Page 25 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP45N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 34A

Package: TO-220-3

Stock16,056
STF33N60M2
STMicroelectronics

MOSFET N-CH 600V 26A TO220FP

Package: TO-220-3 Full Pack

Stock3,808
STF43N60DM2
STMicroelectronics

MOSFET N-CH 600V 34A

Package: TO-220-3 Full Pack

Stock22,044
STP27N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 20A TO-220

Package: TO-220-3

Stock21,516
STW23N80K5
STMicroelectronics

MOSFET N-CH 800V 16A

Package: TO-247-3

Stock6,324
STP35N60DM2
STMicroelectronics

MOSFET N-CH 600V 28A

Package: TO-220-3

Stock6,876
STF35N60DM2
STMicroelectronics

MOSFET N-CH 600V 28A

Package: TO-220-3 Full Pack

Stock18,528
STFI15N95K5
STMicroelectronics

N-CHANNEL 950 V, 0.41 OHM TYP.,

Package: TO-262-3 Full Pack, I2Pak

Stock6,144
STW3N170
STMicroelectronics

N-CHANNEL 1700 V, 7 OHM TYP., 2.

Package: TO-247-3

Stock9,840
STFU13N80K5
STMicroelectronics

MOSFET N-CH 800V 12A TO220FP

Package: TO-220-3 Full Pack

Stock17,832
STP23N80K5
STMicroelectronics

MOSFET N-CH 800V 16A

Package: TO-220-3

Stock7,692
STF23N80K5
STMicroelectronics

MOSFET N-CH 800V 16A

Package: TO-220-3 Full Pack

Stock6,876
STFU28N65M2
STMicroelectronics

MOSFET N-CH 650V 20A

Package: TO-220-3 Full Pack

Stock7,728
STF33N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.105 OHM TYP.,

Package: TO-220-3 Full Pack

Stock19,200
STFU15N80K5
STMicroelectronics

MOSFET N-CH 800V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock7,692
STF12NM50ND
STMicroelectronics

MOSFET N-CH 500V 11A TO-220FP

Package: TO-220-3 Full Pack

Stock14,478
STP12NM50FP
STMicroelectronics

MOSFET N-CH 500V 12A TO220FP

Package: TO-220-3 Full Pack

Stock558,624
STFU15NM65N
STMicroelectronics

MOSFET N-CH 650V 12A TO-220FP

Package: TO-220-3 Full Pack

Stock9,408
STP220N6F7
STMicroelectronics

MOSFET N-CH 60V 120A TO-220

Package: TO-220-3

Stock19,920
STF26N60M2
STMicroelectronics

MOSFET N-CH 600V 20A TO-220FP

Package: TO-220-3 Full Pack

Stock21,744

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP45N60DM2AG	STMicroelectronics	MOSFET N-CH 600V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock16,056	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	5V @ 250µA	56nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	93 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF33N60M2	STMicroelectronics	MOSFET N-CH 600V 26A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,808	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	4V @ 250µA	45.5nC @ 10V	1781pF @ 100V	±25V	-	35W (Tc)	125 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF43N60DM2	STMicroelectronics	MOSFET N-CH 600V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,044	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	5V @ 250µA	56nC @ 10V	2500pF @ 100V	±25V	-	40W (Tc)	93 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP27N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 163 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock21,516	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	33nC @ 10V	1320pF @ 100V	±25V	-	170W (Tc)	163 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STW23N80K5	STMicroelectronics	MOSFET N-CH 800V 16A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,324	MOSFET (Metal Oxide)	800V	16A (Tc)	10V	5V @ 100µA	33nC @ 10V	1000pF @ 100V	±30V	-	190W (Tc)	280 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP35N60DM2	STMicroelectronics	MOSFET N-CH 600V 28A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,876	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	5V @ 250µA	54nC @ 10V	2400pF @ 100V	±25V	-	210W (Tc)	110 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF35N60DM2	STMicroelectronics	MOSFET N-CH 600V 28A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,528	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	5V @ 250µA	54nC @ 10V	2400pF @ 100V	±25V	-	40W (Tc)	110 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFI15N95K5	STMicroelectronics	N-CHANNEL 950 V, 0.41 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 30W Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock6,144	MOSFET (Metal Oxide)	950V	7.5A (Ta)	10V	5V @ 100µA	30nC @ 10V	855pF @ 10V	±30V	Current Sensing	30W	500 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STW3N170	STMicroelectronics	N-CHANNEL 1700 V, 7 OHM TYP., 2. FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160mW Rds On (Max) @ Id, Vgs: 13 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,840	MOSFET (Metal Oxide)	1700V	2.6A (Tc)	10V	5V @ 250µA	44nC @ 10V	1100pF @ 100V	±30V	-	160mW	13 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STFU13N80K5	STMicroelectronics	MOSFET N-CH 800V 12A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,832	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 100µA	29nC @ 10V	870pF @ 100V	±30V	-	35W (Tc)	450 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP23N80K5	STMicroelectronics	MOSFET N-CH 800V 16A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,692	MOSFET (Metal Oxide)	800V	16A (Tc)	10V	5V @ 100µA	33nC @ 10V	1000pF @ 100V	±30V	-	190W (Tc)	280 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STF23N80K5	STMicroelectronics	MOSFET N-CH 800V 16A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,876	MOSFET (Metal Oxide)	800V	16A (Tc)	10V	5V @ 100µA	33nC @ 10V	1000pF @ 100V	±30V	-	35W (Tc)	280 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFU28N65M2	STMicroelectronics	MOSFET N-CH 650V 20A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,728	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	4V @ 250µA	35nC @ 10V	1440pF @ 100V	±25V	-	30W (Tc)	180 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF33N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.105 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,200	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	5V @ 250µA	43nC @ 10V	1870pF @ 100V	±25V	-	35W (Tc)	130 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFU15N80K5	STMicroelectronics	MOSFET N-CH 800V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 375 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,692	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 100µA	32nC @ 10V	1100pF @ 100V	±30V	-	35W (Tc)	375 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF12NM50ND	STMicroelectronics	MOSFET N-CH 500V 11A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,478	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	5V @ 250µA	30nC @ 10V	850pF @ 50V	±25V	-	25W (Tc)	380 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP12NM50FP	STMicroelectronics	MOSFET N-CH 500V 12A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock558,624	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	5V @ 50µA	39nC @ 10V	1000pF @ 25V	±30V	-	35W (Tc)	350 mOhm @ 6A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFU15NM65N	STMicroelectronics	MOSFET N-CH 650V 12A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,408	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	33.3nC @ 10V	983pF @ 50V	±25V	-	30W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP220N6F7	STMicroelectronics	MOSFET N-CH 60V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 237W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,920	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	100nC @ 10V	6400pF @ 25V	±20V	-	237W (Tc)	2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STF26N60M2	STMicroelectronics	MOSFET N-CH 600V 20A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock21,744	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	-	-	±25V	-	30W (Tc)	165 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFI26N60M2	STMicroelectronics	MOSFET N-CH 600V 20A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock16,302	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	-	-	±25V	-	30W (Tc)	165 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STB80NF55-06-1	STMicroelectronics	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock18,708	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	189nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STF27N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 20A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 163 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,260	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	33nC @ 10V	1320pF @ 100V	±25V	-	30W (Tc)	163 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW10NK60Z	STMicroelectronics	MOSFET N-CH 600V 10A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock104,280	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	70nC @ 10V	1370pF @ 25V	±30V	-	156W (Tc)	750 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW6N90K5	STMicroelectronics	N-CHANNEL 900 V, 2.1 OHM TYP., 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock12,492	MOSFET (Metal Oxide)	900V	-	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STFU13N65M2	STMicroelectronics	MOSFET N-CH 650V 10A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,840	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	±25V	-	25W (Tc)	430 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP170N8F7	STMicroelectronics	MOSFET N-CH 80V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8710pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,072	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4.5V @ 250µA	120nC @ 10V	8710pF @ 40V	±20V	-	250W (Tc)	3.9 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STF10LN80K5	STMicroelectronics	MOSFET N-CH 800V 8A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,016	MOSFET (Metal Oxide)	800V	8A (Tc)	10V	5V @ 100µA	15nC @ 10V	427pF @ 100V	±30V	-	25W (Tc)	630 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack