Page 2 - Toshiba Semiconductor and Storage Products - Diodes - Rectifiers - Single

CRS15I30A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A S-FLAT

Package: -

Stock8,940
CMG06-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A M-FLAT

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CUHS15F60-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1.5A US2H

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Stock8,970
CUHS20F30-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A US2H

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Stock18,303
CMH08-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 2A M-FLAT

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CUHS15F30-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

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Stock25,950
TRS12A65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 12A TO220F

Package: -

Stock150
1N4148WT-H3F-B
Toshiba Semiconductor and Storage

100 V/0.25 A SWITCHING DIODE, SO

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Stock23,925
CRS01-TE85L
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

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CTS05F40-L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 500MA CST2

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Stock10,599
TRS12E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 12A TO-220-2L

Package: -

Stock1,134
CRS20I40B-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A S-FLAT

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Stock2,514
CMC02-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

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CRS30I30A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A S-FLAT

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Stock7,947
TRS8E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 8A TO220-2L

Package: -

Stock12
1SS403E-L3F
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA ESC

Package: -

Stock12,159
TRS10V65H-LQ
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 10A DFN8X8

Package: -

Stock14,625
TRS2E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 2A TO-220-2L

Package: -

Stock900
CMS15I40A-TE12L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A M-FLAT

Package: -

Stock9,000
CMH01-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 3A M-FLAT

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Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CRS15I30A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 30 V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock8,940	30 V	1.5A	460 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 30 V	50pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CMG06-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CUHS15F60-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 1.5A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C	Package: -	Stock8,970	60 V	1.5A	730 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	130pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C
CUHS20F30-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 30 V Capacitance @ Vr, F: 380pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max)	Package: -	Stock18,303	30 V	2A	470 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 30 V	380pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CMH08-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 2A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	400 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	10 µA @ 400 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CUHS15F30-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C	Package: -	Stock25,950	30 V	1.5A	520 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	170pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C
TRS12A65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 12A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 650 V Capacitance @ Vr, F: 44pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: 175°C (Max)	Package: -	Stock150	650 V	12A	1.6 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	44pF @ 650V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F-2L	175°C (Max)
1N4148WT-H3F-B	Toshiba Semiconductor and Storage	100 V/0.25 A SWITCHING DIODE, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 200 nA @ 80 V Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 150°C	Package: -	Stock23,925	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	200 nA @ 80 V	0.5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	150°C
CRS01-TE85L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote	30 V	1A	360 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 30 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CTS05F40-L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 40 V Capacitance @ Vr, F: 28pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 150°C (Max)	Package: -	Stock10,599	40 V	500mA	810 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	15 µA @ 40 V	28pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	150°C (Max)
TRS12E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 12A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 650 V Capacitance @ Vr, F: 778pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	Package: -	Stock1,134	650 V	12A	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	778pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C
CRS20I40B-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock2,514	40 V	2A	520 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	62pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CMC02-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS30I30A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock7,947	30 V	3A	490 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	82pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
TRS8E65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 8A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 28pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	Package: -	Stock12	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	28pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
1SS403E-L3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 100MA ESC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max)	Package: -	Stock12,159	200 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	60 ns	1 µA @ 200 V	3pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	150°C (Max)
TRS10V65H-LQ	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 10A DFN8X8 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 649pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C	Package: -	Stock14,625	650 V	10A	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	Surface Mount	4-VSFN Exposed Pad	4-DFN-EP (8x8)	175°C
TRS2E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 2A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 135pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	Package: -	Stock900	650 V	2A	1.35 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	135pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C
CMS15I40A-TE12L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A M-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock9,000	40 V	1.5A	490 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	62pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	150°C (Max)
CMH01-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	200 V	3A	980 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	10 µA @ 200 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS04-TE85L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	40 V	1A	510 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CUS10F40-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 40 V Capacitance @ Vr, F: 74pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 150°C (Max)	Package: -	Stock17,970	40 V	1A	670 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 40 V	74pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	150°C (Max)
CUS03-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 700MA US-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 520 mV @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 45pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	40 V	700mA	520 mV @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	45pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
TRS12V65H-LQ	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 12A DFN8X8 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 650 V Capacitance @ Vr, F: 778pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C	Package: -	Stock14,886	650 V	12A	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	778pF @ 1V, 1MHz	Surface Mount	4-VSFN Exposed Pad	4-DFN-EP (8x8)	175°C
CMS01-TE12L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote	30 V	3A	370 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 30 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CUHS20S40-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 40 V Capacitance @ Vr, F: 290pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max)	Package: -	Stock112,413	40 V	2A	470 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 40 V	290pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CMS30I40A-TE12L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 3A M-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock9,000	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	62pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	150°C (Max)
TRS12E65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 12A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 650 V Capacitance @ Vr, F: 65pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	Package: -	Stock9	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	65pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)