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ON Semiconductor |
MOSFET N-CH 600V 3.5A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FI(LS)
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock99,000 |
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MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 5V @ 1mA | 11nC @ 10V | 260pF @ 30V | ±30V | - | 2W (Ta), 28W (Tc) | 3.25 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 5.5A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FI(LS)
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,400 |
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MOSFET (Metal Oxide) | 500V | 5.5A (Ta) | 10V | 5V @ 1mA | 14.6nC @ 10V | 360pF @ 30V | ±30V | - | 2W (Ta), 30W (Tc) | 1.56 Ohm @ 2.8A, 10V | 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 1500V 2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,648 |
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MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | 3.5V @ 1mA | 37.5nC @ 10V | 380pF @ 30V | ±20V | - | 80W (Tc) | 13 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 400V 12A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FI(LS)
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,840 |
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MOSFET (Metal Oxide) | 400V | 8.9A (Tc) | 10V | 5V @ 1mA | 24.5nC @ 10V | 650pF @ 30V | ±30V | - | 2W (Ta), 33W (Tc) | 540 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 8.5A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 940 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FI(LS)
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,968 |
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MOSFET (Metal Oxide) | 600V | 6.9A (Tc) | 10V | 5V @ 1mA | 29nC @ 10V | 750pF @ 30V | ±30V | - | 2W (Ta), 35W (Tc) | 940 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 40A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,904 |
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MOSFET (Metal Oxide) | 100V | 40A (Ta) | 4V, 10V | 2.6V @ 1mA | 79nC @ 10V | 4200pF @ 20V | ±20V | - | 1.75W (Ta), 60W (Tc) | 34 mOhm @ 20A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 26A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,088 |
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MOSFET (Metal Oxide) | 100V | 26A (Ta) | 4V, 10V | 2.6V @ 1mA | 42nC @ 10V | 2150pF @ 20V | ±20V | - | 1.75W (Ta), 45W (Tc) | 60 mOhm @ 13A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 60A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,168 |
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MOSFET (Metal Oxide) | 60V | 60A (Ta) | 4V, 10V | 2.6V @ 1mA | 67nC @ 10V | 3500pF @ 20V | ±20V | - | 1.75W (Ta), 60W (Tc) | 15 mOhm @ 30A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 40A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock32,400 |
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MOSFET (Metal Oxide) | 60V | 40A (Ta) | 4V, 10V | 2.6V @ 1mA | 40nC @ 10V | 1780pF @ 20V | ±20V | - | 1.75W (Ta), 45W (Tc) | 27.5 mOhm @ 20A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 40A SMP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SMP
- Package / Case: TO-220-3, Short Tab
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Package: TO-220-3, Short Tab |
Stock4,432 |
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MOSFET (Metal Oxide) | 100V | 40A (Ta) | 4V, 10V | 2.6V @ 1mA | 73nC @ 10V | 4200pF @ 20V | ±20V | - | 1.65W (Ta), 65W (Tc) | 33 mOhm @ 20A, 10V | 150°C (TJ) | Through Hole | SMP | TO-220-3, Short Tab |
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ON Semiconductor |
MOSFET N-CH 100V 40A SMP-FD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock60,000 |
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MOSFET (Metal Oxide) | 100V | 40A (Ta) | 4V, 10V | 2.6V @ 1mA | 73nC @ 10V | 4200pF @ 20V | ±20V | - | 1.65W (Ta), 65W (Tc) | 33 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 26A SMP-FD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,840 |
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MOSFET (Metal Oxide) | 100V | 26A (Ta) | 4V, 10V | - | 44nC @ 10V | 2150pF @ 20V | ±20V | - | 1.65W (Ta), 50W (Tc) | 60 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 60A SMP-FD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,632 |
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MOSFET (Metal Oxide) | 60V | 60A (Ta) | - | 2.6V @ 1mA | 67nC @ 10V | 3500pF @ 20V | - | - | 1.65W (Ta), 65W (Tc) | 15 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 40A SMP-FD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock17,520 |
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MOSFET (Metal Oxide) | 60V | 40A (Ta) | 4V, 10V | 2.6V @ 1mA | 40nC @ 10V | 1780pF @ 20V | ±20V | - | 1.65W (Ta), 50W (Tc) | 26 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 100V 27A SMP-FD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,704 |
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MOSFET (Metal Oxide) | 100V | 27A (Ta) | 4V, 10V | 2.6V @ 1mA | 74nC @ 10V | 4200pF @ 20V | ±20V | - | 1.65W (Ta), 65W (Tc) | 77 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 60V 38A SMP-FD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 19A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,416 |
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MOSFET (Metal Oxide) | 60V | 38A (Ta) | 4V, 10V | 2.6V @ 1mA | 80nC @ 10V | 4360pF @ 20V | ±20V | - | 1.65W (Ta), 65W (Tc) | 39 mOhm @ 19A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 75V 100A SMP-FD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,376 |
|
MOSFET (Metal Oxide) | 75V | 100A (Ta) | - | - | 280nC @ 10V | 13400pF @ 20V | - | - | 90W (Tc) | 8 mOhm @ 50A, 10V | - | Surface Mount | SMP-FD | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET N-CH 600V 1.5A TP-FA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 8.1 Ohm @ 800mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,216 |
|
MOSFET (Metal Oxide) | 600V | 1.5A (Ta) | 10V | - | 6.3nC @ 10V | 130pF @ 30V | ±30V | - | 1W (Ta), 20W (Tc) | 8.1 Ohm @ 800mA, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 1.5A TP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 8.1 Ohm @ 800mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,544 |
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MOSFET (Metal Oxide) | 600V | 1.5A (Ta) | 10V | - | 6.3nC @ 10V | 130pF @ 30V | ±30V | - | 1W (Ta), 20W (Tc) | 8.1 Ohm @ 800mA, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 35V 11A TP-FA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock128,400 |
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MOSFET (Metal Oxide) | 35V | 11A (Ta) | 4V, 10V | - | 17.3nC @ 10V | 960pF @ 20V | ±20V | - | 1W (Ta), 15W (Tc) | 25 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 2A TP-FA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock60,072 |
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MOSFET (Metal Oxide) | 500V | 2A (Ta) | 4V, 10V | - | 8.7nC @ 10V | 175pF @ 30V | ±20V | - | 1W (Ta), 20W (Tc) | 4.9 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 3.5A SCH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock7,552 |
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MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | - | 5.6nC @ 10V | 280pF @ 10V | ±20V | - | 1W (Ta) | 72 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 30V 2A SCH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock4,464 |
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MOSFET (Metal Oxide) | 30V | 2A (Ta) | 1.8V, 4.5V | - | 1.7nC @ 4.5V | 130pF @ 10V | ±12V | - | 800mW (Ta) | 165 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 12V 2.5A SCH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 112 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock2,304 |
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MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.8V, 4.5V | - | 3.1nC @ 4.5V | 270pF @ 6V | ±10V | - | 800mW (Ta) | 112 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 12V 3A SCH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock25,548 |
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MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | - | 5.6nC @ 4.5V | 405pF @ 6V | ±10V | - | 1W (Ta) | 84 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 60V 97A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,216 |
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MOSFET (Metal Oxide) | 60V | 97A (Tc) | 10V | 4V @ 250µA | 55nC @ 10V | 3200pF @ 25V | ±20V | - | 150W (Tc) | 7.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 35V 2.5A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock6,560 |
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MOSFET (Metal Oxide) | 35V | 2.5A (Ta) | 4V, 10V | - | 4nC @ 10V | 186pF @ 20V | ±20V | - | 800mW (Ta) | 98 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 30V 6A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock36,000 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta) | 1.8V, 4.5V | - | 7.5nC @ 4.5V | 710pF @ 10V | ±12V | - | 1.5W (Ta) | 34 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |