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Microsemi Corporation |
MOSFET N-CH 1000V 23A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 545W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock3,840 |
|
MOSFET (Metal Oxide) | 1000V | 23A | 10V | - | 305nC @ 10V | 9835pF @ 25V | ±30V | - | 545W (Tc) | 380 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 1200V 18A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Rds On (Max) @ Id, Vgs: 670 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
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Package: TO-247-3 Variant |
Stock4,304 |
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MOSFET (Metal Oxide) | 1200V | 18A (Tc) | 10V | 5V @ 2.5mA | 150nC @ 10V | 4420pF @ 25V | ±30V | - | 565W (Tc) | 670 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Microsemi Corporation |
MOSFET N-CH 800V 38A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock4,496 |
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MOSFET (Metal Oxide) | 800V | 38A (Tc) | 10V | 5V @ 2.5mA | 195nC @ 10V | 5200pF @ 25V | ±30V | - | 694W (Tc) | 220 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi Corporation |
MOSFET N-CH 1000V 28A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock7,536 |
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MOSFET (Metal Oxide) | 1000V | 28A (Tc) | 10V | 5V @ 2.5mA | 186nC @ 10V | 5185pF @ 25V | ±30V | - | 690W (Tc) | 350 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi Corporation |
MOSFET N-CH 1000V 21A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 21A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 462W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,976 |
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MOSFET (Metal Oxide) | 1000V | 21A | 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | ±30V | - | 462W (Tc) | 380 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 1000V 23A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
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Package: TO-247-3 Variant |
Stock5,424 |
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MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | ±30V | - | 565W (Tc) | 450 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Microsemi Corporation |
MOSFET N-CH 500V 67A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
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Package: TO-247-3 Variant |
Stock6,144 |
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MOSFET (Metal Oxide) | 500V | 67A (Tc) | 10V | 5V @ 2.5mA | 141nC @ 10V | 7010pF @ 25V | ±30V | - | 694W (Tc) | 65 mOhm @ 33.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Microsemi Corporation |
MOSFET N-CH 500V 51A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock5,552 |
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MOSFET (Metal Oxide) | 500V | 51A | 10V | 5V @ 2.5mA | 290nC @ 10V | 11600pF @ 25V | ±30V | - | 480W (Tc) | 75 mOhm @ 37A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 800V 31A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 15.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock6,272 |
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MOSFET (Metal Oxide) | 800V | 31A (Tc) | 10V | 5V @ 2.5mA | 160nC @ 10V | 4670pF @ 25V | ±30V | - | 565W (Tc) | 260 mOhm @ 15.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi Corporation |
MOSFET N-CH 500V 38A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 38A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 355W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock6,272 |
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MOSFET (Metal Oxide) | 500V | 38A | 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | ±30V | - | 355W (Tc) | 100 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 800V 31A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
|
Package: TO-247-3 Variant |
Stock4,512 |
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MOSFET (Metal Oxide) | 800V | 31A (Tc) | 10V | 5V @ 2.5mA | 160nC @ 10V | 4670pF @ 25V | ±30V | - | 565W (Tc) | 240 mOhm @ 15.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Microsemi Corporation |
MOSFET N-CH 1200V 23A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8370pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
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Package: TO-247-3 Variant |
Stock3,328 |
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MOSFET (Metal Oxide) | 1200V | 23A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | ±30V | - | 1040W (Tc) | 700 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Microsemi Corporation |
MOSFET N-CH 600V 45A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
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Package: TO-247-3 Variant |
Stock7,040 |
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MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | ±30V | - | 780W (Tc) | 150 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Microsemi Corporation |
MOSFET N-CH 600V 45A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
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Package: TO-247-3 Variant |
Stock5,760 |
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MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | ±30V | - | 780W (Tc) | 150 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Microsemi Corporation |
MOSFET N-CH 500V 41A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 41A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 378W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,096 |
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MOSFET (Metal Oxide) | 500V | 41A | 10V | 5V @ 2.5mA | 96nC @ 10V | 4360pF @ 25V | ±30V | - | 378W (Tc) | 100 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 800V 41A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock59,016 |
|
MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | ±30V | - | 1040W (Tc) | 240 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi Corporation |
MOSFET N-CH 1000V 12A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock28,800 |
|
MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5V @ 1mA | 71nC @ 10V | 1969pF @ 25V | ±30V | - | 298W (Tc) | 950 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi Corporation |
MOSFET N-CH 200V 67A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3 [S]
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock7,216 |
|
MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | ±30V | - | 370W (Tc) | 38 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Microsemi Corporation |
MOSFET N-CH 600V 47A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock60,036 |
|
MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 3.9V @ 2.7mA | 260nC @ 10V | 7015pF @ 25V | ±20V | - | 417W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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|
Microsemi Corporation |
MOSFET N-CH 800V 11A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,288 |
|
MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.9V @ 680µA | 60nC @ 10V | 1585pF @ 25V | ±20V | - | 156W (Tc) | 450 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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|
Microsemi Corporation |
MOSFET N-CH 1000V 215A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 215A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 5000W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock5,120 |
|
MOSFET (Metal Oxide) | 1000V | 215A | 10V | 5V @ 30mA | 1602nC @ 10V | 42700pF @ 25V | ±30V | - | 5000W (Tc) | 52 mOhm @ 107.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET N-CH 600V 95A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 95A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 462W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock6,208 |
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MOSFET (Metal Oxide) | 600V | 95A | 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | ±20V | - | 462W (Tc) | 24 mOhm @ 47.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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|
Microsemi Corporation |
MOSFET N-CH 500V 103A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 103A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock3,648 |
|
MOSFET (Metal Oxide) | 500V | 103A | 10V | 5V @ 5mA | 620nC @ 10V | 24600pF @ 25V | ±30V | - | 960W (Tc) | 36 mOhm @ 75A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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|
Microsemi Corporation |
MOSFET N-CH 600V 58A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 58A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock6,064 |
|
MOSFET (Metal Oxide) | 600V | 58A | 10V | 5V @ 5mA | 195nC @ 10V | 8930pF @ 25V | ±30V | - | 595W (Tc) | 75 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 500V 51A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock7,952 |
|
MOSFET (Metal Oxide) | 500V | 51A | 10V | 5V @ 1mA | 123nC @ 10V | 5590pF @ 25V | ±30V | - | 290W (Tc) | 75 mOhm @ 25.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 500V 58A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 58A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 543W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock7,536 |
|
MOSFET (Metal Oxide) | 500V | 58A | 10V | 5V @ 2.5mA | 340nC @ 10V | 10800pF @ 25V | ±30V | - | 543W (Tc) | 65 mOhm @ 42A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 500V 44A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 312nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7410pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock6,108 |
|
MOSFET (Metal Oxide) | 500V | 44A | 10V | 4V @ 2.5mA | 312nC @ 10V | 7410pF @ 25V | ±30V | - | 450W (Tc) | 100 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 1200V 19A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 19A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 545W (Tc)
- Rds On (Max) @ Id, Vgs: 530 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock3,808 |
|
MOSFET (Metal Oxide) | 1200V | 19A | 10V | 5V @ 2.5mA | 300nC @ 10V | 9670pF @ 25V | ±30V | - | 545W (Tc) | 530 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |