Page 4 - NXP Products - Transistors - FETs, MOSFETs - Single

PSMN005-55B,118
NXP

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,488
BUK7506-75B,127
NXP

MOSFET N-CH 75V 75A TO220AB

Package: TO-220-3

Stock3,408
PHB222NQ04LT,118
NXP

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,576
PH4830L,115
NXP

MOSFET N-CH 30V 84A LFPAK

Package: SC-100, SOT-669

Stock5,104
PMV40UN,215
NXP

MOSFET N-CH 30V 4.9A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,288
PH1955L,115
NXP

MOSFET N-CH 55V 40A LFPAK

Package: SC-100, SOT-669

Stock2,352
SI2302DS,215
NXP

MOSFET N-CH 20V 2.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,992
PH7030L,115
NXP

MOSFET N-CH 30V 68A LFPAK

Package: SC-100, SOT-669

Stock2,560
BSH205,215
NXP

MOSFET P-CH 12V 0.75A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,032
PMV45EN,215
NXP

MOSFET N-CH 30V 5.4A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,976
PMF3800SN,115
NXP

MOSFET N-CH 60V 260MA SOT323

Package: SC-70, SOT-323

Stock42,600
BUK9524-55A,127
NXP

MOSFET N-CH 55V 46A TO220AB

Package: TO-220-3

Stock6,624
PH4530L,115
NXP

MOSFET N-CH 30V 80A LFPAK

Package: SC-100, SOT-669

Stock3,968
PHB146NQ06LT,118
NXP

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,936
PSMN050-80PS,127
NXP

MOSFET N-CH 80V 22A TO220AB

Package: TO-220-3

Stock4,864
PSMN9R0-30YL,115
NXP

MOSFET N-CH 30V 61A LFPAK

Package: SC-100, SOT-669

Stock36,000
PH3830L,115
NXP

MOSFET N-CH 30V 98A LFPAK

Package: SC-100, SOT-669

Stock6,784
PHD36N03LT,118
NXP

MOSFET N-CH 30V 43.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock19,392
BSH112,235
NXP

MOSFET N-CH 60V 300MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,320
2N7002PT,115
NXP

MOSFET N-CH 60V 0.31A SOT-416

Package: SC-75, SOT-416

Stock4,032

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PSMN005-55B,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,488	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	103nC @ 5V	6500pF @ 25V	±15V	-	230W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7506-75B,127	NXP	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7446pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,408	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 1mA	91nC @ 10V	7446pF @ 25V	±20V	-	300W (Tc)	5.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHB222NQ04LT,118	NXP	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 93.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7880pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,576	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2V @ 1mA	93.6nC @ 5V	7880pF @ 25V	±15V	-	300W (Tc)	2.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PH4830L,115	NXP	MOSFET N-CH 30V 84A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,104	MOSFET (Metal Oxide)	30V	84A (Tc)	4.5V, 10V	2.15V @ 1mA	22.9nC @ 4.5V	2786pF @ 12V	±20V	-	62.5W (Tc)	4.8 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PMV40UN,215	NXP	MOSFET N-CH 30V 4.9A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 30V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,288	MOSFET (Metal Oxide)	30V	4.9A (Tc)	1.8V, 4.5V	700mV @ 1mA	9.3nC @ 4.5V	445pF @ 30V	±8V	-	1.9W (Tc)	47 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PH1955L,115	NXP	MOSFET N-CH 55V 40A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1992pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 17.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,352	MOSFET (Metal Oxide)	55V	40A (Tc)	4.5V, 10V	2V @ 1mA	18nC @ 5V	1992pF @ 25V	±15V	-	75W (Tc)	17.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SI2302DS,215	NXP	MOSFET N-CH 20V 2.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 650mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,992	MOSFET (Metal Oxide)	20V	2.5A (Tc)	2.5V, 4.5V	650mV @ 1mA	10nC @ 4.5V	230pF @ 10V	±8V	-	830mW (Tc)	85 mOhm @ 3.6A, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PH7030L,115	NXP	MOSFET N-CH 30V 68A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,560	MOSFET (Metal Oxide)	30V	68A (Tc)	4.5V, 10V	2V @ 1mA	12nC @ 5V	1362pF @ 10V	±20V	-	62.5W (Tc)	7.9 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BSH205,215	NXP	MOSFET P-CH 12V 0.75A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 680mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 9.6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 417mW (Ta) Rds On (Max) @ Id, Vgs: 400 mOhm @ 430mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,032	MOSFET (Metal Oxide)	12V	750mA (Ta)	1.8V, 4.5V	680mV @ 1mA	3.8nC @ 4.5V	200pF @ 9.6V	±8V	-	417mW (Ta)	400 mOhm @ 430mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PMV45EN,215	NXP	MOSFET N-CH 30V 5.4A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280mW (Tj) Rds On (Max) @ Id, Vgs: 42 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,976	MOSFET (Metal Oxide)	30V	5.4A (Tc)	4.5V, 10V	2V @ 1mA	9.4nC @ 10V	350pF @ 30V	±20V	-	280mW (Tj)	42 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PMF3800SN,115	NXP	MOSFET N-CH 60V 260MA SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 560mW (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock42,600	MOSFET (Metal Oxide)	60V	260mA (Ta)	4.5V, 10V	3.3V @ 1mA	0.85nC @ 10V	40pF @ 10V	±15V	-	560mW (Tc)	4.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
BUK9524-55A,127	NXP	MOSFET N-CH 55V 46A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,624	MOSFET (Metal Oxide)	55V	46A (Tc)	4.5V, 10V	2V @ 1mA	-	1815pF @ 25V	±10V	-	105W (Tc)	21.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PH4530L,115	NXP	MOSFET N-CH 30V 80A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,968	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	2V @ 1mA	23.5nC @ 5V	1972pF @ 10V	±20V	-	62.5W (Tc)	5.7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PHB146NQ06LT,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,936	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	60nC @ 5V	5675pF @ 25V	±15V	-	250W (Tc)	5.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN050-80PS,127	NXP	MOSFET N-CH 80V 22A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,864	MOSFET (Metal Oxide)	80V	22A (Tc)	10V	4V @ 1mA	11nC @ 10V	633pF @ 12V	±20V	-	56W (Tc)	51 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN9R0-30YL,115	NXP	MOSFET N-CH 30V 61A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock36,000	MOSFET (Metal Oxide)	30V	61A (Tc)	4.5V, 10V	2.15V @ 1mA	17.8nC @ 10V	1006pF @ 12V	±20V	-	46W (Tc)	8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PH3830L,115	NXP	MOSFET N-CH 30V 98A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3190pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,784	MOSFET (Metal Oxide)	30V	98A (Tc)	5V, 10V	2V @ 1mA	33nC @ 5V	3190pF @ 10V	±20V	-	62.5W (Tc)	3.8 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PHD36N03LT,118	NXP	MOSFET N-CH 30V 43.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57.6W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock19,392	MOSFET (Metal Oxide)	30V	43.4A (Tc)	4.5V, 10V	2V @ 250µA	18.5nC @ 10V	690pF @ 25V	±20V	-	57.6W (Tc)	17 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BSH112,235	NXP	MOSFET N-CH 60V 300MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,320	MOSFET (Metal Oxide)	60V	300mA (Ta)	4.5V, 10V	2V @ 1mA	-	40pF @ 10V	±15V	-	830mW (Tc)	5 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
2N7002PT,115	NXP	MOSFET N-CH 60V 0.31A SOT-416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock4,032	MOSFET (Metal Oxide)	60V	310mA (Ta)	5V, 10V	2.4V @ 250µA	0.8nC @ 4.5V	50pF @ 10V	±20V	-	250mW (Ta)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
PHT8N06LT,135	NXP	MOSFET N-CH 55V 3.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±13V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,440	MOSFET (Metal Oxide)	55V	3.5A (Ta)	5V	2V @ 1mA	11.2nC @ 5V	650pF @ 25V	±13V	-	1.8W (Ta), 8.3W (Tc)	80 mOhm @ 5A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK9880-55A,115	NXP	MOSFET N-CH 55V 7A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,864	MOSFET (Metal Oxide)	55V	7A (Tc)	4.5V, 10V	2V @ 1mA	11nC @ 5V	584pF @ 25V	±15V	-	8W (Tc)	73 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK7E07-55B,127	NXP	MOSFET N-CH 55V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 203W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,424	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	53nC @ 10V	3760pF @ 25V	±20V	-	203W (Tc)	7.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
PH9030AL,115	NXP	MOSFET N-CH 30V 61A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock185,004	MOSFET (Metal Oxide)	30V	61A (Tc)	-	2.15V @ 1mA	17.8nC @ 10V	1006pF @ 12V	-	-	-	8 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PMN34UN,135	NXP	MOSFET N-CH 30V 4.9A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock4,352	MOSFET (Metal Oxide)	30V	4.9A (Tc)	1.8V, 4.5V	700mV @ 1mA	9.9nC @ 4.5V	790pF @ 25V	±8V	-	1.75W (Tc)	46 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
SI4410DY,518	NXP	MOSFET N-CH 30V SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,160	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1V @ 250µA	34nC @ 5V	-	±20V	-	2.5W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK753R1-40B,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,360	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	94nC @ 10V	6808pF @ 25V	±20V	-	300W (Tc)	3.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9506-55B,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 258W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,936	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	60nC @ 5V	7565pF @ 25V	±15V	-	258W (Tc)	5.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3