Toshiba Semiconductor and Storage Products - Transistors - FETs, MOSFETs - Arrays

SSM6P36TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A UF6

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Stock11,769
SSM6N7002BFU-T5L-F
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

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SSM6N55NU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

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Stock1,455
SSM6N813R-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

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Stock24,597
SSM6P54TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.2A UF6

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Stock13,695
TPC8228-H-LQ
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 3.8A 8SOP

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SSM6P35AFU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

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Stock17,970
SSM6L807R-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A 6TSOPF

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Stock18,000
SSM6N16FE-L3F
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

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Stock23,130
SSM6N37FE-LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

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Stock10,455
SSM6N68NU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

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Stock3,981
SSM6P47NU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

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Stock8,649
SSM6N40TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 1.6A UF6

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Stock22,368
SSM14N956L-EFF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

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Stock29,565
SSM5N16FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

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Stock9,000
SSM6N48FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

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Stock8,250
SSM6P40TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 1.4A UF6

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Stock26,037
SSM6L820R-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

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Stock17,625
SSM6L820R-LXHF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

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Stock44,349
TPC8227-H-LQ
Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 5.1A 8SOP

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Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SSM6P36TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.33A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Stock11,769	Logic Level Gate, 1.5V Drive	20V	330mA (Ta)	1.31Ohm @ 100mA, 4.5V	1V @ 1mA	1.2nC @ 4V	43pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM6N7002BFU-T5L-F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Request a Quote	Logic Level Gate	60V	200mA	2.1Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6N55NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	Package: -	Stock1,455	Logic Level Gate	30V	4A	46mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
SSM6N813R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock24,597	-	100V	3.5A (Ta)	112mOhm @ 3.5A, 10V	2.5V @ 100µA	3.6nC @ 4.5V	242pF @ 15V	1.5W (Ta)	175°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6P54TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 1.2A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 228mOhm @ 600mA, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Stock13,695	Logic Level Gate, 1.5V Drive	20V	1.2A (Ta)	228mOhm @ 600mA, 2.5V	1V @ 1mA	7.7nC @ 4V	331pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
TPC8228-H-LQ	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 3.8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	60V	3.8A	57mOhm @ 1.9A, 10V	2.3V @ 100µA	11nC @ 10V	640pF @ 10V	1.5W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6P35AFU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.25A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 285mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Stock17,970	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.4Ohm @ 150mA, 4.5V	1V @ 100µA	-	42pF @ 10V	285mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6L807R-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock18,000	-	30V	4A (Ta)	39.1mOhm @ 2A, 4.5V	1V @ 1mA	3.2nC @ 4.5V, 6.74nC @ 4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6N16FE-L3F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: -	Stock23,130	-	20V	100mA (Ta)	3Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
SSM6N37FE-LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.25A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: -	Stock10,455	Logic Level Gate	20V	250mA	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
SSM6N68NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	Package: -	Stock3,981	Logic Level Gate, 1.8V Drive	30V	4A (Ta)	84mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V	2W (Ta)	150°C	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
SSM6P47NU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	Package: -	Stock8,649	Logic Level Gate	20V	4A	95mOhm @ 1.5A, 4.5V	1V @ 1mA	4.6nC @ 4.5V	290pF @ 10V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
SSM6N40TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 1.6A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Stock22,368	Logic Level Gate, 4V Drive	30V	1.6A (Ta)	122mOhm @ 1A, 10V	2.6V @ 1mA	5.1nC @ 10V	180pF @ 15V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM14N956L-EFF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 12V 20A TCSPED FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.57mA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.33W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 14-SMD, No Lead Supplier Device Package: TCSPED-302701	Package: -	Stock29,565	-	12V	20A (Ta)	1.35mOhm @ 10A, 4.5V	1.4V @ 1.57mA	76nC @ 4V	-	1.33W (Ta)	150°C	Surface Mount	14-SMD, No Lead	TCSPED-302701
SSM5N16FU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A USV FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	Package: -	Stock9,000	-	20V	100mA (Ta)	3Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	200mW (Ta)	150°C	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
SSM6N48FU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Stock8,250	-	30V	100mA (Ta)	3.2Ohm @ 10mA, 4V	1.5V @ 100µA	-	15.1pF @ 3V	300mW	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6P40TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 1.4A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Stock26,037	Logic Level Gate, 4V Drive	30V	1.4A (Ta)	226mOhm @ 1A, 10V	2V @ 1mA	2.9nC @ 10V	120pF @ 15V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM6L820R-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock17,625	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @ 4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6L820R-LXHF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock44,349	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
TPC8227-H-LQ	Toshiba Semiconductor and Storage	MOSFET 2N-CH 40V 5.1A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	40V	5.1A	33mOhm @ 2.6A, 10V	2.3V @ 100µA	10nC @ 10V	640pF @ 10V	1.5W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6N24TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Stock7,695	-	30V	500mA (Ta)	145mOhm @ 500mA, 4.5V	1.1V @ 100µA	-	245pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM6N357R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.65A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock20,688	-	60V	650mA (Ta)	1.8Ohm @ 150mA, 5V	2V @ 1mA	1.5nC @ 5V	60pF @ 12V	1.5W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
TPCP8407-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 40V 5A/4A PS-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Power - Max: 690mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	Package: -	Stock9,984	-	40V	5A (Ta), 4A (Ta)	36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V	3V @ 1mA	11.8nC @ 10V, 18nC @ 10V	505pF @ 10V, 810pF @ 10V	690mW (Ta)	150°C	Surface Mount	8-SMD, Flat Lead	PS-8
SSM6P816R-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 6A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock12,447	Logic Level Gate, 1.8V Drive	20V	6A (Ta)	30.1mOhm @ 4A, 4.5V	1V @ 1mA	16.6nC @ 4.5V	1030pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6N813R-LXHF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock15,822	Logic Level Gate, 4.5V Drive	100V	3.5A (Ta)	112mOhm @ 3.5A, 10V	2.5V @ 100µA	3.6nC @ 4.5V	242pF @ 15V	1.5W (Ta)	175°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6L14FE-TE85L-F	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.8A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: -	Stock52,236	Logic Level Gate, 1.5V Drive	20V	800mA (Ta), 720mA (Ta)	240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V	1V @ 1mA	2nC @ 4.5V, 1.76nC @ 4.5V	90pF @ 10V, 110pF @ 10V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
TPC8207-TE12L	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 6A 8-SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V Power - Max: 750mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	Package: -	Request a Quote	Logic Level Gate	20V	6A	20mOhm @ 4.8A, 4V	1.2V @ 200µA	22nC @ 5V	2010pF @ 10V	750mW	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
SSM6N67NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	Package: -	Stock31,257	Logic Level Gate, 1.8V Drive	30V	4A (Ta)	39.1mOhm @ 2A, 4.5V	1V @ 1mA	3.2nC @ 4.5V	310pF @ 15V	2W (Ta)	150°C	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)