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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 4A 2-1Y1A
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-UDFN (2x2)
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Package: 6-WDFN Exposed Pad |
Stock46,176 |
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Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 4A UDFN6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-µDFN(2x2)
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Package: 6-WDFN Exposed Pad |
Stock13,344 |
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Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-µDFN(2x2) |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.18A/0.1A ES6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
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Package: SOT-563, SOT-666 |
Stock77,388 |
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Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.5A/0.33A ES6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
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Package: SOT-563, SOT-666 |
Stock35,052 |
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Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.18A ES6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
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Package: SOT-563, SOT-666 |
Stock103,914 |
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Logic Level Gate | 20V | 180mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 4A UDFN6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-UDFN (2x2)
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Package: 6-WDFN Exposed Pad |
Stock180,000 |
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Logic Level Gate, 1.8V Drive | 30V | 4A | 84 mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.8A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock34,896 |
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Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.5A US6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 200mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock27,318 |
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Logic Level Gate, 1.5V Drive | 20V | 500mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 200mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A ES6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
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Package: SOT-563, SOT-666 |
Stock95,874 |
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Logic Level Gate | 30V | 100mA | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.25A ES6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
- Power - Max: 250mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock251,127 |
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Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 250mW | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.8A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock3,504 |
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Logic Level Gate, 1.2V Drive | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
- Power - Max: 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock43,383 |
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- | 30V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 30V 0.1A USV
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
- Power - Max: 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Package: - |
Stock8,376 |
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- | 30V | 100mA (Ta) | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | USV |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 12V 8A 6TCSPA
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-TCSPA (2.14x1.67)
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Package: - |
Stock27,780 |
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- | 12V | 8A | 5.1mOhm @ 8A, 4.5V | - | - | - | - | - | Surface Mount | 6-SMD, No Lead | 6-TCSPA (2.14x1.67) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 50V 0.1A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
- Power - Max: 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock8,982 |
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- | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 7pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 30V 0.1A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
- Power - Max: 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock97,317 |
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- | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.3A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Power - Max: 285mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock16,605 |
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- | 60V | 300mA (Ta) | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 285mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.25A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
- Power - Max: 285mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock14,265 |
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- | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 285mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.5A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
- Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock11,970 |
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Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta), 330mA (Ta) | 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.23nC @ 4V, 1.2nC @ 4V | 46pF @ 10V, 43pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 0.25A ES6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
- Power - Max: 150mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock23,136 |
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Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 30V/20V 0.5A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
- Vgs(th) (Max) @ Id: 1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
- Power - Max: 500mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock5,562 |
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- | 30V, 20V | 500mA (Ta) | 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V | 1.1V @ 100µA | - | 245pF @ 10V, 218pF @ 10V | 500mW | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 1.6A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
- Power - Max: 500mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Request a Quote |
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- | 20V | 1.6A (Ta) | 119mOhm @ 1A, 4V | 1V @ 1mA | 7.5nC @ 4V | 260pF @ 10V | 500mW | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.8A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock26,832 |
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Logic Level Gate, 1.2V Drive | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 4A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
- Power - Max: 1W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-µDFN (2x2)
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Package: - |
Stock49,242 |
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Logic Level Gate, 1.8V Drive | 20V | 4A (Ta) | 45mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | 1W (Ta) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-µDFN (2x2) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.5A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock34,851 |
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Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta) | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 100V 2A 6TSOPF
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 1.8W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-TSOP-F
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Package: - |
Request a Quote |
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Logic Level Gate, 4V Drive | 100V | 2A (Ta) | 103mOhm @ 2A, 10V | 2.5V @ 100µA | 3.1nC @ 4.5V | 290pF @ 15V | 1.8W (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | 6-TSOP-F |
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Toshiba Semiconductor and Storage |
30V N-CH COMMON DRAIN FET RSS:9.
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 880mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 10-XFLGA, CSP
- Supplier Device Package: TCSPAG-341501
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Package: - |
Stock28,470 |
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- | 30V | 9A (Ta) | - | 2.3V @ 250µA | 17.3nC @ 10V | - | 880mW (Ta) | 150°C | Surface Mount | 10-XFLGA, CSP | TCSPAG-341501 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 1.5A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock26,805 |
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Logic Level Gate, 1.8V Drive | 20V | 1.5A (Ta) | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |