Page 3 - NXP Products - Transistors - FETs, MOSFETs - Single

BUK9618-55A,118
NXP

MOSFET N-CH 55V 61A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
BUK9623-75A,118
NXP

MOSFET N-CH 75V 53A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,944
BUK9E04-30B,127
NXP

MOSFET N-CH 30V 75A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,368
PH4025L,115
NXP

MOSFET N-CH 25V 99A LFPAK

Package: SC-100, SOT-669

Stock2,320
PH5525L,115
NXP

MOSFET N-CH 25V 81.7A LFPAK

Package: SC-100, SOT-669

Stock3,264
PH9930L,115
NXP

MOSFET N-CH 30V 63A LFPAK

Package: SC-100, SOT-669

Stock5,744
PSMN008-75P,127
NXP

MOSFET N-CH 75V 75A TO220AB

Package: TO-220-3

Stock2,192
PSMN023-80LS,115
NXP

MOSFET N-CH 80V 34A QFN3333

Package: 8-VDFN Exposed Pad

Stock5,456
PSMN3R8-30LL,115
NXP

MOSFET N-CH 30V QFN3333

Package: 8-VDFN Exposed Pad

Stock2,224
BUK6240-75C,118
NXP

MOSFET N-CH 75V 22A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,896
PHT6N06T,135
NXP

MOSFET N-CH 55V 5.5A SOT223

Package: TO-261-4, TO-261AA

Stock5,536
PMV117EN,215
NXP

MOSFET N-CH 30V 2.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock142,800
2N7002BKT,115
NXP

MOSFET N-CH 60V 290MA SOT416

Package: SC-75, SOT-416

Stock2,556,000
PSMN7R0-40LS,115
NXP

MOSFET N-CH 40V QFN3333

Package: 8-VDFN Exposed Pad

Stock3,376
BUK7614-55A,118
NXP

MOSFET N-CH 55V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,352
PSMN9R0-30LL,115
NXP

MOSFET N-CH 30V QFN3333

Package: 8-VDFN Exposed Pad

Stock6,576
BUK754R3-75C,127
NXP

MOSFET N-CH 75V 100A TO220AB-3

Package: TO-220-3

Stock3,296
PMFPB6532UP,115
NXP

MOSFET P-CH 20V 3.5A SOT1118

Package: 6-UDFN Exposed Pad

Stock36,000
PMFPB6545UP,115
NXP

MOSFET P-CH 20V 3.5A SOT1118

Package: 6-UDFN Exposed Pad

Stock5,152
BUK98150-55A,135
NXP

MOSFET N-CH 55V 5.5A SOT-223

Package: TO-261-4, TO-261AA

Stock5,216

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK9618-55A,118	NXP	MOSFET N-CH 55V 61A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640	MOSFET (Metal Oxide)	55V	61A (Tc)	4.5V, 10V	2V @ 1mA	34nC @ 5V	2210pF @ 25V	±15V	-	136W (Tc)	16 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9623-75A,118	NXP	MOSFET N-CH 75V 53A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,944	MOSFET (Metal Oxide)	75V	53A (Tc)	4.5V, 10V	2V @ 1mA	-	3120pF @ 25V	±10V	-	138W (Tc)	22 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9E04-30B,127	NXP	MOSFET N-CH 30V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6526pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,368	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	2V @ 1mA	56nC @ 5V	6526pF @ 25V	±15V	-	254W (Tc)	3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
PH4025L,115	NXP	MOSFET N-CH 25V 99A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2601pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46.4W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,320	MOSFET (Metal Oxide)	25V	99A (Tc)	4.5V, 10V	2.15V @ 1mA	21.3nC @ 4.5V	2601pF @ 12V	±20V	-	46.4W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PH5525L,115	NXP	MOSFET N-CH 25V 81.7A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 81.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,264	MOSFET (Metal Oxide)	25V	81.7A (Tc)	4.5V, 10V	2.15V @ 1mA	16.6nC @ 4.5V	2150pF @ 12V	±20V	-	62.5W (Tc)	5.5 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PH9930L,115	NXP	MOSFET N-CH 30V 63A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1565pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,744	MOSFET (Metal Oxide)	30V	63A (Tc)	4.5V, 10V	2.15V @ 1mA	13.3nC @ 4.5V	1565pF @ 12V	±20V	-	62.5W (Tc)	9.9 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PSMN008-75P,127	NXP	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,192	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 1mA	122.8nC @ 10V	5260pF @ 25V	±20V	-	230W (Tc)	8.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN023-80LS,115	NXP	MOSFET N-CH 80V 34A QFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock5,456	MOSFET (Metal Oxide)	80V	34A (Tc)	10V	4V @ 1mA	21nC @ 10V	1295pF @ 40V	±20V	-	65W (Tc)	23 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
PSMN3R8-30LL,115	NXP	MOSFET N-CH 30V QFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock2,224	MOSFET (Metal Oxide)	30V	40A (Tc)	10V	2.15V @ 1mA	38nC @ 10V	2085pF @ 15V	±20V	-	69W (Tc)	3.7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
BUK6240-75C,118	NXP	MOSFET N-CH 75V 22A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,896	MOSFET (Metal Oxide)	75V	22A (Tc)	4.5V, 10V	2.8V @ 1mA	21.4nC @ 10V	1280pF @ 25V	±16V	-	60W (Tc)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHT6N06T,135	NXP	MOSFET N-CH 55V 5.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,536	MOSFET (Metal Oxide)	55V	5.5A (Tc)	10V	4V @ 1mA	5.6nC @ 10V	175pF @ 25V	±20V	-	8.3W (Tc)	150 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PMV117EN,215	NXP	MOSFET N-CH 30V 2.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 147pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock142,800	MOSFET (Metal Oxide)	30V	2.5A (Tc)	4.5V, 10V	2V @ 1mA	4.6nC @ 10V	147pF @ 10V	±20V	-	830mW (Tc)	117 mOhm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
2N7002BKT,115	NXP	MOSFET N-CH 60V 290MA SOT416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 290mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock2,556,000	MOSFET (Metal Oxide)	60V	290mA (Ta)	5V, 10V	2.1V @ 250µA	0.6nC @ 4.5V	50pF @ 10V	±20V	-	260mW (Ta)	1.6 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
PSMN7R0-40LS,115	NXP	MOSFET N-CH 40V QFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock3,376	MOSFET (Metal Oxide)	40V	40A (Tc)	10V	4V @ 1mA	21.4nC @ 10V	1286pF @ 12V	±20V	-	65W (Tc)	7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
BUK7614-55A,118	NXP	MOSFET N-CH 55V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2464pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,352	MOSFET (Metal Oxide)	55V	73A (Tc)	10V	4V @ 1mA	-	2464pF @ 25V	±20V	-	166W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN9R0-30LL,115	NXP	MOSFET N-CH 30V QFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1193pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock6,576	MOSFET (Metal Oxide)	30V	21A (Tc)	4.5V, 10V	2.15V @ 1mA	20.6nC @ 10V	1193pF @ 15V	±20V	-	50W (Tc)	9 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
BUK754R3-75C,127	NXP	MOSFET N-CH 75V 100A TO220AB-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11659pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,296	MOSFET (Metal Oxide)	75V	100A (Tc)	10V	4V @ 1mA	142nC @ 10V	11659pF @ 25V	±20V	-	333W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PMFPB6532UP,115	NXP	MOSFET P-CH 20V 3.5A SOT1118 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 520mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6 Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock36,000	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.8V, 4.5V	1V @ 250µA	6nC @ 4.5V	380pF @ 10V	±8V	Schottky Diode (Isolated)	520mW (Ta), 8.3W (Tc)	70 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	DFN2020-6	6-UDFN Exposed Pad
PMFPB6545UP,115	NXP	MOSFET P-CH 20V 3.5A SOT1118 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 520mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6 Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,152	MOSFET (Metal Oxide)	20V	3.5A (Ta)	1.8V, 4.5V	1V @ 250µA	6nC @ 4.5V	380pF @ 10V	±8V	Schottky Diode (Isolated)	520mW (Ta), 8.3W (Tc)	70 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020-6	6-UDFN Exposed Pad
BUK98150-55A,135	NXP	MOSFET N-CH 55V 5.5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 137 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,216	MOSFET (Metal Oxide)	55V	5.5A (Tc)	4.5V, 10V	2V @ 1mA	5.3nC @ 5V	320pF @ 25V	±15V	-	8W (Tc)	137 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PMV20XN,215	NXP	MOSFET N-CH 30V 4.8A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 510mW (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock138,720	MOSFET (Metal Oxide)	30V	4.8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10nC @ 4.5V	585pF @ 15V	±12V	-	510mW (Ta)	25 mOhm @ 4.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PMV22EN,215	NXP	MOSFET N-CH 30V 5.2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 510mW (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock163,800	MOSFET (Metal Oxide)	30V	5.2A (Ta)	4.5V, 10V	2.5V @ 250µA	13nC @ 10V	480pF @ 15V	±20V	-	510mW (Ta)	22 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PSMN3R2-25YLC,115	NXP	MOSFET N-CH 25V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,720	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	30nC @ 10V	1781pF @ 12V	±20V	-	79W (Tc)	3.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PSMN3R7-25YLC,115	NXP	MOSFET N-CH 25V 97A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,584	MOSFET (Metal Oxide)	25V	97A (Tc)	4.5V, 10V	1.95V @ 1mA	21.6nC @ 10V	1585pF @ 12V	±20V	-	64W (Tc)	3.9 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PSMN3R7-30YLC,115	NXP	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1848pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 3.95 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,328	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	29nC @ 10V	1848pF @ 15V	±20V	-	79W (Tc)	3.95 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PMN25EN,115	NXP	MOSFET N-CH 30V 6.2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock142,200	MOSFET (Metal Oxide)	30V	6.2A (Ta)	4.5V, 10V	2.5V @ 250µA	11nC @ 10V	492pF @ 15V	±20V	-	540mW (Ta), 6.25W (Tc)	23 mOhm @ 6.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
BUK7510-55AL,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,104	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	124nC @ 10V	6280pF @ 25V	±20V	-	300W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9610-55A,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4307pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,032	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	68nC @ 5V	4307pF @ 25V	±15V	-	200W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB