Page 2 - NXP Products - Transistors - FETs, MOSFETs - Single

BUK9E3R2-40B,127
NXP

MOSFET N-CH 40V 100A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,392
PH4330L,115
NXP

MOSFET N-CH 30V 95.9A LFPAK

Package: SC-100, SOT-669

Stock2,080
PH6030L,115
NXP

MOSFET N-CH 30V 76.7A LFPAK

Package: SC-100, SOT-669

Stock2,432
BUK752R3-40C,127
NXP

MOSFET N-CH 40V 100A TO220AB

Package: TO-220-3

Stock4,560
PSMN1R7-25YLC,115
NXP

MOSFET N-CH 25V 100A LFPAK

Package: SC-100, SOT-669

Stock6,944
PMF780SN,115
NXP

MOSFET N-CH 60V 570MA SOT323

Package: SC-70, SOT-323

Stock3,952
PHD3055E,118
NXP

MOSFET N-CH 60V 10.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,328
BUK7880-55,135
NXP

MOSFET N-CH 55V 3.5A SOT223

Package: TO-261-4, TO-261AA

Stock4,608
BUK6207-30C,118
NXP

MOSFET N-CH 30V 90A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,400
PHT4NQ10LT,135
NXP

MOSFET N-CH 100V 3.5A SC73

Package: TO-261-4, TO-261AA

Stock2,640
BUK95150-55A,127
NXP

MOSFET N-CH 55V 13A TO220AB

Package: TO-220-3

Stock4,336
PH6530AL,115
NXP

MOSFET N-CH 30V LFPAK

Package: SC-100, SOT-669

Stock2,256
BUK9832-55A,115
NXP

MOSFET N-CH 55V 12A SOT223

Package: TO-261-4, TO-261AA

Stock5,776
BUK654R8-40C,127
NXP

MOSFET N-CH 40V 100A TO220AB

Package: TO-220-3

Stock5,840
PMF280UN,115
NXP

MOSFET N-CH 20V 1.02A SOT323

Package: SC-70, SOT-323

Stock252,000
PMV56XN,215
NXP

MOSFET N-CH 20V 3.76A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock142,800
BUK6208-40C,118
NXP

MOSFET N-CH 40V 90A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,032
BUK7504-40A,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock2,704
BUK7506-55B,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock3,216
BUK9505-30A,127
NXP

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock2,608

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK9E3R2-40B,127	NXP	MOSFET N-CH 40V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,392	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2V @ 1mA	94nC @ 5V	10502pF @ 25V	±15V	-	300W (Tc)	2.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
PH4330L,115	NXP	MOSFET N-CH 30V 95.9A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 95.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,080	MOSFET (Metal Oxide)	30V	95.9A (Tc)	4.5V, 10V	2.5V @ 1mA	22.9nC @ 4.5V	2786pF @ 12V	±20V	-	62.5W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PH6030L,115	NXP	MOSFET N-CH 30V 76.7A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,432	MOSFET (Metal Oxide)	30V	76.7A (Tc)	4.5V, 10V	2.15V @ 1mA	15.2nC @ 4.5V	2260pF @ 12V	±20V	-	62.5W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK752R3-40C,127	NXP	MOSFET N-CH 40V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11323pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,560	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 1mA	175nC @ 10V	11323pF @ 25V	±20V	-	333W (Tc)	2.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN1R7-25YLC,115	NXP	MOSFET N-CH 25V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3735pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,944	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	59nC @ 10V	3735pF @ 12V	±20V	-	164W (Tc)	1.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PMF780SN,115	NXP	MOSFET N-CH 60V 570MA SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 570mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560mW (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,952	MOSFET (Metal Oxide)	60V	570mA (Ta)	10V	2V @ 250µA	1.05nC @ 10V	23pF @ 30V	±20V	-	560mW (Tc)	920 mOhm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
PHD3055E,118	NXP	MOSFET N-CH 60V 10.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,328	MOSFET (Metal Oxide)	60V	10.3A (Tc)	10V	4V @ 1mA	5.8nC @ 10V	250pF @ 25V	±20V	-	33W (Tc)	150 mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7880-55,135	NXP	MOSFET N-CH 55V 3.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,608	MOSFET (Metal Oxide)	55V	3.5A (Ta)	10V	4V @ 1mA	-	500pF @ 25V	±16V	-	1.8W (Ta)	80 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK6207-30C,118	NXP	MOSFET N-CH 30V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,400	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2.8V @ 1mA	54.8nC @ 10V	3470pF @ 25V	±16V	-	128W (Tc)	5.2 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHT4NQ10LT,135	NXP	MOSFET N-CH 100V 3.5A SC73 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 374pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 6.9W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.75A, 5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,640	MOSFET (Metal Oxide)	100V	3.5A (Tc)	5V	2V @ 1mA	12.2nC @ 5V	374pF @ 25V	±16V	-	6.9W (Tc)	250 mOhm @ 1.75A, 5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK95150-55A,127	NXP	MOSFET N-CH 55V 13A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 339pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 137 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,336	MOSFET (Metal Oxide)	55V	13A (Tc)	4.5V, 10V	2V @ 1mA	-	339pF @ 25V	±10V	-	53W (Tc)	137 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PH6530AL,115	NXP	MOSFET N-CH 30V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,256	MOSFET (Metal Oxide)	30V	-	-	-	-	-	-	-	-	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK9832-55A,115	NXP	MOSFET N-CH 55V 12A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,776	MOSFET (Metal Oxide)	55V	12A (Tc)	4.5V, 10V	2V @ 1mA	-	1594pF @ 25V	±10V	-	8W (Tc)	29 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK654R8-40C,127	NXP	MOSFET N-CH 40V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,840	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2.8V @ 1mA	88nC @ 10V	5200pF @ 25V	±16V	-	158W (Tc)	4.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PMF280UN,115	NXP	MOSFET N-CH 20V 1.02A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 560mW (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock252,000	MOSFET (Metal Oxide)	20V	1.02A (Tc)	1.8V, 4.5V	1V @ 250µA	0.89nC @ 4.5V	45pF @ 20V	±8V	-	560mW (Tc)	340 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
PMV56XN,215	NXP	MOSFET N-CH 20V 3.76A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 650mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.92W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock142,800	MOSFET (Metal Oxide)	20V	3.76A (Tc)	2.5V, 4.5V	650mV @ 1mA	5.4nC @ 4.5V	230pF @ 10V	±8V	-	1.92W (Tc)	85 mOhm @ 3.6A, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
BUK6208-40C,118	NXP	MOSFET N-CH 40V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,032	MOSFET (Metal Oxide)	40V	90A (Tc)	4.5V, 10V	2.8V @ 1mA	67nC @ 10V	3720pF @ 25V	±16V	-	128W (Tc)	6.2 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7504-40A,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,704	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	117nC @ 10V	5730pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK7506-55B,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,216	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	64nC @ 10V	5100pF @ 25V	±20V	-	254W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9505-30A,127	NXP	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,608	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	2V @ 1mA	-	8600pF @ 25V	±10V	-	230W (Tc)	4.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9509-75A,127	NXP	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,800	MOSFET (Metal Oxide)	75V	75A (Tj)	4.5V, 10V	2V @ 1mA	-	8840pF @ 25V	±10V	-	230W (Tc)	8.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9510-55A,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4307pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,472	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	68nC @ 5V	4307pF @ 25V	±15V	-	200W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PMN27UN,135	NXP	MOSFET N-CH 20V 5.7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock2,768	MOSFET (Metal Oxide)	20V	5.7A (Tc)	1.8V, 4.5V	700mV @ 1mA	10.6nC @ 4.5V	740pF @ 10V	±8V	-	1.75W (Tc)	34 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PMN34LN,135	NXP	MOSFET N-CH 20V 5.7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 20V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock7,136	MOSFET (Metal Oxide)	20V	5.7A (Tc)	4.5V, 10V	2V @ 1mA	13.1nC @ 10V	500pF @ 20V	±15V	-	1.75W (Tc)	34 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PMN55LN,135	NXP	MOSFET N-CH 20V 4.1A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 20V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock3,968	MOSFET (Metal Oxide)	20V	4.1A (Tc)	4.5V, 10V	2V @ 1mA	13.1nC @ 10V	500pF @ 20V	±15V	-	1.75W (Tc)	65 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
BUK652R7-30C,127	NXP	MOSFET N-CH 30V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,456	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.8V @ 1mA	114nC @ 10V	6960pF @ 25V	±16V	-	204W (Tc)	3.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHK28NQ03LT,518	NXP	MOSFET N-CH 30V 23.7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,280	MOSFET (Metal Oxide)	30V	23.7A (Tc)	4.5V, 10V	2V @ 1mA	30.3nC @ 4.5V	2800pF @ 20V	±20V	-	6.25W (Tc)	6.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PH3330L,115	NXP	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,392	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.15V @ 1mA	30.5nC @ 4.5V	4840pF @ 12V	±20V	-	62.5W (Tc)	3.3 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669