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ON Semiconductor |
MOSFET N-CH 600V 3.3A TO-220F-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,464 |
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MOSFET (Metal Oxide) | 600V | 3.3A (Tc) | 10V | - | 11nC @ 10V | 260pF @ 30V | ±30V | - | 2W (Ta), 28W (Tc) | 3.25 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 20V 3.5A SCH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock5,408 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | - | 11nC @ 4.5V | 1220pF @ 10V | ±10V | - | 1W (Ta) | 72 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 20V 2A SCH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock660,000 |
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MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | - | 3.3nC @ 4.5V | 250pF @ 10V | ±10V | - | 800mW (Ta) | 130 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 20V 8A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 10V
- Vgs (Max): ±9V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock36,000 |
|
MOSFET (Metal Oxide) | 20V | 8A (Ta) | 1.2V, 4.5V | - | 11.2nC @ 4.5V | 705pF @ 10V | ±9V | - | 1.5W (Ta) | 22 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET P-CH 30V 5A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,888 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | - | 10nC @ 10V | 430pF @ 10V | ±20V | - | 1.5W (Ta) | 59 mOhm @ 3A, 10V | - | Surface Mount | 6-MCPH | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 20V 2A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
- Vgs (Max): ±9V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 104 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock39,000 |
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MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.2V, 4.5V | - | 2.9nC @ 4.5V | 175pF @ 10V | ±9V | - | 800mW (Ta) | 104 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 30V 4A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock3,712 |
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MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 4.5V | - | 4.7nC @ 4.5V | 430pF @ 10V | ±12V | - | 1W (Ta) | 50 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 12V 2A MCPH3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6V
- Vgs (Max): ±9V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock414,252 |
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MOSFET (Metal Oxide) | 12V | 2A (Ta) | 1.8V, 4.5V | - | 2.3nC @ 4.5V | 170 pF @ 6V | ±9V | - | 800mW (Ta) | 198 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 30V 1.6A MCPH3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 295 mOhm @ 800mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock2,736 |
|
MOSFET (Metal Oxide) | 30V | 1.6A (Tc) | 4V, 10V | - | 2.2nC @ 10V | 82pF @ 10V | ±20V | - | 800mW (Ta) | 295 mOhm @ 800mA, 10V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 30V 3A CPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 169 mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock21,228 |
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MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4V, 10V | - | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 1.6W (Ta) | 169 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 30V 1.6A CPH3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 303 mOhm @ 800mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,504 |
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MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 4V, 10V | - | 2.2nC @ 10V | 82pF @ 10V | ±20V | - | 900mW (Ta) | 303 mOhm @ 800mA, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 50V 70MA SSFP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-SSFP
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock3,120 |
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MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 150mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Surface Mount | 3-SSFP | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 50V 70MA SMCP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock5,680 |
|
MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 150mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
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ON Semiconductor |
MOSFET N-CH 50V 100MA SMCP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock325,464 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | - | 1.57nC @ 10V | 6.6pF @ 10V | ±10V | - | 150mW (Ta) | 7.8 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
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ON Semiconductor |
MOSFET N-CH 50V 100MA CP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CP
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,736 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | - | 1.57nC @ 10V | 6.6pF @ 10V | ±10V | - | 250mW (Ta) | 7.8 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | 3-CP | TO-236-3, SC-59, SOT-23-3 |
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|
ON Semiconductor |
MOSFET N-CH 30V 6.9A DPAK-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock120,360 |
|
MOSFET (Metal Oxide) | 30V | 6.9A (Ta), 35A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 6.6nC @ 4.5V | 770pF @ 12V | ±20V | - | 1.26W (Ta), 32.6W (Tc) | 15 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET N-CH 40V 21A TP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 10.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,104 |
|
MOSFET (Metal Oxide) | 40V | 21A (Ta) | 10V | - | 14.4nC @ 10V | 715pF @ 20V | ±20V | - | 1W (Ta), 23W (Tc) | 28 mOhm @ 10.5A, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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|
ON Semiconductor |
MOSFET N-CH 100V 9A TP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 225 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,248 |
|
MOSFET (Metal Oxide) | 100V | 9A (Ta) | 4V, 10V | - | 9.8nC @ 10V | 490pF @ 20V | ±20V | - | 1W (Ta), 19W (Tc) | 225 mOhm @ 3A, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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|
ON Semiconductor |
MOSFET N-CH 35V 11A TP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,184 |
|
MOSFET (Metal Oxide) | 35V | 11A (Ta) | 4V, 10V | - | 17.3nC @ 10V | 960pF @ 20V | ±20V | - | 1W (Ta), 15W (Tc) | 25 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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|
ON Semiconductor |
MOSFET N-CH 500V 2A TP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,168 |
|
MOSFET (Metal Oxide) | 500V | 2A (Ta) | 4V, 10V | - | 8.7nC @ 10V | 175pF @ 30V | ±20V | - | 1W (Ta), 20W (Tc) | 4.9 Ohm @ 1A, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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|
ON Semiconductor |
MOSFET P-CH 40V 19A TP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,856 |
|
MOSFET (Metal Oxide) | 40V | 19A (Ta) | 4.5V, 10V | - | 12nC @ 10V | 590pF @ 20V | ±20V | - | 1W (Ta), 23W (Tc) | 59 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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|
ON Semiconductor |
MOSFET N-CH 30V 12.7A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock52,404 |
|
MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 100A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 53nC @ 11.5V | 3250pF @ 12V | ±20V | - | 890mW (Ta), 55.5W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 9.5A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2354pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock429,552 |
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MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 64A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 43.5nC @ 11.5V | 2354pF @ 12V | ±20V | - | 870mW (Ta), 42.4W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET P-CH 60V 12A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tj)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock182,400 |
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MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 750pF @ 25V | ±20V | - | 55W (Tj) | 180 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 10.3A SGL DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock658,920 |
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MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 24nC @ 10V | 1932pF @ 15V | ±20V | - | 1.38W (Ta), 37.5W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 11.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock340,752 |
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MOSFET (Metal Oxide) | 30V | 11.3A (Ta), 79A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 23nC @ 4.5V | 2142pF @ 12V | ±20V | - | 1.4W (Ta), 68W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET N-CH 60V 220A TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 283W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,808 |
|
MOSFET (Metal Oxide) | 60V | 220A (Tc) | 4.5V, 10V | 4V @ 250µA | 180nC @ 10V | 10760pF @ 25V | ±20V | - | 283W (Tc) | 3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
ON Semiconductor |
MOSFET N-CH 30V 3.5A 6-TSOP
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,856 |
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