Page 7 - NXP Products - Transistors - FETs, MOSFETs - Single

PHP101NQ03LT,127
NXP

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock2,016
PHM30NQ10T,518
NXP

MOSFET N-CH 100V 37.6A 8HVSON

Package: 8-VDFN Exposed Pad

Stock6,032
PHM25NQ10T,518
NXP

MOSFET N-CH 100V 30.7A 8HVSON

Package: 8-VDFN Exposed Pad

Stock5,328
PHM21NQ15T,518
NXP

MOSFET N-CH 150V 22.2A 8HVSON

Package: 8-VDFN Exposed Pad

Stock6,640
PHM18NQ15T,518
NXP

MOSFET N-CH 150V 19A SOT685-1

Package: 8-VDFN Exposed Pad

Stock4,864
PHM15NQ20T,518
NXP

MOSFET N-CH 200V 17.5A 8HVSON

Package: 8-VDFN Exposed Pad

Stock4,080
PHM12NQ20T,518
NXP

MOSFET N-CH 200V 14.4A 8HVSON

Package: 8-VDFN Exposed Pad

Stock7,952
PHK4NQ20T,518
NXP

MOSFET N-CH 200V 4A SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,560
PHK4NQ10T,518
NXP

MOSFET N-CH 100V SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,592
PHK12NQ10T,518
NXP

MOSFET N-CH 100V 11.6A SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,552
PHD98N03LT,118
NXP

MOSFET N-CH 25V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,648
PHD96NQ03LT,118
NXP

MOSFET N-CH 25V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,592
PHD78NQ03LT,118
NXP

MOSFET N-CH 25V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,160
PHD66NQ03LT,118
NXP

MOSFET N-CH 25V 66A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,632
PHD63NQ03LT,118
NXP

MOSFET N-CH 30V 68.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,712
PHD55N03LTA,118
NXP

MOSFET N-CH 25V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,976
PHD45N03LTA,118
NXP

MOSFET N-CH 25V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,440
PHD23NQ10T,118
NXP

MOSFET N-CH 100V 23A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,384
PHD22NQ20T,118
NXP

MOSFET N-CH 200V 21.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,808
PHD21N06LT,118
NXP

MOSFET N-CH 55V 19A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,720

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PHP101NQ03LT,127	NXP	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,016	MOSFET (Metal Oxide)	30V	75A (Tc)	5V, 10V	2.5V @ 1mA	23nC @ 5V	2180pF @ 25V	±20V	-	166W (Tc)	5.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHM30NQ10T,518	NXP	MOSFET N-CH 100V 37.6A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 37.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock6,032	MOSFET (Metal Oxide)	100V	37.6A (Tc)	10V	4V @ 1mA	53.7nC @ 10V	3600pF @ 25V	±20V	-	62.5W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
PHM25NQ10T,518	NXP	MOSFET N-CH 100V 30.7A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock5,328	MOSFET (Metal Oxide)	100V	30.7A (Tc)	10V	4V @ 1mA	26.6nC @ 10V	1800pF @ 20V	±20V	-	62.5W (Tc)	30 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
PHM21NQ15T,518	NXP	MOSFET N-CH 150V 22.2A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock6,640	MOSFET (Metal Oxide)	150V	22.2A (Tc)	5V, 10V	4V @ 1mA	36.2nC @ 10V	2080pF @ 25V	±20V	-	62.5W (Tc)	55 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
PHM18NQ15T,518	NXP	MOSFET N-CH 150V 19A SOT685-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock4,864	MOSFET (Metal Oxide)	150V	19A (Tc)	5V, 10V	4V @ 1mA	26.4nC @ 10V	1150pF @ 25V	±20V	-	62.5W (Tc)	75 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
PHM15NQ20T,518	NXP	MOSFET N-CH 200V 17.5A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock4,080	MOSFET (Metal Oxide)	200V	17.5A (Tc)	10V	4V @ 1mA	40nC @ 10V	2170pF @ 30V	±20V	-	62.5W (Tc)	85 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
PHM12NQ20T,518	NXP	MOSFET N-CH 200V 14.4A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock7,952	MOSFET (Metal Oxide)	200V	14.4A (Tc)	5V, 10V	4V @ 1mA	26nC @ 10V	1230pF @ 25V	±20V	-	62.5W (Tc)	130 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
PHK4NQ20T,518	NXP	MOSFET N-CH 200V 4A SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,560	MOSFET (Metal Oxide)	200V	4A (Tc)	5V, 10V	4V @ 1mA	26nC @ 10V	1230pF @ 25V	±20V	-	6.25W (Tc)	130 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PHK4NQ10T,518	NXP	MOSFET N-CH 100V SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,592	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	4V @ 1mA	22nC @ 10V	880pF @ 25V	±20V	-	2.5W (Ta)	70 mOhm @ 4A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PHK12NQ10T,518	NXP	MOSFET N-CH 100V 11.6A SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1965pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.9W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,552	MOSFET (Metal Oxide)	100V	11.6A (Tc)	10V	4V @ 1mA	35nC @ 10V	1965pF @ 25V	±20V	-	8.9W (Tc)	28 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PHD98N03LT,118	NXP	MOSFET N-CH 25V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,648	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	40nC @ 5V	3000pF @ 20V	±20V	-	111W (Tc)	5.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD96NQ03LT,118	NXP	MOSFET N-CH 25V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4.95 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,592	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	26.7nC @ 5V	2200pF @ 25V	±20V	-	115W (Tc)	4.95 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD78NQ03LT,118	NXP	MOSFET N-CH 25V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,160	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	11nC @ 4.5V	970pF @ 12V	±20V	-	107W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD66NQ03LT,118	NXP	MOSFET N-CH 25V 66A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,632	MOSFET (Metal Oxide)	25V	66A (Tc)	5V, 10V	2V @ 1mA	12nC @ 5V	860pF @ 25V	±20V	-	93W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD63NQ03LT,118	NXP	MOSFET N-CH 30V 68.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,712	MOSFET (Metal Oxide)	30V	68.9A (Tc)	5V, 10V	2.5V @ 1mA	9.6nC @ 5V	920pF @ 25V	±20V	-	111W (Tc)	13 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD55N03LTA,118	NXP	MOSFET N-CH 25V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,976	MOSFET (Metal Oxide)	25V	55A (Tc)	5V, 10V	2V @ 1mA	20nC @ 5V	950pF @ 25V	±20V	-	85W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD45N03LTA,118	NXP	MOSFET N-CH 25V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,440	MOSFET (Metal Oxide)	25V	40A (Tc)	3.5V, 10V	2V @ 1mA	19nC @ 5V	700pF @ 25V	±20V	-	65W (Tc)	21 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD23NQ10T,118	NXP	MOSFET N-CH 100V 23A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,384	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 1mA	22nC @ 10V	1187pF @ 25V	±20V	-	100W (Tc)	70 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD22NQ20T,118	NXP	MOSFET N-CH 200V 21.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 21.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,808	MOSFET (Metal Oxide)	200V	21.1A (Tc)	10V	4V @ 1mA	30.8nC @ 10V	1380pF @ 25V	±20V	-	150W (Tc)	120 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD21N06LT,118	NXP	MOSFET N-CH 55V 19A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,720	MOSFET (Metal Oxide)	55V	19A (Tc)	5V, 10V	2V @ 1mA	9.4nC @ 5V	650pF @ 25V	±15V	-	56W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD16N03LT,118	NXP	MOSFET N-CH 30V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 30V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 32.6W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,312	MOSFET (Metal Oxide)	30V	16A (Tc)	4.5V, 10V	2V @ 1mA	8.5nC @ 10V	210pF @ 30V	±15V	-	32.6W (Tc)	67 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD14NQ20T,118	NXP	MOSFET N-CH 200V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,312	MOSFET (Metal Oxide)	200V	14A (Tc)	5V, 10V	4V @ 1mA	38nC @ 10V	1500pF @ 25V	±20V	-	125W (Tc)	230 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHD110NQ03LT,118	NXP	MOSFET N-CH 25V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	26.7nC @ 5V	2200pF @ 25V	±20V	-	115W (Tc)	4.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHB95NQ04LT,118	NXP	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,112	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2V @ 1mA	32.7nC @ 5V	2700pF @ 25V	±15V	-	157W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHB78NQ03LT,118	NXP	MOSFET N-CH 25V 40A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	25V	40A (Tc)	5V, 10V	2V @ 1mA	11nC @ 4.5V	970pF @ 12V	±20V	-	107W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHB73N06T,118	NXP	MOSFET N-CH 60V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2464pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,360	MOSFET (Metal Oxide)	60V	73A (Tc)	10V	4V @ 1mA	54nC @ 10V	2464pF @ 25V	±20V	-	166W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHB225NQ04T,118	NXP	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,624	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	94nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	3.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHB193NQ06T,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5082pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,728	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	85.6nC @ 10V	5082pF @ 25V	±20V	-	300W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB