Page 2 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD3055L104T4G
ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,599,720
NTD3055-094T4G
ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,327,176
NDT02N40T1G
ON Semiconductor

MOSFET N-CH 400V 0.4A SOT223

Package: TO-261-4, TO-261AA

Stock69,588
NTR3A30PZT1G
ON Semiconductor

MOSFET P-CH 20V 3A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock332,136
NDD02N40T4G
ON Semiconductor

MOSFET N-CH 400V 1.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock65,592
NTD5867NLT4G
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock722,364
NTD4969NT4G
ON Semiconductor

MOSFET N-CH 30V 41A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock675,192
CPH3462-TL-W
ON Semiconductor

MOSFET N-CH 100V 1A CPH3

Package: TO-236-3, SC-59, SOT-23-3

Stock24,582
NTGS3455T1G
ON Semiconductor

MOSFET P-CH 30V 2.5A 6-TSOP

Package: SOT-23-6

Stock1,010,352
NVTR4502PT1G
ON Semiconductor

MOSFET P-CH 30V 1.95A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock943,500
NTD14N03RT4G
ON Semiconductor

MOSFET N-CH 25V 2.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock580,872
MCH3481-TL-W
ON Semiconductor

MOSFET N-CH 20V 2A MCPH3

Package: 3-SMD, Flat Leads

Stock24,624
MGSF2N02ELT1G
ON Semiconductor

MOSFET N-CH 20V 2.8A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock875,004
NTJS4151PT1G
ON Semiconductor

MOSFET P-CH 20V 3.3A SC-88

Package: 6-TSSOP, SC-88, SOT-363

Stock4,290,948
NTR4171PT1G
ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock421,716
NTR1P02LT1G
ON Semiconductor

MOSFET P-CH 20V 1.3A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,403,036
5LN01C-TB-E
ON Semiconductor

MOSFET N-CH 50V 100MA 3CP

Package: TO-236-3, SC-59, SOT-23-3

Stock275,196
NTK3139PT1G
ON Semiconductor

MOSFET P-CH 20V 0.66A SOT-723

Package: SOT-723

Stock294,204
3LN01M-TL-H
ON Semiconductor

MOSFET N-CH 30V 150MA MCP

Package: SC-70, SOT-323

Stock24,522
BVSS84LT1G
ON Semiconductor

MOSFET P-CH 50V 130MA SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock25,002

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD3055L104T4G	ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,599,720	MOSFET (Metal Oxide)	60V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±15V	-	1.5W (Ta), 48W (Tj)	104 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055-094T4G	ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,327,176	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	94 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NDT02N40T1G	ON Semiconductor	MOSFET N-CH 400V 0.4A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock69,588	MOSFET (Metal Oxide)	400V	400mA (Tc)	10V	2V @ 250µA	5.5nC @ 10V	121pF @ 25V	±20V	-	2W (Tc)	5.5 Ohm @ 220mA, 10V	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NTR3A30PZT1G	ON Semiconductor	MOSFET P-CH 20V 3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1651pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock332,136	MOSFET (Metal Oxide)	20V	3A (Ta)	1.8V, 4.5V	1V @ 250µA	17.6nC @ 4.5V	1651pF @ 15V	±8V	-	480mW (Ta)	38 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NDD02N40T4G	ON Semiconductor	MOSFET N-CH 400V 1.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock65,592	MOSFET (Metal Oxide)	400V	1.7A (Tc)	10V	2V @ 250µA	5.5nC @ 10V	121pF @ 25V	±20V	-	39W (Tc)	5.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5867NLT4G	ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock722,364	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 10V	675pF @ 25V	±20V	-	36W (Tc)	39 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4969NT4G	ON Semiconductor	MOSFET N-CH 30V 41A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock675,192	MOSFET (Metal Oxide)	30V	9.4A (Ta), 41A (Tc)	4.5V, 10V	2.5V @ 250µA	9nC @ 4.5V	837pF @ 15V	±20V	-	1.38W (Ta), 26.3W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CPH3462-TL-W	ON Semiconductor	MOSFET N-CH 100V 1A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 785 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock24,582	MOSFET (Metal Oxide)	100V	1A (Ta)	4V, 10V	2.6V @ 1mA	3.4nC @ 10V	155pF @ 20V	±20V	-	1W (Ta)	785 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
NTGS3455T1G	ON Semiconductor	MOSFET P-CH 30V 2.5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,010,352	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	480pF @ 5V	±20V	-	500mW (Ta)	100 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NVTR4502PT1G	ON Semiconductor	MOSFET P-CH 30V 1.95A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Tj) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.95A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock943,500	MOSFET (Metal Oxide)	30V	1.13A (Ta)	4.5V, 10V	3V @ 250µA	10nC @ 10V	200pF @ 15V	±20V	-	400mW (Tj)	200 mOhm @ 1.95A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTD14N03RT4G	ON Semiconductor	MOSFET N-CH 25V 2.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock580,872	MOSFET (Metal Oxide)	25V	2.5A (Ta)	4.5V, 10V	2V @ 250µA	1.8nC @ 5V	115pF @ 20V	±20V	-	1.04W (Ta), 20.8W (Tc)	95 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
MCH3481-TL-W	ON Semiconductor	MOSFET N-CH 20V 2A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V Vgs (Max): ±9V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 104 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock24,624	MOSFET (Metal Oxide)	20V	2A (Ta)	1.2V, 4.5V	900mV @ 1mA	2.9nC @ 4.5V	175pF @ 10V	±9V	-	800mW (Ta)	104 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
MGSF2N02ELT1G	ON Semiconductor	MOSFET N-CH 20V 2.8A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 5V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock875,004	MOSFET (Metal Oxide)	20V	2.8A (Ta)	2.5V, 4.5V	1V @ 250µA	3.5nC @ 4V	150pF @ 5V	±8V	-	1.25W (Ta)	85 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTJS4151PT1G	ON Semiconductor	MOSFET P-CH 20V 3.3A SC-88 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock4,290,948	MOSFET (Metal Oxide)	20V	3.3A (Ta)	1.8V, 4.5V	1.2V @ 250µA	10nC @ 4.5V	850pF @ 10V	±12V	-	1W (Ta)	60 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTR4171PT1G	ON Semiconductor	MOSFET P-CH 30V 2.2A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock421,716	MOSFET (Metal Oxide)	30V	2.2A (Ta)	2.5V, 10V	1.4V @ 250µA	15.6nC @ 10V	720pF @ 15V	±12V	-	480mW (Ta)	75 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTR1P02LT1G	ON Semiconductor	MOSFET P-CH 20V 1.3A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,403,036	MOSFET (Metal Oxide)	20V	1.3A (Ta)	2.5V, 4.5V	1.25V @ 250µA	5.5nC @ 4V	225pF @ 5V	±12V	-	400mW (Ta)	220 mOhm @ 750mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
5LN01C-TB-E	ON Semiconductor	MOSFET N-CH 50V 100MA 3CP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock275,196	MOSFET (Metal Oxide)	50V	100mA (Ta)	1.5V, 4V	-	1.57nC @ 10V	6.6pF @ 10V	±10V	-	250mW (Ta)	7.8 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	3-CP	TO-236-3, SC-59, SOT-23-3
NTK3139PT1G	ON Semiconductor	MOSFET P-CH 20V 0.66A SOT-723 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock294,204	MOSFET (Metal Oxide)	20V	660mA (Ta)	1.5V, 4.5V	1.2V @ 250µA	-	170pF @ 16V	±6V	-	310mW (Ta)	480 mOhm @ 780mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
3LN01M-TL-H	ON Semiconductor	MOSFET N-CH 30V 150MA MCP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 / MCPH3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock24,522	MOSFET (Metal Oxide)	30V	150mA (Ta)	1.5V, 4V	-	1.58nC @ 10V	7pF @ 10V	±10V	-	150mW (Ta)	3.7 Ohm @ 80mA, 4V	150°C (TJ)	Surface Mount	SC-70 / MCPH3	SC-70, SOT-323
BVSS84LT1G	ON Semiconductor	MOSFET P-CH 50V 130MA SOT-23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock25,002	MOSFET (Metal Oxide)	50V	130mA (Ta)	5V	2V @ 250µA	2.2nC @ 10V	36pF @ 5V	±20V	-	225mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTK3043NT1G	ON Semiconductor	MOSFET N-CH 20V 210MA SOT-723 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock6,110,112	MOSFET (Metal Oxide)	20V	210mA (Ta)	1.65V, 4.5V	1.3V @ 250µA	-	11pF @ 10V	±10V	-	310mW (Ta)	3.4 Ohm @ 10mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
BVSS138LT1G	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock210,552	MOSFET (Metal Oxide)	50V	200mA (Ta)	5V	1.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
MMBF170LT1G	ON Semiconductor	MOSFET N-CH 60V 500MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,692,408	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	225mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2V7002KT1G	ON Semiconductor	MOSFET N-CH 60V 320MA SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,840,404	MOSFET (Metal Oxide)	60V	320mA (Ta)	4.5V, 10V	2.3V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	±20V	-	300mW (Tj)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
2V7002LT1G	ON Semiconductor	MOSFET N-CH 60V 0.115A SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock759,444	MOSFET (Metal Oxide)	60V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	225mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTR4003NT3G	ON Semiconductor	MOSFET N-CH 30V 500MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 690mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock646,740	MOSFET (Metal Oxide)	30V	500mA (Ta)	2.5V, 4V	1.4V @ 250µA	1.15nC @ 5V	21pF @ 5V	±20V	-	690mW (Ta)	1.5 Ohm @ 10mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2V7002LT3G	ON Semiconductor	MOSFET N-CH 60V .115A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock120,012	MOSFET (Metal Oxide)	60V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	225mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2N7002ET1G	ON Semiconductor	MOSFET N-CH 60V 260MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 26.7pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,339,704	MOSFET (Metal Oxide)	60V	260mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.81nC @ 5V	26.7pF @ 25V	±20V	-	300mW (Tj)	2.5 Ohm @ 240mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3