Page 16 - NXP Products - Transistors - FETs, MOSFETs - Single

PMR290UNE,115
NXP

MOSFET N-CH 20V 700MA SC-75

Package: SC-75, SOT-416

Stock2,048
BUK962R1-40E,118
NXP

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,712
BUK961R7-40E,118
NXP

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,784
BUK951R8-40EQ
NXP

MOSFET N-CH 40V TO-220AB

Package: TO-220-3

Stock6,608
PMT760EN,115
NXP

MOSFET N-CH 100V SC-73

Package: TO-261-4, TO-261AA

Stock3,152
PMT200EN,115
NXP

MOSFET N-CH 100V 1.8A SC-73

Package: TO-261-4, TO-261AA

Stock5,040
BUK9C5R3-100EJ
NXP

MOSFET N-CH 100V D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock2,528
BUK9C3R8-80EJ
NXP

MOSFET N-CH 80V D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock7,216
BUK9C2R2-60EJ
NXP

MOSFET N-CH 60V D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,936
BUK7C5R4-100EJ
NXP

MOSFET N-CH 100V 147A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock4,096
BUK7C4R5-100EJ
NXP

MOSFET N-CH 100V 169A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,264
BUK7C3R8-80EJ
NXP

MOSFET N-CH 80V 186A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,440
BUK7C3R1-80EJ
NXP

MOSFET N-CH 80V 200A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock7,920
BUK7C2R2-60EJ
NXP

MOSFET N-CH 60V 200A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock2,944
BUK7C1R8-60EJ
NXP

MOSFET N-CH 60V 200A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock2,224
BUK7C1R4-40EJ
NXP

MOSFET N-CH 40V 200A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,040
BUK7C1R2-40EJ
NXP

MOSFET N-CH 40V 200A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock4,496
BUK961R5-30E,118
NXP

MOSFET N-CH 30V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,320
BUK761R4-30E,118
NXP

MOSFET N-CH 30V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,360
PSMN8R5-100XSQ
NXP

MOSFET N-CH 100V 49A TO-220F

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,384

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PMR290UNE,115	NXP	MOSFET N-CH 20V 700MA SC-75 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 250mW (Ta), 770mW (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock2,048	MOSFET (Metal Oxide)	20V	700mA (Ta)	1.8V, 4.5V	950mV @ 250µA	0.68nC @ 4.5V	83pF @ 10V	±8V	-	250mW (Ta), 770mW (Tc)	380 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
BUK962R1-40E,118	NXP	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,712	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	2.1V @ 1mA	87.8nC @ 5V	13160pF @ 25V	±10V	-	293W (Tc)	1.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK961R7-40E,118	NXP	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 15010pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,784	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	2.1V @ 1mA	105.4nC @ 5V	15010pF @ 25V	±10V	-	324W (Tc)	1.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK951R8-40EQ	NXP	MOSFET N-CH 40V TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,608	MOSFET (Metal Oxide)	40V	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220AB	TO-220-3
PMT760EN,115	NXP	MOSFET N-CH 100V SC-73 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 80V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 6.2W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,152	MOSFET (Metal Oxide)	100V	900mA (Ta)	4.5V, 10V	2.5V @ 250µA	3nC @ 10V	160pF @ 80V	±20V	-	800mW (Ta), 6.2W (Tc)	950 mOhm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PMT200EN,115	NXP	MOSFET N-CH 100V 1.8A SC-73 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 80V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,040	MOSFET (Metal Oxide)	100V	1.8A (Ta)	4.5V, 10V	2.5V @ 250µA	10nC @ 10V	475pF @ 80V	±20V	-	800mW (Ta), 8.3W (Tc)	235 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK9C5R3-100EJ	NXP	MOSFET N-CH 100V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,528	MOSFET (Metal Oxide)	100V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK-7	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK9C3R8-80EJ	NXP	MOSFET N-CH 80V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock7,216	MOSFET (Metal Oxide)	80V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK-7	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK9C2R2-60EJ	NXP	MOSFET N-CH 60V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,936	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK-7	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C5R4-100EJ	NXP	MOSFET N-CH 100V 147A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock4,096	MOSFET (Metal Oxide)	100V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK-7	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C4R5-100EJ	NXP	MOSFET N-CH 100V 169A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,264	MOSFET (Metal Oxide)	100V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C3R8-80EJ	NXP	MOSFET N-CH 80V 186A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,440	MOSFET (Metal Oxide)	80V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C3R1-80EJ	NXP	MOSFET N-CH 80V 200A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock7,920	MOSFET (Metal Oxide)	80V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C2R2-60EJ	NXP	MOSFET N-CH 60V 200A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 7-DDPAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,944	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	7-DDPAK	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C1R8-60EJ	NXP	MOSFET N-CH 60V 200A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,224	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C1R4-40EJ	NXP	MOSFET N-CH 40V 200A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,040	MOSFET (Metal Oxide)	40V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK7C1R2-40EJ	NXP	MOSFET N-CH 40V 200A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock4,496	MOSFET (Metal Oxide)	40V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK961R5-30E,118	NXP	MOSFET N-CH 30V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,320	MOSFET (Metal Oxide)	30V	120A (Tc)	5V, 10V	2.1V @ 1mA	93.4nC @ 5V	14500pF @ 25V	±10V	-	324W (Tc)	1.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK761R4-30E,118	NXP	MOSFET N-CH 30V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,360	MOSFET (Metal Oxide)	30V	120A (Tc)	10V	4V @ 1mA	130nC @ 10V	9580pF @ 25V	±20V	-	324W (Tc)	1.45 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN8R5-100XSQ	NXP	MOSFET N-CH 100V 49A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 49A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5512pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,384	MOSFET (Metal Oxide)	100V	49A (Tj)	10V	4V @ 1mA	100nC @ 10V	5512pF @ 50V	±20V	-	55W (Tc)	8.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack, Isolated Tab
PSMN023-40YLCX	NXP	MOSFET N-CH 40V 24A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,848	MOSFET (Metal Oxide)	40V	24A (Tc)	4.5V, 10V	1.95V @ 1mA	8.4nC @ 10V	520pF @ 20V	±20V	-	25W (Tc)	23 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PSMN4R6-100XS,127	NXP	MOSFET N-CH 100V 70.4A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63.8W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,376	MOSFET (Metal Oxide)	100V	70.4A (Tc)	10V	4V @ 1mA	153nC @ 10V	9900pF @ 50V	±20V	-	63.8W (Tc)	4.6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack, Isolated Tab
BUK9Y9R9-80E,115	NXP	MOSFET N-CH 80V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,664	MOSFET (Metal Oxide)	80V	-	-	-	-	-	-	-	-	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK9Y98-80E,115	NXP	MOSFET N-CH 80V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,752	MOSFET (Metal Oxide)	80V	-	-	-	-	-	-	-	-	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK9Y7R8-80E,115	NXP	MOSFET N-CH 80V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,640	MOSFET (Metal Oxide)	80V	-	-	-	-	-	-	-	-	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK9E1R8-40E,127	NXP	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,840	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	±10V	-	349W (Tc)	1.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
BUK968R3-40E,118	NXP	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,584	MOSFET (Metal Oxide)	40V	75A (Tc)	5V, 10V	2.1V @ 1mA	20.9nC @ 5V	2600pF @ 25V	±10V	-	96W (Tc)	6.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9E8R5-40E,127	NXP	MOSFET N-CH 40V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,760	MOSFET (Metal Oxide)	40V	75A (Tc)	5V, 10V	2.1V @ 1mA	20.9nC @ 5V	2600pF @ 25V	±10V	-	96W (Tc)	6.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA