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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 360mV @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: 90pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: SOD-123F |
Stock7,216 |
|
30V | 1.5A | 360mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 90pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 30V
- Capacitance @ Vr, F: 9.3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: SC2
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock6,016 |
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30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.3pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | SC2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 100MA SC70
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-70, SOT-323 |
Stock4,080 |
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400V | 100mA | 1.3V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 500ns | 1µA @ 400V | 5pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: 200pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2C
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock6,880 |
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20V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2C | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 800V 500MA MFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 2.5V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 50µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: SOD-128 |
Stock309,900 |
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800V | 500mA | 2.5V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 800V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 1KV 500MA MFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 50µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: SOD-128 |
Stock3,152 |
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1000V | 500mA | 2.7V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 800V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 30V 100MA SMINI
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 30V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
- Operating Temperature - Junction: 125°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock85,548 |
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30V | 100mA | 1.3V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 30V | 6pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: 200pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2C
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock4,384 |
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20V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2C | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 30V
- Capacitance @ Vr, F: 17pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-79, SOD-523 |
Stock5,072 |
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30V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 30V | 17pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SL2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 30V
- Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: SL2
- Operating Temperature - Junction: 125°C (Max)
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Package: 0201 (0603 Metric) |
Stock6,432 |
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30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.02pF @ 2V, 1MHz | Surface Mount | 0201 (0603 Metric) | SL2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 500MA CST2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 10V
- Capacitance @ Vr, F: 42pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: CST2
- Operating Temperature - Junction: 125°C (Max)
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Package: SOD-882 |
Stock5,328 |
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40V | 500mA | 350mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 10V | 42pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA CST2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 10V
- Capacitance @ Vr, F: 55pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: CST2
- Operating Temperature - Junction: 125°C (Max)
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Package: SOD-882 |
Stock5,504 |
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30V | 500mA | 340mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 10V | 55pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA FSC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 15pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, Flat Lead |
Stock3,536 |
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40V | 100mA | 620mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 15pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | fSC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 200MA SSM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 20V
- Capacitance @ Vr, F: 20pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-75, SOT-416 |
Stock2,528 |
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20V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 20V | 20pF @ 0V, 1MHz | Surface Mount | SC-75, SOT-416 | SSM | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 10V 100MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 10V
- Capacitance @ Vr, F: 40pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-79, SOD-523 |
Stock5,376 |
|
10V | 100mA | 500mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 10V | 40pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 280mV @ 10mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 30V
- Capacitance @ Vr, F: 17pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-76, SOD-323 |
Stock2,432 |
|
30V | 200mA | 280mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 17pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 25pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-79, SOD-523 |
Stock7,808 |
|
40V | 100mA | 600mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 25pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 30V
- Capacitance @ Vr, F: 26pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 125°C (Max)
|
Package: SC-79, SOD-523 |
Stock6,176 |
|
30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 26pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: 200pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2C
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock74,652 |
|
20V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2C | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 10V 100MA SC59
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 10V
- Capacitance @ Vr, F: 40pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- Operating Temperature - Junction: 125°C (Max)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock28,422 |
|
10V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 20µA @ 10V | 40pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700µA @ 30V
- Capacitance @ Vr, F: 8.2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: SC2
- Operating Temperature - Junction: 125°C (Max)
|
Package: 2-SMD, No Lead |
Stock283,716 |
|
30V | 100mA | 620mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 700µA @ 30V | 8.2pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | SC2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA USC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 30V
- Capacitance @ Vr, F: 26pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
|
Package: SC-76, SOD-323 |
Stock28,746 |
|
30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 26pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC59-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
- Operating Temperature - Junction: 125°C (Max)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock26,604 |
|
80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 125°C (Max) |
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|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 300MA SC70
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 300mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 20V
- Capacitance @ Vr, F: 46pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Operating Temperature - Junction: 125°C (Max)
|
Package: SC-70, SOT-323 |
Stock89,520 |
|
20V | 300mA | 450mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 20V | 46pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70 | 125°C (Max) |
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|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA FSC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 30V
- Capacitance @ Vr, F: 15pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
- Operating Temperature - Junction: 125°C (Max)
|
Package: 2-SMD, Flat Lead |
Stock275,508 |
|
30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 15pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | fSC | 125°C (Max) |
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|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA FSC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 15pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
- Operating Temperature - Junction: 125°C (Max)
|
Package: 2-SMD, Flat Lead |
Stock185,562 |
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40V | 100mA | 620mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 15pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | fSC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A CST2C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 640mV @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 40V
- Capacitance @ Vr, F: 130pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2C
- Operating Temperature - Junction: 150°C (Max)
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Package: 2-SMD, No Lead |
Stock96,660 |
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40V | 1.5A | 640mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 40V | 130pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2C | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA USC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 30V
- Capacitance @ Vr, F: 120pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: -
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Package: SC-76, SOD-323 |
Stock100,086 |
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30V | 500mA | 450mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 120pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | - |