mOhm @ 43A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT58M80J	Microsemi Corporation	MOSFET N-CH 800V 58A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 58A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,072	MOSFET (Metal Oxide)	800V	58A	10V	5V @ 5mA	570nC @ 10V	17550pF @ 25V	±30V	-	960W (Tc)	110 mOhm @ 43A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT50M65JLL	Microsemi Corporation	MOSFET N-CH 500V 58A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 58A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,792	MOSFET (Metal Oxide)	500V	58A	10V	5V @ 2.5mA	141nC @ 10V	7010pF @ 25V	±30V	-	520W (Tc)	65 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT8020JLL	Microsemi Corporation	MOSFET N-CH 800V 33A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 33A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,100	MOSFET (Metal Oxide)	800V	33A	10V	5V @ 2.5mA	195nC @ 10V	5200pF @ 25V	±30V	-	520W (Tc)	200 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC