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NXP |
MOSFET N-CH 55V 5.5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,448 |
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MOSFET (Metal Oxide) | 55V | 5.5A (Tc) | 10V | 4V @ 1mA | - | 230pF @ 25V | ±20V | - | 8W (Tc) | 150 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 55V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 0V
- Input Capacitance (Ciss) (Max) @ Vds: 3271pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 211W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,840 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 62nC @ 0V | 3271pF @ 25V | ±20V | - | 211W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,144 |
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MOSFET (Metal Oxide) | 30V | 120A (Tc) | 5V, 10V | 2.1V @ 1mA | 113nC @ 5V | 16150pF @ 25V | ±10V | - | 357W (Tc) | 1.4 mOhm @ 25A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,568 |
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MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | ±20V | - | 357W (Tc) | 1.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 25V 33A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock6,288 |
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MOSFET (Metal Oxide) | 25V | 33A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 528pF @ 12V | ±20V | - | 26W (Tc) | 12.6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 25V 39A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 678pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock7,328 |
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MOSFET (Metal Oxide) | 25V | 39A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 11nC @ 10V | 678pF @ 12V | ±20V | - | 30W (Tc) | 10.6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 100V 44.2A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 44.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 81.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4454pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52.6W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,864 |
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MOSFET (Metal Oxide) | 100V | 44.2A (Tc) | 10V | 4V @ 1mA | 81.5nC @ 10V | 4454pF @ 50V | ±20V | - | 52.6W (Tc) | 9.6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH 100V 55A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6686pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57.7W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock2,288 |
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MOSFET (Metal Oxide) | 100V | 55A (Tc) | 10V | 4V @ 1mA | 121nC @ 10V | 6686pF @ 50V | ±20V | - | 57.7W (Tc) | 6.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH 100V 61.8A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock2,208 |
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MOSFET (Metal Oxide) | 100V | 61.8A (Tc) | 10V | 4V @ 1mA | 145nC @ 10V | 8061pF @ 50V | ±20V | - | 60W (Tc) | 5.6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH 100V 67.5A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 67.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63.8W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 15A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,856 |
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MOSFET (Metal Oxide) | 100V | 67.5A (Tc) | 10V | 4V @ 1mA | 153nC @ 10V | 9900pF @ 50V | ±20V | - | 63.8W (Tc) | 5 mOhm @ 15A, 10V | - | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH 100V 32.1A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 32.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 46.1W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock3,776 |
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MOSFET (Metal Oxide) | 100V | 32.1A (Tc) | 10V | 4V @ 1mA | 46.2nC @ 10V | 2404pF @ 50V | ±20V | - | 46.1W (Tc) | 16 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH 100V 35.2A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 35.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 57.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3195pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48.4W (Tc)
- Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock7,632 |
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MOSFET (Metal Oxide) | 100V | 35.2A (Tc) | 10V | 4V @ 1mA | 57.5nC @ 10V | 3195pF @ 50V | ±20V | - | 48.4W (Tc) | 13.9 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH 30V 6A SC-73
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock7,232 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 11nC @ 10V | 492pF @ 15V | ±20V | - | 820mW (Ta), 8.33W (Tc) | 29 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 30V 5.1A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 334pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock76,800 |
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MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 334pF @ 15V | ±20V | - | 500mW (Ta) | 31 mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 30V 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 545mW (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock2,100 |
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MOSFET (Metal Oxide) | 30V | 6.7A (Tj) | 4.5V, 10V | 2.5V @ 250µA | 18.6nC @ 10V | 630pF @ 15V | ±20V | - | 545mW (Ta) | 20 mOhm @ 6.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 100V 7A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 8W (Tc)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock6,768 |
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MOSFET (Metal Oxide) | 100V | 7A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 1690pF @ 25V | ±10V | - | 8W (Tc) | 72 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 25V 46A LL LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock7,776 |
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MOSFET (Metal Oxide) | 25V | 46A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 12nC @ 10V | 694pF @ 12V | ±20V | - | 34W (Tc) | 9.1 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 30V 54A LL LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 848pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock3,200 |
|
MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 15nC @ 10V | 848pF @ 15V | ±20V | - | 42W (Tc) | 7.9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 25V 56A LL LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 921pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock5,856 |
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MOSFET (Metal Oxide) | 25V | 56A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 15nC @ 10V | 921pF @ 12V | ±20V | - | 42W (Tc) | 7.4 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 20V 5.8A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 510mW (Ta)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock148,080 |
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MOSFET (Metal Oxide) | 20V | 5.8A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | ±8V | - | 510mW (Ta) | 18 mOhm @ 5.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 30V 4.6A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock3,424 |
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MOSFET (Metal Oxide) | 30V | 4.6A (Tc) | 4.5V, 10V | 2V @ 1mA | 8.8nC @ 4.5V | 350pF @ 30V | ±20V | - | 1.75W (Tc) | 47 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 30V 5.4A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock6,048 |
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MOSFET (Metal Oxide) | 30V | 5.4A (Tc) | 4.5V, 10V | 2V @ 1mA | 6.1nC @ 4.5V | 495pF @ 25V | ±20V | - | 1.75W (Tc) | 38 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 30V 5.4A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock6,256 |
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MOSFET (Metal Oxide) | 30V | 5.4A (Tc) | 4.5V, 10V | 2V @ 1mA | 13.8nC @ 10V | 555pF @ 25V | ±15V | - | 1.75W (Tc) | 38 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 55V 2.5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±13V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,832 |
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MOSFET (Metal Oxide) | 55V | 2.5A (Ta) | 5V | 2V @ 1mA | 4.5nC @ 5V | 330pF @ 25V | ±13V | - | 1.8W (Ta), 8.3W (Tc) | 150 mOhm @ 5A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 20V 0.97A SOT416
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 530mW (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75
- Package / Case: SC-75, SOT-416
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Package: SC-75, SOT-416 |
Stock2,384 |
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MOSFET (Metal Oxide) | 20V | 970mA (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 0.72nC @ 4.5V | 34pF @ 20V | ±12V | - | 530mW (Tc) | 350 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 30V 0.8A SOT416
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 530mW (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75
- Package / Case: SC-75, SOT-416
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Package: SC-75, SOT-416 |
Stock161,400 |
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MOSFET (Metal Oxide) | 30V | 800mA (Tc) | 1.8V, 4.5V | 1V @ 250µA | 0.89nC @ 4.5V | 43pF @ 25V | ±8V | - | 530mW (Tc) | 480 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 30V 62A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1005pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock3,440 |
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MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 18.3nC @ 10V | 1005pF @ 15V | ±20V | - | 56W (Tc) | 8.3 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 30V 78A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1226pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock4,224 |
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MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 21.3nC @ 10V | 1226pF @ 15V | ±20V | - | 63W (Tc) | 6.1 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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