Page 62 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STU4N80K5
STMicroelectronics

MOSFET N-CH 800V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,952
STP30N10F7
STMicroelectronics

MOSFET N-CH 100V 30A TO220

Package: TO-220-3

Stock6,912
STD40NF03LT4
STMicroelectronics

MOSFET N-CH 30V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock811,812
STP9NK70Z
STMicroelectronics

MOSFET N-CH 700V 7.5A TO-220

Package: TO-220-3

Stock153,132
STL200N45LF7
STMicroelectronics

MOSFET N-CH 45V 120A POWERFLAT

Package: 8-PowerVDFN

Stock5,520
STD15N50M2AG
STMicroelectronics

MOSFET N-CH 500V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,192
STL5N80K5
STMicroelectronics

MOSFET N-CH 800V 3A POWERFLAT

Package: 8-PowerVDFN

Stock2,080
STDLED625
STMicroelectronics

MOSFET N-CH 620V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,248
STD10N60M2
STMicroelectronics

MOSFET N-CH 600V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,768
STD3NM60N
STMicroelectronics

MOSFET N-CH 600V 3.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,732
STP6NK60Z
STMicroelectronics

MOSFET N-CH 600V 6A TO-220

Package: TO-220-3

Stock448,584
STD3NK50Z-1
STMicroelectronics

MOSFET N-CH 500V 2.3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock926,184
STP45NF3LL
STMicroelectronics

MOSFET N-CH 30V 45A TO-220

Package: TO-220-3

Stock510,852
STU9N60M2
STMicroelectronics

MOSFET N-CH 600V 5.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,928
STI4N62K3
STMicroelectronics

MOSFET N-CH 620V 3.8A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,032
STP6NK60ZFP
STMicroelectronics

MOSFET N-CH 600V 6A TO-220FP

Package: TO-220-3 Full Pack

Stock813,564
STP52P3LLH6
STMicroelectronics

MOSFET N-CH 30V 52A TO220

Package: TO-220-3

Stock3,408
STP2N80K5
STMicroelectronics

MOSFET N-CH 800V 2A TO220

Package: TO-220-3

Stock6,368
STF8N60DM2
STMicroelectronics

MOSFET N-CH 600V 8A TO220FP

Package: TO-220-3 Full Pack

Stock7,056
STD4NK60Z-1
STMicroelectronics

MOSFET N-CH 600V 4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock223,380

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STU4N80K5	STMicroelectronics	MOSFET N-CH 800V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,952	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	10.5nC @ 10V	175pF @ 100V	±30V	-	60W (Tc)	2.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STP30N10F7	STMicroelectronics	MOSFET N-CH 100V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,912	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4.5V @ 250µA	19nC @ 10V	1270pF @ 50V	±20V	-	50W (Tc)	24 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD40NF03LT4	STMicroelectronics	MOSFET N-CH 30V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock811,812	MOSFET (Metal Oxide)	30V	40A (Tc)	5V, 10V	1V @ 250µA	30nC @ 5V	1440pF @ 25V	±20V	-	80W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STP9NK70Z	STMicroelectronics	MOSFET N-CH 700V 7.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock153,132	MOSFET (Metal Oxide)	700V	7.5A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1370pF @ 25V	±30V	-	115W (Tc)	1.2 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STL200N45LF7	STMicroelectronics	MOSFET N-CH 45V 120A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,520	MOSFET (Metal Oxide)	45V	120A (Tc)	4.5V, 10V	1.2V @ 250µA	33nC @ 4.5V	5170pF @ 25V	±20V	-	150W (Tc)	1.8 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STD15N50M2AG	STMicroelectronics	MOSFET N-CH 500V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,192	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	13nC @ 10V	530pF @ 100V	±30V	-	85W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL5N80K5	STMicroelectronics	MOSFET N-CH 800V 3A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,080	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	5nC @ 10V	177pF @ 100V	±30V	-	38W (Tc)	1.75 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STDLED625	STMicroelectronics	MOSFET N-CH 620V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,248	MOSFET (Metal Oxide)	620V	5A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	890pF @ 50V	±30V	-	70W (Tc)	1.6 Ohm @ 2.1A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD10N60M2	STMicroelectronics	MOSFET N-CH 600V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,768	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	13.5nC @ 10V	400pF @ 100V	±25V	-	85W (Tc)	600 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NM60N	STMicroelectronics	MOSFET N-CH 600V 3.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,732	MOSFET (Metal Oxide)	600V	3.3A (Tc)	10V	4V @ 250µA	9.5nC @ 10V	188pF @ 50V	±25V	-	50W (Tc)	1.8 Ohm @ 1.65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STP6NK60Z	STMicroelectronics	MOSFET N-CH 600V 6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock448,584	MOSFET (Metal Oxide)	600V	6A (Tc)	10V	4.5V @ 100µA	46nC @ 10V	905pF @ 25V	±30V	-	110W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD3NK50Z-1	STMicroelectronics	MOSFET N-CH 500V 2.3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock926,184	MOSFET (Metal Oxide)	500V	2.3A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	3.3 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP45NF3LL	STMicroelectronics	MOSFET N-CH 30V 45A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock510,852	MOSFET (Metal Oxide)	30V	45A (Tc)	4.5V, 10V	1V @ 250µA	17nC @ 5V	800pF @ 25V	±16V	-	70W (Tc)	18 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STU9N60M2	STMicroelectronics	MOSFET N-CH 600V 5.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,928	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	10nC @ 10V	320pF @ 100V	±25V	-	60W (Tc)	780 mOhm @ 3A, 10V	150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STI4N62K3	STMicroelectronics	MOSFET N-CH 620V 3.8A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,032	MOSFET (Metal Oxide)	620V	3.8A (Tc)	10V	4.5V @ 50µA	22nC @ 10V	550pF @ 50V	±30V	-	70W (Tc)	2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP6NK60ZFP	STMicroelectronics	MOSFET N-CH 600V 6A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock813,564	MOSFET (Metal Oxide)	600V	6A (Tc)	10V	4.5V @ 100µA	46nC @ 10V	905pF @ 25V	±30V	-	30W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP52P3LLH6	STMicroelectronics	MOSFET N-CH 30V 52A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 52A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,408	MOSFET (Metal Oxide)	30V	52A	4.5V, 10V	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
STP2N80K5	STMicroelectronics	MOSFET N-CH 800V 2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,368	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 100µA	3nC @ 10V	95pF @ 100V	30V	-	45W (Tc)	4.5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF8N60DM2	STMicroelectronics	MOSFET N-CH 600V 8A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 449pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,056	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	13.5nC @ 10V	449pF @ 100V	±25V	-	25W (Tc)	600 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD4NK60Z-1	STMicroelectronics	MOSFET N-CH 600V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock223,380	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	510pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP14NF12FP	STMicroelectronics	MOSFET N-CH 120V 8.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock625,608	MOSFET (Metal Oxide)	120V	8.5A (Tc)	10V	4V @ 250µA	21nC @ 10V	460pF @ 25V	±20V	-	25W (Tc)	180 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STB3NK60ZT4	STMicroelectronics	MOSFET N-CH 600V 2.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock117,828	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	4.5V @ 50µA	11.8nC @ 10V	311pF @ 25V	±30V	-	45W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STPLED524	STMicroelectronics	MOSFET N-CH 525V 4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,240	MOSFET (Metal Oxide)	525V	4A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	340pF @ 100V	±30V	-	45W (Tc)	2.6 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB6N65K3	STMicroelectronics	MOSFET N-CH 650V D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP62NS04Z	STMicroelectronics	MOSFET N-CH 33V 62A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 25V Vgs (Max): Clamped FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock951,168	MOSFET (Metal Oxide)	33V	62A (Tc)	10V	4V @ 250µA	47nC @ 10V	1330pF @ 25V	Clamped	-	110W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD60NF55LAT4	STMicroelectronics	MOSFET N-CH 55V 60A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock351,480	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STL3N80K5	STMicroelectronics	MOSFET N-CH 800V 2.5A POWERFLAT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,696	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP14NF12	STMicroelectronics	MOSFET N-CH 120V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock72,084	MOSFET (Metal Oxide)	120V	14A (Tc)	10V	4V @ 250µA	21nC @ 10V	460pF @ 25V	±20V	-	60W (Tc)	180 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3