Page 63 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP180N4F6
STMicroelectronics

MOSFET N-CH 40V 120A TO220

Package: TO-220-3

Stock5,072
STF11N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 7.5A TO220FP

Package: TO-220-3 Full Pack

Stock2,720
STH52N10LF3-2AG
STMicroelectronics

MOSFET N-CH 100V 52A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,904
STL210N4F7AG
STMicroelectronics

MOSFET N-CH 40V 120A POWERFLAT

Package: 8-PowerVDFN

Stock4,288
STL90N3LLH6
STMicroelectronics

MOSFET N-CH 30V 24A POWERFLAT5X6

Package: 8-PowerVDFN

Stock6,060
STP130N8F7
STMicroelectronics

MOSFET N-CH 80V 80A TO220

Package: TO-220-3

Stock3,312
STI175N4F6AG
STMicroelectronics

MOSFET N-CH 40V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,888
STP19NF20
STMicroelectronics

MOSFET N-CH 200V 15A TO-220

Package: TO-220-3

Stock1,366,440
STL11N60M2-EP
STMicroelectronics

MOSFET N-CH 600V PWRFLAT 5X6

Package: -

Stock2,160
STP12N65M2
STMicroelectronics

POWER MOSFET

Package: -

Stock3,344
STP6N65M2
STMicroelectronics

MOSFET N-CH 650V 4A TO-220AB

Package: TO-220-3

Stock6,368
STB140N4F6
STMicroelectronics

MOSFET N-CH 40V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,736
STP70N10F4
STMicroelectronics

MOSFET N-CH 100V 65A TO-220

Package: TO-220-3

Stock61,908
STD80N4F6
STMicroelectronics

MOSFET N-CH 40V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock930,000
STP140N4F6
STMicroelectronics

MOSFET N-CH 40V 80A TO220

Package: TO-220-3

Stock3,296
STF5N60M2
STMicroelectronics

MOSFET N-CH 600V 3.7A TO220FP

Package: TO-220-3 Full Pack

Stock4,960
STP7NK40ZFP
STMicroelectronics

MOSFET N-CH 400V 5.4A TO-220FP

Package: TO-220-3 Full Pack

Stock83,100
STD7N52K3
STMicroelectronics

MOSFET N-CH 525V 6.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,536
STD95P3LLH6AG
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Package: -

Stock4,992
STD13NM50N
STMicroelectronics

MOSFET N-CH 500V DPAK

Package: -

Stock3,136

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP180N4F6	STMicroelectronics	MOSFET N-CH 40V 120A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,072	MOSFET (Metal Oxide)	40V	120A	4.5V, 10V	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
STF11N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 7.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 595 mOhm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,720	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	12.4nC @ 10V	390pF @ 100V	±25V	-	25W (Tc)	595 mOhm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STH52N10LF3-2AG	STMicroelectronics	MOSFET N-CH 100V 52A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,904	MOSFET (Metal Oxide)	100V	52A (Tc)	5V, 10V	2.5V @ 250µA	18.5nC @ 5V	1900pF @ 400V	±20V	-	110W (Tc)	20 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL210N4F7AG	STMicroelectronics	MOSFET N-CH 40V 120A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,288	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	43nC @ 10V	3600pF @ 25V	±20V	-	150W (Tc)	1.6 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STL90N3LLH6	STMicroelectronics	MOSFET N-CH 30V 24A POWERFLAT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,060	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	1V @ 250µA	17nC @ 4.5V	1690pF @ 25V	±20V	-	60W (Tc)	4.5 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STP130N8F7	STMicroelectronics	MOSFET N-CH 80V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,312	MOSFET (Metal Oxide)	80V	80A	4.5V, 10V	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
STI175N4F6AG	STMicroelectronics	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7735pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,888	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4.5V @ 250µA	130nC @ 10V	7735pF @ 20V	±20V	-	190W (Tc)	2.7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
STP19NF20	STMicroelectronics	MOSFET N-CH 200V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,366,440	MOSFET (Metal Oxide)	200V	15A (Tc)	10V	4V @ 250µA	24nC @ 10V	800pF @ 25V	±20V	-	90W (Tc)	160 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STL11N60M2-EP	STMicroelectronics	MOSFET N-CH 600V PWRFLAT 5X6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,160	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP12N65M2	STMicroelectronics	POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,344	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP6N65M2	STMicroelectronics	MOSFET N-CH 650V 4A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,368	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4V @ 250µA	9.8nC @ 10V	226pF @ 100V	±25V	-	60W (Tc)	1.35 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB140N4F6	STMicroelectronics	MOSFET N-CH 40V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,736	MOSFET (Metal Oxide)	40V	80A	4.5V, 10V	-	-	-	-	-	-	-	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP70N10F4	STMicroelectronics	MOSFET N-CH 100V 65A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock61,908	MOSFET (Metal Oxide)	100V	65A (Tc)	10V	4V @ 250µA	85nC @ 10V	5800pF @ 25V	±20V	-	150W (Tc)	19.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STD80N4F6	STMicroelectronics	MOSFET N-CH 40V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock930,000	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	36nC @ 10V	2150pF @ 25V	±20V	-	70W (Tc)	6 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STP140N4F6	STMicroelectronics	MOSFET N-CH 40V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,296	MOSFET (Metal Oxide)	40V	80A	4.5V, 10V	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
STF5N60M2	STMicroelectronics	MOSFET N-CH 600V 3.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,960	MOSFET (Metal Oxide)	600V	3.7A (Tc)	10V	4V @ 250µA	4.5nC @ 10V	165pF @ 100V	±25V	-	20W (Tc)	1.4 Ohm @ 1.85A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP7NK40ZFP	STMicroelectronics	MOSFET N-CH 400V 5.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock83,100	MOSFET (Metal Oxide)	400V	5.4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	535pF @ 25V	±30V	-	25W (Tc)	1 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD7N52K3	STMicroelectronics	MOSFET N-CH 525V 6.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 737pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,536	MOSFET (Metal Oxide)	525V	6A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	737pF @ 100V	±30V	-	90W (Tc)	980 mOhm @ 3.1A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD95P3LLH6AG	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,992	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STD13NM50N	STMicroelectronics	MOSFET N-CH 500V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,136	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STFI9N60M2	STMicroelectronics	MOSFET N-CH 600V 5.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,936	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	10nC @ 10V	320pF @ 100V	±25V	-	20W (Tc)	780 mOhm @ 3A, 10V	150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-251-3 Short Leads, IPak, TO-251AA
STL11N3LLH6	STMicroelectronics	MOSFET N-CH 30V 11A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock281,964	MOSFET (Metal Oxide)	30V	11A (Tc)	4.5V, 10V	1V @ 250µA (Min)	17nC @ 4.5V	1690pF @ 24V	±20V	-	2W (Ta), 50W (Tc)	7.5 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STL160N4F7	STMicroelectronics	MOSFET N-CH 40V 120A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,480	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	29nC @ 10V	2300pF @ 25V	±20V	-	111W (Tc)	2.5 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STD2NK90Z-1	STMicroelectronics	MOSFET N-CH 900V 2.1A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock54,456	MOSFET (Metal Oxide)	900V	2.1A (Tc)	10V	4.5V @ 50µA	27nC @ 10V	485pF @ 25V	±30V	-	70W (Tc)	6.5 Ohm @ 1.05A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD30NF04LT	STMicroelectronics	MOSFET N-CH 40V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock642,120	MOSFET (Metal Oxide)	40V	30A (Tc)	5V, 10V	2.5V @ 250µA	25nC @ 10V	720pF @ 25V	±20V	-	50W (Tc)	30 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STL10HN65M2	STMicroelectronics	POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,152	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STULED625	STMicroelectronics	MOSFET N-CH 620V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,856	MOSFET (Metal Oxide)	620V	5A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	890pF @ 50V	±30V	-	70W (Tc)	1.6 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD5N62K3	STMicroelectronics	MOSFET N-CH 620V 4.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	620V	4.2A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	680pF @ 50V	±30V	-	70W (Tc)	1.6 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63