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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 45V 100MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 10V
- Capacitance @ Vr, F: 18pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: -40°C ~ 100°C
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Package: SC-79, SOD-523 |
Stock92,400 |
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45V | 100mA | 600mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10V | 18pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | -40°C ~ 100°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock2,176 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock3,616 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock7,472 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock2,416 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock2,112 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock5,856 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock4,448 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock3,952 |
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60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock7,600 |
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40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock6,976 |
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40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock7,296 |
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40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock2,208 |
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40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock7,632 |
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40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: 530pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock5,376 |
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30V | 10A (DC) | 0.47V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 530pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |