Page 9 - Toshiba Semiconductor and Storage Products - Diodes - Rectifiers - Single

CLS01(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 10A L-FLAT

Package: L-FLAT?

Stock4,448
CLS01(TE16L,PAS,Q)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 10A L-FLAT

Package: L-FLAT?

Stock2,912
CLS01(T6LSONY,Q)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 10A L-FLAT

Package: L-FLAT?

Stock3,360
CLH07(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 5A L-FLAT

Package: L-FLAT?

Stock4,288
CLH07(TE16L,NMB,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 5A L-FLAT

Package: L-FLAT?

Stock4,432
CLH06(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 5A L-FLAT

Package: L-FLAT?

Stock6,144
CLH06(TE16L,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 5A L-FLAT

Package: L-FLAT?

Stock7,536
CLH05,LMBJQ(O
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

Package: L-FLAT?

Stock2,832
CLH05(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

Package: L-FLAT?

Stock7,312
CLH05(T6L,NKOD,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

Package: L-FLAT?

Stock2,384
CLH03(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 3A L-FLAT

Package: L-FLAT?

Stock3,392
CLH03(TE16L,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 3A L-FLAT

Package: L-FLAT?

Stock5,056
CLH02(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 3A L-FLAT

Package: L-FLAT?

Stock3,696
CLH02(TE16L,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 3A L-FLAT

Package: L-FLAT?

Stock6,096
CLH01(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 3A L-FLAT

Package: L-FLAT?

Stock6,736
CLH01(TE16L,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 3A L-FLAT

Package: L-FLAT?

Stock3,248
1SS193S,LF(D
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SMINI

Package: TO-236-3, SC-59, SOT-23-3

Stock5,104
1SS389,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA ESC

Package: SC-79, SOD-523

Stock4,352
DSF05S30U(TPH3,F)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

Package: SC-76, SOD-323

Stock5,184
DSF07S30U(TPH3,F)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 700MA USC

Package: SC-76, SOD-323

Stock6,768

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLS01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	Package: L-FLAT?	Stock4,448	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS01(TE16L,PAS,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	Package: L-FLAT?	Stock2,912	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS01(T6LSONY,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	Package: L-FLAT?	Stock3,360	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLH07(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock4,288	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH07(TE16L,NMB,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock4,432	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH06(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -	Package: L-FLAT?	Stock6,144	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-
CLH06(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -	Package: L-FLAT?	Stock7,536	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-
CLH05,LMBJQ(O	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock2,832	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH05(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock7,312	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH05(T6L,NKOD,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock2,384	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH03(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -	Package: L-FLAT?	Stock3,392	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-
CLH03(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -	Package: L-FLAT?	Stock5,056	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-
CLH02(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock3,696	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH02(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock6,096	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock6,736	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
CLH01(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock3,248	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
1SS193S,LF(D	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SMINI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock5,104	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
1SS389,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 25pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	Package: SC-79, SOD-523	Stock4,352	40V	100mA	600mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 10V	25pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
DSF05S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	Package: SC-76, SOD-323	Stock5,184	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
DSF07S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 700MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	Package: SC-76, SOD-323	Stock6,768	30V	700mA	450mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
U1GWJ49(TE12L,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A PWMINI Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI Operating Temperature - Junction: -40°C ~ 125°C	Package: TO-243AA	Stock3,360	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	TO-243AA	PW-MINI	-40°C ~ 125°C
CUS02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: SC-76, SOD-323	Stock5,536	30V	1A	470mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
CUS01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 125°C	Package: SC-76, SOD-323	Stock2,464	30V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 125°C
TRS8E65C,S1Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 8A TO220-2L Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90µA @ 650V Capacitance @ Vr, F: 44pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2	Stock6,576	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	90µA @ 650V	44pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
TRS6E65C,S1AQ	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 6A TO220-2L Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90µA @ 650V Capacitance @ Vr, F: 35pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2	Stock6,336	650V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	90µA @ 650V	35pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
CMS16(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: SOD-128	Stock21,744	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS14(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: SOD-128	Stock6,896	60V	2A	580mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS07(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	Package: SOD-128	Stock3,360	30V	2A	450mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C