Page 9 - NXP Products - Transistors - FETs, MOSFETs - Single

BUK7524-55A,127
NXP

MOSFET N-CH 55V 47A TO220AB

Package: TO-220-3

Stock6,112
BUK7523-75A,127
NXP

MOSFET N-CH 75V 53A TO220AB

Package: TO-220-3

Stock2,032
BUK75150-55A,127
NXP

MOSFET N-CH 55V 11A TO220AB

Package: TO-220-3

Stock2,976
SI9410DY,518
NXP

MOSFET N-CH 30V SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,808
SI4800,518
NXP

MOSFET N-CH 30V 9A SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,664
SI4420DY,518
NXP

MOSFET N-CH 30V SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,608
PSMN040-200W,127
NXP

MOSFET N-CH 200V 50A SOT429

Package: TO-247-3

Stock3,248
PSMN020-150W,127
NXP

MOSFET N-CH 150V 73A SOT429

Package: TO-247-3

Stock2,048
PSMN010-55D,118
NXP

MOSFET N-CH 55V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,752
PSMN009-100W,127
NXP

MOSFET N-CH 100V 100A SOT429

Package: TO-247-3

Stock4,384
PSMN005-55P,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock5,856
PSMN005-25D,118
NXP

MOSFET N-CH 25V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,024
PSMN004-55W,127
NXP

MOSFET N-CH 55V 100A SOT429

Package: TO-247-3

Stock6,416
PSMN004-36B,118
NXP

MOSFET N-CH 36V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,504
PMR780SN,115
NXP

MOSFET N-CH 60V 0.55A SOT416

Package: SC-75, SOT-416

Stock142,200
PMN45EN,165
NXP

MOSFET N-CH 30V 5.2A 6TSOP

Package: SC-74, SOT-457

Stock3,552
PMN28UN,165
NXP

MOSFET N-CH 12V 5.7A 6TSOP

Package: SC-74, SOT-457

Stock6,096
PMG370XN,115
NXP

MOSFET N-CH 30V 0.96A 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock5,024
PHX8NQ11T,127
NXP

MOSFET N-CH 110V 7.5A SOT186A

Package: TO-220-3 Full Pack, Isolated Tab

Stock7,936
PHX45NQ11T,127
NXP

MOSFET N-CH 110V 30.4A SOT186A

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,256

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK7524-55A,127	NXP	MOSFET N-CH 55V 47A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,112	MOSFET (Metal Oxide)	55V	47A (Tc)	10V	4V @ 1mA	-	1310pF @ 25V	±20V	-	106W (Tc)	24 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK7523-75A,127	NXP	MOSFET N-CH 75V 53A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,032	MOSFET (Metal Oxide)	75V	53A (Tc)	10V	4V @ 1mA	-	2385pF @ 25V	±20V	-	138W (Tc)	23 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK75150-55A,127	NXP	MOSFET N-CH 55V 11A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 322pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,976	MOSFET (Metal Oxide)	55V	11A (Tc)	10V	4V @ 1mA	5.5nC @ 10V	322pF @ 25V	±20V	-	36W (Tc)	150 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI9410DY,518	NXP	MOSFET N-CH 30V SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,808	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1V @ 250µA	50nC @ 10V	-	±20V	-	2.5W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4800,518	NXP	MOSFET N-CH 30V 9A SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,664	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	800mV @ 250µA	11.8nC @ 5V	-	±20V	-	2.5W (Ta)	18.5 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4420DY,518	NXP	MOSFET N-CH 30V SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,608	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1V @ 250µA	120nC @ 10V	-	±20V	-	2.5W (Ta)	9 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN040-200W,127	NXP	MOSFET N-CH 200V 50A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,248	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	4V @ 1mA	183nC @ 10V	9530pF @ 25V	±20V	-	300W (Tc)	40 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PSMN020-150W,127	NXP	MOSFET N-CH 150V 73A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9537pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,048	MOSFET (Metal Oxide)	150V	73A (Tc)	10V	4V @ 1mA	227nC @ 10V	9537pF @ 25V	±20V	-	300W (Tc)	20 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PSMN010-55D,118	NXP	MOSFET N-CH 55V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 20V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,752	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	55nC @ 5V	3300pF @ 20V	±15V	-	125W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN009-100W,127	NXP	MOSFET N-CH 100V 100A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,384	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 1mA	214nC @ 10V	9000pF @ 25V	±20V	-	300W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PSMN005-55P,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,856	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	103nC @ 5V	6500pF @ 25V	±15V	-	230W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN005-25D,118	NXP	MOSFET N-CH 25V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,024	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	60nC @ 5V	3500pF @ 20V	±15V	-	125W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN004-55W,127	NXP	MOSFET N-CH 55V 100A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 226nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,416	MOSFET (Metal Oxide)	55V	100A (Tc)	4.5V, 10V	2V @ 1mA	226nC @ 5V	13000pF @ 25V	±15V	-	300W (Tc)	4.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PSMN004-36B,118	NXP	MOSFET N-CH 36V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 36V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 20V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,504	MOSFET (Metal Oxide)	36V	75A (Tc)	4.5V, 10V	2V @ 1mA	97nC @ 5V	6000pF @ 20V	±15V	-	230W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMR780SN,115	NXP	MOSFET N-CH 60V 0.55A SOT416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 530mW (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock142,200	MOSFET (Metal Oxide)	60V	550mA (Ta)	4.5V, 10V	3V @ 250µA	1.05nC @ 10V	23pF @ 30V	±20V	-	530mW (Tc)	920 mOhm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
PMN45EN,165	NXP	MOSFET N-CH 30V 5.2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock3,552	MOSFET (Metal Oxide)	30V	5.2A (Tc)	4.5V, 10V	2V @ 1mA	6.1nC @ 4.5V	495pF @ 25V	20V	-	1.75W (Tc)	40 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PMN28UN,165	NXP	MOSFET N-CH 12V 5.7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock6,096	MOSFET (Metal Oxide)	12V	5.7A (Tc)	1.8V, 4.5V	700mV @ 1mA	10.1nC @ 4.5V	740pF @ 10V	±8V	-	1.75W (Tc)	34 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PMG370XN,115	NXP	MOSFET N-CH 30V 0.96A 6TSSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 960mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 690mW (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSSOP Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock5,024	MOSFET (Metal Oxide)	30V	960mA (Ta)	2.5V, 4.5V	1.5V @ 250µA	0.65nC @ 4.5V	37pF @ 25V	±12V	-	690mW (Tc)	440 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP	6-TSSOP, SC-88, SOT-363
PHX8NQ11T,127	NXP	MOSFET N-CH 110V 7.5A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27.7W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,936	MOSFET (Metal Oxide)	110V	7.5A (Tc)	10V	4V @ 1mA	14.7nC @ 10V	360pF @ 25V	±20V	-	27.7W (Tc)	180 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PHX45NQ11T,127	NXP	MOSFET N-CH 110V 30.4A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,256	MOSFET (Metal Oxide)	110V	30.4A (Tc)	10V	4V @ 1mA	61nC @ 10V	2600pF @ 25V	±20V	-	62.5W (Tc)	25 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PHX34NQ11T,127	NXP	MOSFET N-CH 110V 24.8A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,392	MOSFET (Metal Oxide)	110V	24.8A (Tc)	10V	4V @ 1mA	40nC @ 10V	1700pF @ 25V	±20V	-	56.8W (Tc)	40 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PHX27NQ11T,127	NXP	MOSFET N-CH 110V 20.8A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 20.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,272	MOSFET (Metal Oxide)	110V	20.8A (Tc)	10V	4V @ 1mA	30nC @ 10V	1240pF @ 25V	±20V	-	50W (Tc)	50 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PHX23NQ11T,127	NXP	MOSFET N-CH 110V 16A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41.6W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,288	MOSFET (Metal Oxide)	110V	16A (Tc)	10V	4V @ 1mA	22nC @ 10V	830pF @ 25V	±20V	-	41.6W (Tc)	70 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PHX20N06T,127	NXP	MOSFET N-CH 55V 12.9A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,416	MOSFET (Metal Oxide)	55V	12.9A (Tc)	10V	4V @ 1mA	9.8nC @ 10V	320pF @ 25V	±20V	-	23W (Tc)	75 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PHX18NQ11T,127	NXP	MOSFET N-CH 110V 12.5A SOT186A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 110V Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31.2W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,224	MOSFET (Metal Oxide)	110V	12.5A (Tc)	10V	4V @ 1mA	21nC @ 10V	635pF @ 25V	±20V	-	31.2W (Tc)	90 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PHW80NQ10T,127	NXP	MOSFET N-CH 100V 80A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,360	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 1mA	109nC @ 10V	4720pF @ 25V	±20V	-	263W (Tc)	15 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PHU78NQ03LT,127	NXP	MOSFET N-CH 25V 75A SOT533 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,432	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	11nC @ 4.5V	970pF @ 12V	±20V	-	107W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHU66NQ03LT,127	NXP	MOSFET N-CH 25V 66A SPT533 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,416	MOSFET (Metal Oxide)	25V	66A (Tc)	5V, 10V	2V @ 1mA	12nC @ 5V	860pF @ 25V	±20V	-	93W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA