Page 5 - Toshiba Semiconductor and Storage Products - Diodes - Rectifiers - Single

CMS05(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

Package: SOD-128

Stock66,468
CMS04(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

Package: SOD-128

Stock373,026
CMS01(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

Package: SOD-128

Stock3,360
CMS11(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A MFLAT

Package: SOD-128

Stock180,000
CMS06(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A MFLAT

Package: SOD-128

Stock11,208
CRH01(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A SFLAT

Package: SOD-123F

Stock36,000
CRS04(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A SFLAT

Package: SOD-123F

Stock552,312
CUS10S30,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USC

Package: SC-76, SOD-323

Stock272,994
1SS387,L3F
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA ESC

Package: SC-79, SOD-523

Stock626,046
TRS4E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 4A TO-220-2L

Package: -

Stock1,155
1SS372-TE85L-F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA USM

Package: -

Stock30,075
CMF03-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 900V 500MA M-FLAT

Package: -

Stock8,283
JDH2S02SL-L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 10MA SL2

Package: -

Stock12,780
CMG05-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

Package: -

Request a Quote
CMH07-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 2A M-FLAT

Package: -

Stock3,903
CUHS20S60-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 2A US2H

Package: -

Stock23,373
CRS20I30B-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A S-FLAT

Package: -

Stock9,000
CMS10I40A-TE12L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A M-FLAT

Package: -

Stock9,000
TRS4E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 4A TO220-2L

Package: -

Request a Quote
CUHS15S60-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1.5A US2H

Package: -

Stock8,694

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CMS05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 5A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 30V Capacitance @ Vr, F: 330pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: SOD-128	Stock66,468	30V	5A	450mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 30V	330pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS04(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 5A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 370mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 30V Capacitance @ Vr, F: 330pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	Package: SOD-128	Stock373,026	30V	5A	370mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 30V	330pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS01(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	Package: SOD-128	Stock3,360	30V	3A	370mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS11(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 95pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: SOD-128	Stock180,000	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	95pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS06(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 370mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: 130pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	Package: SOD-128	Stock11,208	30V	2A	370mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	130pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CRH01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 1A SFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: SOD-123F	Stock36,000	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS04(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 510mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 47pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: SOD-123F	Stock552,312	40V	1A	510mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	47pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CUS10S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 230mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 135pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	Package: SC-76, SOD-323	Stock272,994	30V	1A	230mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	135pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS387,L3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA ESC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	Package: SC-79, SOD-523	Stock626,046	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
TRS4E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 4A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 55 µA @ 650 V Capacitance @ Vr, F: 263pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	Package: -	Stock1,155	650 V	4A	1.35 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	263pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C
1SS372-TE85L-F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA USM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 10 V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Operating Temperature - Junction: 125°C (Max)	Package: -	Stock30,075	10 V	100mA	500 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	20 µA @ 10 V	20pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	USM	125°C (Max)
CMF03-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 900V 500MA M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 50 µA @ 900 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Stock8,283	900 V	500mA	2.5 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 900 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
JDH2S02SL-L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 10MA SL2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10 V Current - Average Rectified (Io): 10mA Voltage - Forward (Vf) (Max) @ If: - Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 500 mV Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SL2 Operating Temperature - Junction: 125°C (Max)	Package: -	Stock12,780	10 V	10mA	-	Small Signal =< 200mA (Io), Any Speed	-	25 µA @ 500 mV	0.25pF @ 200mV, 1MHz	Surface Mount	2-SMD, No Lead	SL2	125°C (Max)
CMG05-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMH07-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 2A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock3,903	200 V	2A	980 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	10 µA @ 200 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CUHS20S60-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 2A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 650 µA @ 60 V Capacitance @ Vr, F: 290pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C	Package: -	Stock23,373	60 V	2A	530 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	650 µA @ 60 V	290pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C
CRS20I30B-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock9,000	30 V	2A	450 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	82pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CMS10I40A-TE12L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A M-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock9,000	40 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	62pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	150°C (Max)
TRS4E65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 4A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 16pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	Package: -	Request a Quote	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	16pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
CUHS15S60-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 1.5A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 450 µA @ 60 V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C	Package: -	Stock8,694	60 V	1.5A	670 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	450 µA @ 60 V	130pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C
CUHS20S30-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max)	Package: -	Stock117,438	30 V	2A	410 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	390pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CMG07-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -	Package: -	Request a Quote	400 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	-	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-
CRG05-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 1A S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock2,904	800 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS15I40A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 40 V Capacitance @ Vr, F: 35pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	Package: -	Request a Quote	40 V	1.5A	550 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 40 V	35pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CUHS15S30-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C	Package: -	Stock124,530	30 V	1.5A	430 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	200pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C
BAS516-L3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 250MA ESC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 200 nA @ 80 V Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max)	Package: -	Stock208,320	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	200 nA @ 80 V	0.35pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	150°C (Max)
BAS516-H3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 250MA ESC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 200 nA @ 80 V Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max)	Package: -	Stock10,080	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	200 nA @ 80 V	0.35pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	150°C (Max)
CMS21-TE12L-Q-M	Toshiba Semiconductor and Storage	X35 PB-F DIODE M-FLAT MOQ=3000 V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock9,000	-	-	-	-	-	-	-	-	-	-	-