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NXP |
MOSFET N-CH 30V 51A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 726pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 49W (Tc)
- Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock3,728 |
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MOSFET (Metal Oxide) | 30V | 51A (Tj) | 4.5V, 10V | 2.15V @ 1mA | 14.8nC @ 10V | 726pF @ 15V | ±20V | - | 49W (Tc) | 10.7 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 40V 35.3A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 35.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 693pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 59.4W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock7,872 |
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MOSFET (Metal Oxide) | 40V | 35.3A (Tc) | 10V | 4V @ 1mA | 12.1nC @ 10V | 693pF @ 25V | ±20V | - | 59.4W (Tc) | 25 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 40V 75A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 105W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock6,576 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 36.3nC @ 10V | 2040pF @ 25V | ±20V | - | 105W (Tc) | 8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 20V 1A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 560mW (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock43,200 |
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MOSFET (Metal Oxide) | 20V | 1A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 0.72nC @ 4.5V | 34pF @ 20V | ±12V | - | 560mW (Tc) | 350 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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NXP |
MOSFET N-CH 30V 0.84A SOT416
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 530mW (Tc)
- Rds On (Max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock2,960 |
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MOSFET (Metal Oxide) | 30V | 840mA (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 0.65nC @ 4.5V | 37pF @ 25V | ±12V | - | 530mW (Tc) | 440 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 20V 0.98A SOT416
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 530mW (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75
- Package / Case: SC-75, SOT-416
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Package: SC-75, SOT-416 |
Stock7,392 |
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MOSFET (Metal Oxide) | 20V | 980mA (Tc) | 1.8V, 4.5V | 1V @ 250µA | 0.89nC @ 4.5V | 45pF @ 20V | ±8V | - | 530mW (Tc) | 340 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 25V 100A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3504pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 141W (Tc)
- Rds On (Max) @ Id, Vgs: 2.05 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock4,992 |
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MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 57nC @ 10V | 3504pF @ 12V | ±20V | - | 141W (Tc) | 2.05 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 75V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,872 |
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MOSFET (Metal Oxide) | 75V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 177nC @ 10V | 11400pF @ 25V | ±16V | - | 263W (Tc) | 5.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 55V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 204W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,232 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 124nC @ 10V | 7750pF @ 25V | ±16V | - | 204W (Tc) | 5.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 75V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,712 |
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MOSFET (Metal Oxide) | 75V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 234nC @ 10V | 15450pF @ 25V | ±16V | - | 306W (Tc) | 4.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 30V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,312 |
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MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 78nC @ 10V | 4707pF @ 25V | ±16V | - | 158W (Tc) | 3.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 55V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 191nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11516pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,952 |
|
MOSFET (Metal Oxide) | 55V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 191nC @ 10V | 11516pF @ 25V | ±16V | - | 263W (Tc) | 3.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 40V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 204W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,576 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 125nC @ 10V | 8020pF @ 25V | ±16V | - | 204W (Tc) | 3.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 55V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15300pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,128 |
|
MOSFET (Metal Oxide) | 55V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 258nC @ 10V | 15300pF @ 25V | ±16V | - | 306W (Tc) | 3.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 75V 77A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5251pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,064 |
|
MOSFET (Metal Oxide) | 75V | 77A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 81nC @ 10V | 5251pF @ 25V | ±16V | - | 158W (Tc) | 10.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 55V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,496 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 82nC @ 10V | 5160pF @ 25V | ±16V | - | 158W (Tc) | 7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4824pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 254W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,632 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 69nC @ 10V | 4824pF @ 25V | ±20V | - | 254W (Tc) | 4.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 100A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10349pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 333W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,944 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 4V @ 1mA | 150nC @ 10V | 10349pF @ 25V | ±20V | - | 333W (Tc) | 1.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 100V 64A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,864 |
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MOSFET (Metal Oxide) | 100V | 64A (Tc) | 10V | 4V @ 1mA | 53nC @ 10V | 3400pF @ 25V | ±20V | - | 200W (Tc) | 19 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V QFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1316pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock7,696 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 24nC @ 10V | 1316pF @ 15V | ±20V | - | 55W (Tc) | 5.8 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 30V QFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2061pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock7,280 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 37nC @ 10V | 2061pF @ 15V | ±20V | - | 71W (Tc) | 3.6 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH QFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock2,992 |
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MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 4V @ 1mA | 23nC @ 10V | 1350pF @ 50V | ±20V | - | 65W (Tc) | 32 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH QFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock6,208 |
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MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 10nC @ 10V | 526pF @ 15V | ±20V | - | 37W (Tc) | 17 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 75V 21.4A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 803pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Rds On (Max) @ Id, Vgs: 54 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock4,832 |
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MOSFET (Metal Oxide) | 75V | 21.4A (Tc) | 10V | 4V @ 1mA | 12nC @ 10V | 803pF @ 25V | ±20V | - | 59W (Tc) | 54 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 55V 28.43A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 28.43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 781pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock2,816 |
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MOSFET (Metal Oxide) | 55V | 28.43A (Tc) | 10V | 4V @ 1mA | 13.1nC @ 10V | 781pF @ 25V | ±20V | - | 60W (Tc) | 35 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 60V QFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock6,864 |
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MOSFET (Metal Oxide) | 60V | 40A (Tc) | 10V | 4V @ 1mA | 19.6nC @ 10V | 1264pF @ 30V | ±20V | - | 65W (Tc) | 14 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 30V QFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 768pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock2,576 |
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MOSFET (Metal Oxide) | 30V | 21A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 12.2nC @ 10V | 768pF @ 15V | ±20V | - | 41W (Tc) | 13 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 60V 0.3A SOT-883
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock7,616 |
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MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | - | - | - | ±20V | - | 250mW (Ta) | - | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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