Page 8 - NXP Products - Transistors - FETs, MOSFETs - Single

PHU11NQ10T,127
NXP

MOSFET N-CH 100V 10.9A SOT533

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,448
PHU108NQ03LT,127
NXP

MOSFET N-CH 25V 75A SOT533

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,192
PHU101NQ03LT,127
NXP

MOSFET N-CH 30V 75A SOT533

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,752
PHT2NQ10T,135
NXP

MOSFET N-CH 100V 2.5A SOT223

Package: TO-261-4, TO-261AA

Stock2,992
PHP83N03LT,127
NXP

MOSFET N-CH 25V 75A TO220AB

Package: TO-220-3

Stock7,376
PHP78NQ03LT,127
NXP

MOSFET N-CH 25V 75A TO220AB

Package: TO-220-3

Stock3,904
PHP75NQ08T,127
NXP

MOSFET N-CH 75V 75A TO220AB

Package: TO-220-3

Stock3,344
PHP73N06T,127
NXP

MOSFET N-CH 60V 73A TO220AB

Package: TO-220-3

Stock4,432
PHP66NQ03LT,127
NXP

MOSFET N-CH 25V 66A TO220AB

Package: TO-220-3

Stock2,544
PHP52N06T,127
NXP

MOSFET N-CH 60V 52A TO220AB

Package: TO-220-3

Stock3,312
PHP45NQ15T,127
NXP

MOSFET N-CH 150V 45.1A TO220AB

Package: TO-220-3

Stock7,200
PHP34NQ11T,127
NXP

MOSFET N-CH 110V 35A TO220AB

Package: TO-220-3

Stock5,232
PHP32N06LT,127
NXP

MOSFET N-CH 60V 34A TO220AB

Package: TO-220-3

Stock3,248
PHP3055E,127
NXP

MOSFET N-CH 60V 10.3A TO220AB

Package: TO-220-3

Stock2,768
PHP225NQ04T,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock3,008
PHP222NQ04LT,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock2,640
PHP21N06LT,127
NXP

MOSFET N-CH 55V 19A TO220AB

Package: TO-220-3

Stock5,456
PHP193NQ06T,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock3,200
PHP176NQ04T,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock2,400
PHP174NQ04LT,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock6,448

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PHU11NQ10T,127	NXP	MOSFET N-CH 100V 10.9A SOT533 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57.7W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,448	MOSFET (Metal Oxide)	100V	10.9A (Tc)	10V	4V @ 1mA	14.7nC @ 10V	360pF @ 25V	±20V	-	57.7W (Tc)	180 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHU108NQ03LT,127	NXP	MOSFET N-CH 25V 75A SOT533 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,192	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	16.3nC @ 4.5V	1375pF @ 12V	±20V	-	187W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHU101NQ03LT,127	NXP	MOSFET N-CH 30V 75A SOT533 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,752	MOSFET (Metal Oxide)	30V	75A (Tc)	5V, 10V	2.5V @ 1mA	23nC @ 5V	2180pF @ 25V	±20V	-	166W (Tc)	5.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHT2NQ10T,135	NXP	MOSFET N-CH 100V 2.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 1.75A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,992	MOSFET (Metal Oxide)	100V	2.5A (Tc)	10V	4V @ 1mA	5.1nC @ 10V	160pF @ 25V	±20V	-	6.25W (Tc)	430 mOhm @ 1.75A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PHP83N03LT,127	NXP	MOSFET N-CH 25V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,376	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	33nC @ 5V	1660pF @ 25V	±15V	-	115W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP78NQ03LT,127	NXP	MOSFET N-CH 25V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1074pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,904	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	13nC @ 5V	1074pF @ 25V	±20V	-	93W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP75NQ08T,127	NXP	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,344	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 1mA	40nC @ 10V	1985pF @ 25V	±20V	-	157W (Tc)	13 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP73N06T,127	NXP	MOSFET N-CH 60V 73A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2464pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,432	MOSFET (Metal Oxide)	60V	73A (Tc)	10V	4V @ 1mA	54nC @ 10V	2464pF @ 25V	±20V	-	166W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP66NQ03LT,127	NXP	MOSFET N-CH 25V 66A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,544	MOSFET (Metal Oxide)	25V	66A (Tc)	5V, 10V	2V @ 1mA	12nC @ 5V	860pF @ 25V	±20V	-	93W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP52N06T,127	NXP	MOSFET N-CH 60V 52A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1592pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,312	MOSFET (Metal Oxide)	60V	52A (Tc)	10V	4V @ 1mA	36nC @ 10V	1592pF @ 25V	±20V	-	120W (Tc)	22 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP45NQ15T,127	NXP	MOSFET N-CH 150V 45.1A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 45.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,200	MOSFET (Metal Oxide)	150V	45.1A (Tc)	10V	4V @ 1mA	32nC @ 10V	1770pF @ 25V	±20V	-	230W (Tc)	42 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP34NQ11T,127	NXP	MOSFET N-CH 110V 35A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,232	MOSFET (Metal Oxide)	110V	35A (Tc)	10V	4V @ 1mA	40nC @ 10V	1700pF @ 25V	±20V	-	136W (Tc)	40 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP32N06LT,127	NXP	MOSFET N-CH 60V 34A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 97W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,248	MOSFET (Metal Oxide)	60V	34A (Tc)	4.5V, 10V	2V @ 1mA	17nC @ 5V	1280pF @ 25V	±15V	-	97W (Tc)	37 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP3055E,127	NXP	MOSFET N-CH 60V 10.3A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,768	MOSFET (Metal Oxide)	60V	10.3A (Tc)	10V	4V @ 1mA	5.8nC @ 10V	250pF @ 25V	±20V	-	33W (Tc)	150 mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP225NQ04T,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,008	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	94nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	3.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP222NQ04LT,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 93.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7880pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,640	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2V @ 1mA	93.6nC @ 5V	7880pF @ 25V	±15V	-	300W (Tc)	2.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP21N06LT,127	NXP	MOSFET N-CH 55V 19A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,456	MOSFET (Metal Oxide)	55V	19A (Tc)	5V, 10V	2V @ 1mA	9.4nC @ 5V	650pF @ 25V	±15V	-	56W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP193NQ06T,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5082pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,200	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	85.6nC @ 10V	5082pF @ 25V	±20V	-	300W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP176NQ04T,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,400	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	68.9nC @ 10V	3620pF @ 25V	±20V	-	250W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP174NQ04LT,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5345pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,448	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2V @ 1mA	64nC @ 5V	5345pF @ 25V	±15V	-	250W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP152NQ03LTA,127	NXP	MOSFET N-CH 25V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,072	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	36nC @ 5V	3140pF @ 25V	±20V	-	150W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP14NQ20T,127	NXP	MOSFET N-CH 200V 14A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,136	MOSFET (Metal Oxide)	200V	14A (Tc)	10V	4V @ 1mA	38nC @ 10V	1500pF @ 25V	±20V	-	125W (Tc)	230 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP143NQ04T,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,216	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	52nC @ 10V	2840pF @ 25V	±20V	-	200W (Tc)	5.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP129NQ04LT,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,896	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2V @ 1mA	44.2nC @ 5V	3965pF @ 25V	±15V	-	200W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP119NQ06T,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,888	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	53nC @ 10V	2820pF @ 25V	±20V	-	200W (Tc)	7.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP112N06T,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4352pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,904	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	87nC @ 10V	4352pF @ 25V	±20V	-	200W (Tc)	8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP110NQ06LT,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,712	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	45nC @ 5V	3960pF @ 25V	±15V	-	200W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHP101NQ04T,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,088	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	36.6nC @ 10V	2020pF @ 25V	±20V	-	157W (Tc)	8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3