Page 10 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTZS3151PT1G
ON Semiconductor

MOSFET P-CH 20V 0.86A SOT-563

Package: SOT-563, SOT-666

Stock1,007,376
NTA4153NT1G
ON Semiconductor

MOSFET N-CH 20V 915MA SOT-416

Package: SC-75, SOT-416

Stock16,856,664
NTR4101PT1G
ON Semiconductor

MOSFET P-CH 20V 1.8A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock9,510,468
2N7002WT1G
ON Semiconductor

MOSFET N-CH 60V 310MA SOT323

Package: SC-70, SOT-323

Stock974,952
NDPL180N10BG
ON Semiconductor

MOSFET N-CH 180A 100V TO220-3

Package: TO-220-3

Stock6,492
NVMFS6B14NLWFT1G
ON Semiconductor

MOSFET N-CH 100V 11A DFN5

Package: 8-PowerTDFN

Stock7,856
NTB6413ANT4G
ON Semiconductor

MOSFET N-CH 100V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,132
ATP212-TL-H
ON Semiconductor

MOSFET N-CH 60V 35A ATPAK

Package: ATPAK (2 leads+tab)

Stock3,152
NTMFS4833NT3G
ON Semiconductor

MOSFET N-CH 30V 16A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,380
NVTFS5820NLTAG
ON Semiconductor

MOSFET N-CH 60V 37A 8WDFN

Package: 8-PowerWDFN

Stock3,728
NTTFS3A08PZTAG
ON Semiconductor

MOSFET P-CH 20V 14A U8FL

Package: 8-PowerWDFN

Stock9,096
NTMFS4845NT1G
ON Semiconductor

MOSFET N-CH 30V 13.7A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock22,728
SFT1342-TL-W
ON Semiconductor

MOSFET P-CH 60V 12A TP-FA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,712
NTTFS5C454NLTAG
ON Semiconductor

MOSFET N-CH 40V 20A WDFN8

Package: 8-PowerWDFN

Stock7,472
NTMFS4835NT1G
ON Semiconductor

MOSFET N-CH 30V 12A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock193,572
NVF6P02T3G
ON Semiconductor

MOSFET P-CH 20V 10A SOT-223

Package: TO-261-4, TO-261AA

Stock2,100
NTF6P02T3G
ON Semiconductor

MOSFET P-CH 20V 10A SOT223

Package: TO-261-4, TO-261AA

Stock573,996
NTD24N06T4G
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock452,088
NDD03N80ZT4G
ON Semiconductor

MOSFET N-CH 800V 2.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock24,000
SVD2955T4G
ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,960

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTZS3151PT1G	ON Semiconductor	MOSFET P-CH 20V 0.86A SOT-563 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 170mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock1,007,376	MOSFET (Metal Oxide)	20V	860mA (Ta)	1.8V, 4.5V	1V @ 250µA	5.6nC @ 4.5V	458pF @ 16V	±8V	-	170mW (Ta)	150 mOhm @ 950mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563	SOT-563, SOT-666
NTA4153NT1G	ON Semiconductor	MOSFET N-CH 20V 915MA SOT-416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock16,856,664	MOSFET (Metal Oxide)	20V	915mA (Ta)	1.5V, 4.5V	1.1V @ 250µA	1.82nC @ 4.5V	110pF @ 16V	±6V	-	300mW (Tj)	230 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
NTR4101PT1G	ON Semiconductor	MOSFET P-CH 20V 1.8A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock9,510,468	MOSFET (Metal Oxide)	20V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	8.5nC @ 4.5V	675pF @ 10V	±8V	-	420mW (Ta)	85 mOhm @ 1.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2N7002WT1G	ON Semiconductor	MOSFET N-CH 60V 310MA SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280mW (Tj) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock974,952	MOSFET (Metal Oxide)	60V	310mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	±20V	-	280mW (Tj)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
NDPL180N10BG	ON Semiconductor	MOSFET N-CH 180A 100V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 15V, 50A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,492	MOSFET (Metal Oxide)	100V	180A (Ta)	10V, 15V	4V @ 1mA	95nC @ 10V	6950pF @ 50V	±20V	-	2.1W (Ta), 200W (Tc)	3 mOhm @ 15V, 50A	175°C (TJ)	Through Hole	TO-220-3	TO-220-3
NVMFS6B14NLWFT1G	ON Semiconductor	MOSFET N-CH 100V 11A DFN5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,856	MOSFET (Metal Oxide)	100V	11A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 4.5V	1680pF @ 25V	±16V	-	3.8W (Ta), 94W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTB6413ANT4G	ON Semiconductor	MOSFET N-CH 100V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,132	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	51nC @ 10V	1800pF @ 25V	±20V	-	136W (Tc)	28 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ATP212-TL-H	ON Semiconductor	MOSFET N-CH 60V 35A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock3,152	MOSFET (Metal Oxide)	60V	35A (Ta)	4V, 10V	-	34.5nC @ 10V	1820pF @ 20V	±20V	-	40W (Tc)	23 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
NTMFS4833NT3G	ON Semiconductor	MOSFET N-CH 30V 16A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 910mW (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,380	MOSFET (Metal Oxide)	30V	16A (Ta), 156A (Tc)	4.5V, 10V	2.5V @ 250µA	88nC @ 11.5V	5600pF @ 12V	±20V	-	910mW (Ta), 125W (Tc)	2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVTFS5820NLTAG	ON Semiconductor	MOSFET N-CH 60V 37A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1462pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,728	MOSFET (Metal Oxide)	60V	11A (Ta)	4.5V, 10V	2.3V @ 250µA	28nC @ 10V	1462pF @ 25V	±20V	-	3.2W (Ta), 21W (Tc)	11.5 mOhm @ 8.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS3A08PZTAG	ON Semiconductor	MOSFET P-CH 20V 14A U8FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock9,096	MOSFET (Metal Oxide)	20V	9A (Ta)	2.5V, 4.5V	1V @ 250µA	56nC @ 4.5V	5000pF @ 10V	±8V	-	840mW (Ta)	6.7 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTMFS4845NT1G	ON Semiconductor	MOSFET N-CH 30V 13.7A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock22,728	MOSFET (Metal Oxide)	30V	13.7A (Ta), 115A (Tc)	4.5V, 10V	2.5V @ 250µA	62nC @ 11.5V	3720pF @ 12V	±16V	-	890mW (Ta), 62.5W (Tc)	2.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SFT1342-TL-W	ON Semiconductor	MOSFET P-CH 60V 12A TP-FA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,712	MOSFET (Metal Oxide)	60V	12A (Ta)	4V, 10V	-	26nC @ 10V	1150pF @ 20V	±20V	-	1W (Ta), 15W (Tc)	62 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFS5C454NLTAG	ON Semiconductor	MOSFET N-CH 40V 20A WDFN8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,472	MOSFET (Metal Oxide)	40V	20A (Ta), 85A (Tc)	4.5V, 10V	2V @ 45µA	18nC @ 10V	1600pF @ 25V	±20V	-	3.2W (Ta), 55W (Tc)	3.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTMFS4835NT1G	ON Semiconductor	MOSFET N-CH 30V 12A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock193,572	MOSFET (Metal Oxide)	30V	13A (Ta), 130A (Tc)	4.5V, 11.5V	2.5V @ 250µA	52nC @ 11.5V	3100pF @ 12V	±20V	-	890mW (Ta), 62.5W (Tc)	3.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVF6P02T3G	ON Semiconductor	MOSFET P-CH 20V 10A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 8.3W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,100	MOSFET (Metal Oxide)	20V	10A (Ta)	2.5V, 4.5V	1V @ 250µA	20nC @ 4.5V	1200pF @ 16V	±8V	-	8.3W (Ta)	50 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NTF6P02T3G	ON Semiconductor	MOSFET P-CH 20V 10A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 8.3W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock573,996	MOSFET (Metal Oxide)	20V	10A (Ta)	2.5V, 4.5V	1V @ 250µA	20nC @ 4.5V	1200pF @ 16V	±8V	-	8.3W (Ta)	50 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTD24N06T4G	ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock452,088	MOSFET (Metal Oxide)	60V	24A (Ta)	10V	4V @ 250µA	48nC @ 10V	1200pF @ 25V	±20V	-	1.36W (Ta), 62.5W (Tj)	42 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NDD03N80ZT4G	ON Semiconductor	MOSFET N-CH 800V 2.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24,000	MOSFET (Metal Oxide)	800V	2.9A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	440pF @ 25V	±30V	-	96W (Tc)	4.5 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SVD2955T4G	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,960	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTLUS3A40PZTAG	ON Semiconductor	MOSFET P-CH 20V 4A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock134,508	MOSFET (Metal Oxide)	20V	4A (Ta)	1.5V, 4.5V	1V @ 250µA	29nC @ 4.5V	2600pF @ 15V	±8V	-	700mW (Ta)	29 mOhm @ 6.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
NTMFS4941NT1G	ON Semiconductor	MOSFET N-CH 30V 9A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 910mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock26,508	MOSFET (Metal Oxide)	30V	9A (Ta), 47A (Tc)	4.5V, 10V	2.2V @ 250µA	25.5nC @ 10V	1650pF @ 15V	±20V	-	910mW (Ta), 25.5W (Tc)	6.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTD2955T4G	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,394,460	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTHS4101PT1G	ON Semiconductor	MOSFET P-CH 20V 4.8A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock309,348	MOSFET (Metal Oxide)	20V	4.8A (Tj)	1.8V, 4.5V	1.5V @ 250µA	35nC @ 4.5V	2100pF @ 16V	±8V	-	1.3W (Ta)	34 mOhm @ 4.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NVR5198NLT1G	ON Semiconductor	MOSFET N-CH 60V 2.2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 155 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock420,756	MOSFET (Metal Oxide)	60V	1.7A (Ta)	4.5V, 10V	2.5V @ 250µA	5.1nC @ 10V	182pF @ 25V	±20V	-	900mW (Ta)	155 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTS4173PT1G	ON Semiconductor	MOSFET P-CH 30V 1.2A SC70-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,706,440	MOSFET (Metal Oxide)	30V	1.2A (Ta)	2.5V, 10V	1.5V @ 250µA	10.1nC @ 10V	430pF @ 15V	±12V	-	290mW (Ta)	150 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
MMBF2201NT1G	ON Semiconductor	MOSFET N-CH 20V 300MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock6,161,880	MOSFET (Metal Oxide)	20V	300mA (Ta)	4.5V, 10V	2.4V @ 250µA	-	45pF @ 5V	±20V	-	150mW (Ta)	1 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
MCH3474-TL-W	ON Semiconductor	MOSFET N-CH 30V 4A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock5,536	MOSFET (Metal Oxide)	30V	4A (Ta)	1.8V, 4.5V	1.3V @ 1mA	4.7nC @ 4.5V	430pF @ 10V	±12V	-	1W (Ta)	50 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads