Page 7 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NDD04N50ZT4G
ON Semiconductor

MOSFET N-CH 500V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock66,276
NTMFS4923NET1G
ON Semiconductor

MOSFET N-CH 30V 91A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock16,482
NTMS4920NR2G
ON Semiconductor

MOSFET N-CH 30V 10.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock533,088
NTMS7N03R2G
ON Semiconductor

MOSFET N-CH 30V 4.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock140,532
NTMFS4934NT3G
ON Semiconductor

MOSFET N-CH 30V 147A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock43,926
ECH8310-TL-H
ON Semiconductor

MOSFET P-CH 30V 9A ECH8

Package: 8-SMD, Flat Lead

Stock4,576
NVF5P03T3G
ON Semiconductor

MOSFET P-CH 30V 3.7A SOT-223

Package: TO-261-4, TO-261AA

Stock5,776
NTMFS5C468NLT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock6,992
ATP106-TL-H
ON Semiconductor

MOSFET P-CH 40V 30A ATPAK

Package: ATPAK (2 leads+tab)

Stock27,360
NTNS3193NZT5G
ON Semiconductor

MOSFET N-CH 20V 0.224A XLLGA3

Package: 3-XFLGA

Stock2,288
1HP04CH-TL-W
ON Semiconductor

MOSFET P-CH 100V 0.17A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,328
EFC4612R-TR
ON Semiconductor

MOSFET N-CH 24V 6A EFCP

Package: 4-XFBGA

Stock28,800
NTD3055-150T4G
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,293,144
NVD3055L170T4G-VF01
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,248
ATP404-TL-H
ON Semiconductor

MOSFET N-CH 60V 95A ATPAK

Package: ATPAK (2 leads+tab)

Stock28,038
NTNS3190NZT5G
ON Semiconductor

MOSFET N-CH 20V 0.224A XLLGA3

Package: 3-XFDFN

Stock216,000
NTTFS4928NTAG
ON Semiconductor

MOSFET N-CH 30V 7.3A 8WDFN

Package: 8-PowerWDFN

Stock352,212
SVD5867NLT4G
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,368
NTMS4801NR2G
ON Semiconductor

MOSFET N-CH 30V 7.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,076,352
NTLJS4114NT1G
ON Semiconductor

MOSFET N-CH 30V 3.6A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock572,652

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NDD04N50ZT4G	ON Semiconductor	MOSFET N-CH 500V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock66,276	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	308pF @ 25V	±30V	-	61W (Tc)	2.7 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4923NET1G	ON Semiconductor	MOSFET N-CH 30V 91A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock16,482	MOSFET (Metal Oxide)	30V	12.7A (Ta), 91A (Tc)	4.5V, 10V	2V @ 250µA	22nC @ 4.5V	4850pF @ 15V	±20V	-	930mW (Ta), 48W (Tc)	3.3 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMS4920NR2G	ON Semiconductor	MOSFET N-CH 30V 10.6A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4068pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock533,088	MOSFET (Metal Oxide)	30V	10.6A (Ta)	4.5V, 10V	3V @ 250µA	58.9nC @ 10V	4068pF @ 25V	±20V	-	820mW (Ta)	4.3 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMS7N03R2G	ON Semiconductor	MOSFET N-CH 30V 4.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock140,532	MOSFET (Metal Oxide)	30V	4.8A (Ta)	4.5V, 10V	3V @ 250µA	43nC @ 10V	1190pF @ 25V	±20V	-	800mW (Ta)	23 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMFS4934NT3G	ON Semiconductor	MOSFET N-CH 30V 147A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta), 69.44W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock43,926	MOSFET (Metal Oxide)	30V	17.1A (Ta), 147A (Tc)	4.5V, 10V	2.2V @ 250µA	34nC @ 4.5V	5505pF @ 15V	±20V	-	930mW (Ta), 69.44W (Tc)	2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
ECH8310-TL-H	ON Semiconductor	MOSFET P-CH 30V 9A ECH8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ECH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,576	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	-	28nC @ 10V	1400pF @ 10V	±20V	-	1.5W (Ta)	17 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	8-ECH	8-SMD, Flat Lead
NVF5P03T3G	ON Semiconductor	MOSFET P-CH 30V 3.7A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,776	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 10V	950pF @ 25V	±20V	-	1.56W (Ta)	100 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTMFS5C468NLT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,992	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	7.3nC @ 10V	570pF @ 20V	±20V	-	3.5W (Ta), 28W (Tc)	10.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
ATP106-TL-H	ON Semiconductor	MOSFET P-CH 40V 30A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock27,360	MOSFET (Metal Oxide)	40V	30A (Ta)	4.5V, 10V	-	29nC @ 10V	1380pF @ 20V	±20V	-	40W (Tc)	25 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
NTNS3193NZT5G	ON Semiconductor	MOSFET N-CH 20V 0.224A XLLGA3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 224mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15.8pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 120mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-XLLGA (0.62x0.62) Package / Case: 3-XFLGA	Package: 3-XFLGA	Stock2,288	MOSFET (Metal Oxide)	20V	224mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.7nC @ 4.5V	15.8pF @ 15V	±8V	-	120mW (Ta)	1.4 Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-XLLGA (0.62x0.62)	3-XFLGA
1HP04CH-TL-W	ON Semiconductor	MOSFET P-CH 100V 0.17A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18 Ohm @ 80mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,328	MOSFET (Metal Oxide)	100V	170mA (Ta)	4V, 10V	2.6V @ 100µA	0.9nC @ 10V	14pF @ 20V	±20V	-	-	18 Ohm @ 80mA, 10V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
EFC4612R-TR	ON Semiconductor	MOSFET N-CH 24V 6A EFCP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EFCP1313-4CC-037 Package / Case: 4-XFBGA	Package: 4-XFBGA	Stock28,800	MOSFET (Metal Oxide)	24V	6A (Ta)	-	1.3V @ 1mA	7nC @ 4.5V	-	±12V	-	1.6W (Ta)	45 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	EFCP1313-4CC-037	4-XFBGA
NTD3055-150T4G	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,293,144	MOSFET (Metal Oxide)	60V	9A (Ta)	10V	4V @ 250µA	15nC @ 10V	280pF @ 25V	±20V	-	1.5W (Ta), 28.8W (Tj)	150 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVD3055L170T4G-VF01	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,248	MOSFET (Metal Oxide)	60V	9A (Ta)	5V	2V @ 250µA	10nC @ 5V	275pF @ 25V	±15V	-	1.5W (Ta), 28.5W (Tj)	170 mOhm @ 4.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
ATP404-TL-H	ON Semiconductor	MOSFET N-CH 60V 95A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 95A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 48A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock28,038	MOSFET (Metal Oxide)	60V	95A (Ta)	4.5V, 10V	-	120nC @ 10V	6400pF @ 20V	±20V	-	70W (Tc)	7.2 mOhm @ 48A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
NTNS3190NZT5G	ON Semiconductor	MOSFET N-CH 20V 0.224A XLLGA3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 224mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15.8pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 120mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-XLLGA (0.62x0.62) Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock216,000	MOSFET (Metal Oxide)	20V	224mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.7nC @ 4.5V	15.8pF @ 15V	±8V	-	120mW (Ta)	1.4 Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-XLLGA (0.62x0.62)	3-XFDFN
NTTFS4928NTAG	ON Semiconductor	MOSFET N-CH 30V 7.3A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 810mW (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock352,212	MOSFET (Metal Oxide)	30V	7.3A (Ta), 37A (Tc)	4.5V, 10V	2.2V @ 250µA	16nC @ 10V	913pF @ 15V	±20V	-	810mW (Ta), 20.8W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SVD5867NLT4G	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,368	MOSFET (Metal Oxide)	60V	22A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 10V	675pF @ 25V	±20V	-	3.3W (Ta), 43W (Tc)	39 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMS4801NR2G	ON Semiconductor	MOSFET N-CH 30V 7.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2201pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,076,352	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4.5V, 10V	2.5V @ 250µA	25nC @ 10V	2201pF @ 25V	±20V	-	800mW (Ta)	9 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTLJS4114NT1G	ON Semiconductor	MOSFET N-CH 30V 3.6A 6-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock572,652	MOSFET (Metal Oxide)	30V	3.6A (Ta)	1.8V, 4.5V	1V @ 250µA	13nC @ 4.5V	650pF @ 15V	±12V	-	700mW (Ta)	35 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLUS3A18PZTAG	ON Semiconductor	MOSFET P-CH 20V 8.2A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock2,016,240	MOSFET (Metal Oxide)	20V	5.1A (Ta)	1.5V, 4.5V	1V @ 250µA	28nC @ 4.5V	2240pF @ 15V	±8V	-	700mW (Ta)	18 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
NVD5807NT4G-VF01	ON Semiconductor	MOSFET N-CH 40V 23A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,568	MOSFET (Metal Oxide)	40V	23A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 10V	603pF @ 25V	±20V	-	33W (Tc)	31 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4863NT4G	ON Semiconductor	MOSFET N-CH 25V 9.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,517,832	MOSFET (Metal Oxide)	25V	9.2A (Ta), 49A (Tc)	4.5V, 10V	2.5V @ 250µA	13.5nC @ 4.5V	990pF @ 12V	±20V	-	1.27W (Ta), 36.6W (Tc)	9.3 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CPH6354-TL-W	ON Semiconductor	MOSFET P-CH 60V 4A CPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,056	MOSFET (Metal Oxide)	60V	4A (Ta)	4V, 10V	2.6V @ 1mA	14nC @ 10V	600pF @ 20V	±20V	-	1.6W (Ta)	100 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
NTHD3101FT1G	ON Semiconductor	MOSFET P-CH 20V 3.2A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,190,344	MOSFET (Metal Oxide)	20V	3.2A (Tj)	1.8V, 4.5V	1.5V @ 250µA	7.4nC @ 4.5V	680pF @ 10V	±8V	Schottky Diode (Isolated)	1.1W (Ta)	80 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
PCP1403-TD-H	ON Semiconductor	MOSFET N-CH 60V 4.5A SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89/PCP-1 Package / Case: TO-243AA	Package: TO-243AA	Stock24,000	MOSFET (Metal Oxide)	60V	4.5A (Ta)	4V, 10V	2.6V @ 1mA	6.7nC @ 10V	310pF @ 20V	±20V	-	3.5W (Tc)	117 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	SOT-89/PCP-1	TO-243AA
NVTR01P02LT1G	ON Semiconductor	MOSFET P-CH 20V 1.3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,682,436	MOSFET (Metal Oxide)	20V	1.3A (Ta)	2.5V, 4.5V	1.25V @ 250µA	3.1nC @ 4V	225pF @ 5V	±12V	-	400mW (Ta)	220 mOhm @ 750mA, 4.5V	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTA4151PT1G	ON Semiconductor	MOSFET P-CH 20V 0.76A SOT-416 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 301mW (Tj) Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock3,401,076	MOSFET (Metal Oxide)	20V	760mA (Tj)	1.8V, 4.5V	450mV @ 250µA	2.1nC @ 4.5V	156pF @ 5V	±6V	-	301mW (Tj)	360 mOhm @ 350mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416