Page 3 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTB45N06LT4G
ON Semiconductor

MOSFET N-CH 60V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock501,444
NTB25P06T4G
ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock421,368
NTB45N06T4G
ON Semiconductor

MOSFET N-CH 60V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock450,216
NTP5864NG
ON Semiconductor

MOSFET N-CH 60V 63A TO-220

Package: TO-220-3

Stock559,524
NTD3055L104-1G
ON Semiconductor

MOSFET N-CH 60V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock659,076
NTD2955-1G
ON Semiconductor

MOSFET P-CH 60V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock324,864
NTD4815N-35G
ON Semiconductor

MOSFET NCH 30V 6.9A IPAK TRIMMED

Package: TO-251-3 Stub Leads, IPak

Stock17,706
MMSF3P02HDR2G
ON Semiconductor

MOSFET P-CH 20V 5.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock470,016
NTD6414ANT4G
ON Semiconductor

MOSFET N-CH 100V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,396
NTMFS5C670NLT1G
ON Semiconductor

MOSFET N-CH 60V 68A SO8FL

Package: 8-PowerTDFN

Stock15,264
NTD4302T4G
ON Semiconductor

MOSFET N-CH 30V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,207,980
NDD02N40-1G
ON Semiconductor

MOSFET N-CH 400V 1.7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock37,692
NTMFS4C03NT1G
ON Semiconductor

MOSFET N-CH 30V 30A SO8FL

Package: 8-PowerTDFN

Stock41,496
NTTFS5C673NLTAG
ON Semiconductor

MOSFET N-CH 60V 13A WDFN8

Package: 8-PowerWDFN

Stock14,256
NTD20N06T4G
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock862,476
NTD20N06LT4G
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock990,384
NTD20P06LT4G
ON Semiconductor

MOSFET P-CH 60V 15.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,190,028
NTD20N03L27T4G
ON Semiconductor

MOSFET N-CH 30V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock216,000
NTD24N06LT4G
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,099,944
SVD5865NLT4G
ON Semiconductor

MOSFET N-CH 60V 10A DPAK-4

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock24,066

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTB45N06LT4G	ON Semiconductor	MOSFET N-CH 60V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock501,444	MOSFET (Metal Oxide)	60V	45A (Ta)	5V	2V @ 250µA	32nC @ 5V	1700pF @ 25V	±15V	-	2.4W (Ta), 125W (Tj)	28 mOhm @ 22.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB25P06T4G	ON Semiconductor	MOSFET P-CH 60V 27.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 82 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock421,368	MOSFET (Metal Oxide)	60V	27.5A (Ta)	10V	4V @ 250µA	50nC @ 10V	1680pF @ 25V	±15V	-	120W (Tj)	82 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB45N06T4G	ON Semiconductor	MOSFET N-CH 60V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock450,216	MOSFET (Metal Oxide)	60V	45A (Ta)	10V	4V @ 250µA	46nC @ 10V	1725pF @ 25V	±20V	-	2.4W (Ta), 125W (Tj)	26 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTP5864NG	ON Semiconductor	MOSFET N-CH 60V 63A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock559,524	MOSFET (Metal Oxide)	60V	63A (Tc)	10V	4V @ 250µA	31nC @ 10V	1680pF @ 25V	±20V	-	107W (Tc)	12.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD3055L104-1G	ON Semiconductor	MOSFET N-CH 60V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock659,076	MOSFET (Metal Oxide)	60V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±15V	-	1.5W (Ta), 48W (Tj)	104 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD2955-1G	ON Semiconductor	MOSFET P-CH 60V 12A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock324,864	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD4815N-35G	ON Semiconductor	MOSFET NCH 30V 6.9A IPAK TRIMMED FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock17,706	MOSFET (Metal Oxide)	30V	6.9A (Ta), 35A (Tc)	4.5V, 11.5V	2.5V @ 250µA	14.1nC @ 11.5V	770pF @ 12V	±20V	-	1.26W (Ta), 32.6W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
MMSF3P02HDR2G	ON Semiconductor	MOSFET P-CH 20V 5.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock470,016	MOSFET (Metal Oxide)	20V	5.6A (Ta)	4.5V, 10V	2V @ 250µA	46nC @ 10V	1400pF @ 16V	±20V	-	2.5W (Ta)	75 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTD6414ANT4G	ON Semiconductor	MOSFET N-CH 100V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,396	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 250µA	40nC @ 10V	1450pF @ 25V	±20V	-	100W (Tc)	37 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS5C670NLT1G	ON Semiconductor	MOSFET N-CH 60V 68A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock15,264	MOSFET (Metal Oxide)	60V	17A (Ta), 71A (Tc)	4.5V, 10V	2V @ 250µA	20nC @ 10V	1400pF @ 25V	±20V	-	3.6W (Ta), 61W (Tc)	6.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTD4302T4G	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,207,980	MOSFET (Metal Oxide)	30V	8.4A (Ta), 68A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	2400pF @ 24V	±20V	-	1.04W (Ta), 75W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NDD02N40-1G	ON Semiconductor	MOSFET N-CH 400V 1.7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock37,692	MOSFET (Metal Oxide)	400V	1.7A (Tc)	10V	2V @ 250µA	5.5nC @ 10V	121pF @ 25V	±20V	-	39W (Tc)	5.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTMFS4C03NT1G	ON Semiconductor	MOSFET N-CH 30V 30A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock41,496	MOSFET (Metal Oxide)	30V	30A (Ta), 136A (Tc)	4.5V, 10V	2.2V @ 250µA	45.2nC @ 10V	3071pF @ 15V	±20V	-	3.1W (Ta), 64W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTTFS5C673NLTAG	ON Semiconductor	MOSFET N-CH 60V 13A WDFN8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock14,256	MOSFET (Metal Oxide)	60V	13A (Ta), 50A (Tc)	4.5V, 10V	2V @ 35µA	9.5nC @ 10V	880pF @ 25V	±20V	-	3.1W (Ta), 46W (Tc)	9.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTD20N06T4G	ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock862,476	MOSFET (Metal Oxide)	60V	20A (Ta)	10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	±20V	-	1.88W (Ta), 60W (Tj)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N06LT4G	ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock990,384	MOSFET (Metal Oxide)	60V	20A (Ta)	5V	2V @ 250µA	32nC @ 5V	990pF @ 25V	±15V	-	1.36W (Ta), 60W (Tj)	48 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20P06LT4G	ON Semiconductor	MOSFET P-CH 60V 15.5A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,190,028	MOSFET (Metal Oxide)	60V	15.5A (Ta)	5V	2V @ 250µA	26nC @ 5V	1190pF @ 25V	±20V	-	65W (Tc)	150 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N03L27T4G	ON Semiconductor	MOSFET N-CH 30V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock216,000	MOSFET (Metal Oxide)	30V	20A (Ta)	4V, 5V	2V @ 250µA	18.9nC @ 10V	1260pF @ 25V	±20V	-	1.75W (Ta), 74W (Tc)	27 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD24N06LT4G	ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,099,944	MOSFET (Metal Oxide)	60V	24A (Ta)	5V	2V @ 250µA	32nC @ 5V	1140pF @ 25V	±15V	-	1.36W (Ta), 62.5W (Tj)	45 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SVD5865NLT4G	ON Semiconductor	MOSFET N-CH 60V 10A DPAK-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24,066	MOSFET (Metal Oxide)	60V	10A (Ta), 46A (Tc)	4.5V, 10V	2V @ 250µA	29nC @ 10V	1400pF @ 25V	±20V	-	3.1W (Ta), 71W (Tc)	16 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFS4C05NTAG	ON Semiconductor	MOSFET N-CH 30V 75A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,432	MOSFET (Metal Oxide)	30V	12A (Ta), 75A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	1988pF @ 15V	±20V	-	820mW (Ta), 33W (Tc)	3.6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS4C08NTAG	ON Semiconductor	MOSFET N-CH 30V 52A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,344	MOSFET (Metal Oxide)	30V	9.3A (Ta)	4.5V, 10V	2.2V @ 250µA	18.2nC @ 10V	1113pF @ 15V	±20V	-	820mW (Ta), 25.5W (Tc)	5.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS4932NTAG	ON Semiconductor	MOSFET N-CH 30V 11A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3111pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock8,136	MOSFET (Metal Oxide)	30V	11A (Ta), 79A (Tc)	4.5V, 10V	2.2V @ 250µA	46.5nC @ 10V	3111pF @ 15V	±20V	-	850mW (Ta), 43W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTMS4177PR2G	ON Semiconductor	MOSFET P-CH 30V 6.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,076,964	MOSFET (Metal Oxide)	30V	6.6A (Ta)	4.5V, 10V	2.5V @ 250µA	55nC @ 10V	3100pF @ 24V	±20V	-	840mW (Ta)	12 mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTGS3136PT1G	ON Semiconductor	MOSFET P-CH 20V 3.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1901pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,393,248	MOSFET (Metal Oxide)	20V	3.7A (Ta)	1.8V, 4.5V	1V @ 250µA	29nC @ 4.5V	1901pF @ 10V	±8V	-	700mW (Ta)	33 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTMS5P02R2G	ON Semiconductor	MOSFET P-CH 20V 3.95A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 16V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 790mW (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock486,096	MOSFET (Metal Oxide)	20V	3.95A (Ta)	2.5V, 4.5V	1.25V @ 250µA	35nC @ 4.5V	1900pF @ 16V	±10V	-	790mW (Ta)	33 mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTF3055-100T1G	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock853,464	MOSFET (Metal Oxide)	60V	3A (Ta)	10V	4V @ 250µA	22nC @ 10V	455pF @ 25V	±20V	-	1.3W (Ta)	110 mOhm @ 1.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NTD3055L170T4G	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock800,844	MOSFET (Metal Oxide)	60V	9A (Ta)	5V	2V @ 250µA	10nC @ 5V	275pF @ 25V	±15V	-	1.5W (Ta), 28.5W (Tj)	170 mOhm @ 4.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63