Page 3 - Toshiba Semiconductor and Storage Products - Transistors - FETs, MOSFETs - Arrays

TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A/3.2A VS-8

Package: 8-SMD, Flat Lead

Stock4,704
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

Package: 8-SMD, Flat Lead

Stock6,416
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

Package: 8-SOIC (0.173", 4.40mm Width)

Stock2,704
TPC8408,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,904
TPC8407,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 9A/7.4A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,168
TPC8223-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 9A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,968
SSM6L39TU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

Package: 6-SMD, Flat Leads

Stock2,256
SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

Package: 6-WDFN Exposed Pad

Stock7,536
SSM6N7002BFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,248
SSM6P36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

Package: SOT-563, SOT-666

Stock2,400
SSM6N36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

Package: SOT-563, SOT-666

Stock4,064
SSM6P35FE,LM
Toshiba Semiconductor and Storage

MOSFET 2NCH 20V 100MA ES6

Package: SOT-563, SOT-666

Stock5,536
SSM6N37FE,LM(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A 2-2N1D

Package: SOT-563, SOT-666

Stock3,264
SSM6L09FUTE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,728
SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A US6

Package: 6-TSSOP, SC-88, SOT-363

Stock7,968
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A US6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,088
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A

Package: 6-TSSOP, SC-88, SOT-363

Stock3,024
SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.72A ES6

Package: SOT-563, SOT-666

Stock7,456
SSM6N15AFE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

Package: SOT-563, SOT-666

Stock3,696
SSM6L16FETE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

Package: SOT-563, SOT-666

Stock3,408

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TPCF8402(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 4A/3.2A VS-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	Package: 8-SMD, Flat Lead	Stock4,704	Logic Level Gate	30V	4A, 3.2A	50 mOhm @ 2A, 10V	2V @ 1mA	10nC @ 10V	470pF @ 10V	330mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	VS-8 (2.9x1.5)
TPCF8201(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 3A VS-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	Package: 8-SMD, Flat Lead	Stock6,416	Logic Level Gate	20V	3A	49 mOhm @ 1.5A, 4.5V	1.2V @ 200µA	7.5nC @ 5V	590pF @ 10V	330mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	VS-8 (2.9x1.5)
TPC8207(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 6A 8-SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	Package: 8-SOIC (0.173", 4.40mm Width)	Stock2,704	Logic Level Gate	20V	6A	20 mOhm @ 4.8A, 4V	1.2V @ 200µA	22nC @ 5V	2010pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
TPC8408,LQ(S	Toshiba Semiconductor and Storage	MOSFET N/P-CH 40V 6.1A/5.3A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,904	Logic Level Gate	40V	6.1A, 5.3A	32 mOhm @ 3.1A, 10V	2.3V @ 100µA	24nC @ 10V	850pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TPC8407,LQ(S	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 9A/7.4A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,168	Logic Level Gate	30V	9A, 7.4A	17 mOhm @ 4.5A, 10V	2.3V @ 100µA	17nC @ 10V	1190pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TPC8223-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 9A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,968	Logic Level Gate	30V	9A	17 mOhm @ 4.5A, 10V	2.3V @ 100µA	17nC @ 10V	1190pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6L39TU,LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.8A UF6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Rds On (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: 6-SMD, Flat Leads	Stock2,256	Logic Level Gate, 1.8V Drive	20V	800mA	143 mOhm @ 600MA, 4V	1V @ 1mA	-	268pF @ 10V	500mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	UF6
SSM6N55NU,LF(T	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A UDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN(2x2)	Package: 6-WDFN Exposed Pad	Stock7,536	Logic Level Gate	30V	4A	46 mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN(2x2)
SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A US6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,248	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6P36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.33A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Package: SOT-563, SOT-666	Stock2,400	Logic Level Gate	20V	330mA	1.31 Ohm @ 100mA, 4.5V	1V @ 1mA	1.2nC @ 4V	43pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6N36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.5A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Package: SOT-563, SOT-666	Stock4,064	Logic Level Gate	20V	500mA	630 mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6P35FE,LM	Toshiba Semiconductor and Storage	MOSFET 2NCH 20V 100MA ES6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock5,536	Standard	20V	100mA	8 Ohm @ 50mA, 4V	1V @ 1mA	-	12.2pF @ 3V	150mW	150°C	Surface Mount	SOT-563, SOT-666	ES6
SSM6N37FE,LM(T	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.25A 2-2N1D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock3,264	Logic Level Gate	20V	250mA	2.2 Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 0.4A/0.2A US6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,728	Logic Level Gate	30V	400mA, 200mA	700 mOhm @ 200MA, 10V	1.8V @ 100µA	-	20pF @ 5V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A US6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock7,968	Logic Level Gate, 1.2V Drive	20V	180mA, 100mA	3 Ohm @ 50mA, 4V	1V @ 1mA	-	9.5pF @ 3V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6N16FUTE85LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A US6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,088	Standard	20V	100mA	3 Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	200mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6N7002KFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.3A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 285mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,024	Standard	60V	300mA	1.5 Ohm @ 100mA, 10V	2.1V @ 250µA	0.6nC @ 4.5V	40pF @ 10V	285mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6P41FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.72A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 720mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Package: SOT-563, SOT-666	Stock7,456	Logic Level Gate	20V	720mA	300 mOhm @ 400mA, 4.5V	1V @ 1mA	1.76nC @ 4.5V	110pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6N15AFE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Package: SOT-563, SOT-666	Stock3,696	Logic Level Gate	30V	100mA	4 Ohm @ 10mA, 4V	1.5V @ 100µA	-	7.8pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6L16FETE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A ES6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Package: SOT-563, SOT-666	Stock3,408	Standard	20V	100mA	3 Ohm @ 10mA, 4V	1.1V @ 0.1mA	-	9.3pF @ 3V	150mW	150°C (TA)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6N15AFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A 2-2J1C FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,280	Logic Level Gate	30V	100mA	3.6 Ohm @ 10mA, 4V	1.5V @ 100µA	-	13.5pF @ 3V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6N7002BFE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock14,760,000	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.1A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Package: SOT-563, SOT-666	Stock32,976	Logic Level Gate	20V	100mA	8 Ohm @ 50mA, 4V	1V @ 1mA	-	12.2pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6N61NU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 4A UDFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFNB (2x2)	Package: 6-WDFN Exposed Pad	Stock22,290	Logic Level Gate, 1.5V Drive	20V	4A	33 mOhm @ 4A, 4.5V	1V @ 1mA	3.6nC @ 4.5V	410pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFNB (2x2)
SSM6L61NU,LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 4A UDFN6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	Package: 6-WDFN Exposed Pad	Stock23,022	Standard	20V	4A	-	-	-	-	-	-	Surface Mount	6-WDFN Exposed Pad	6-UDFN (2x2)
SSM6N37FU,LF	Toshiba Semiconductor and Storage	MOSFET ARRAY 2N-CH 20V 250MA US6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 300mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock25,446	Logic Level Gate, 1.5V Drive	20V	250mA (Ta)	2.2 Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	300mW	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6N7002CFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.17A US6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power - Max: 285mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock58,848	Standard	60V	170mA	3.9 Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 4.5V	17pF @ 10V	285mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6P47NU,LF(T	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 2-2Y1A FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	Package: 6-WDFN Exposed Pad	Stock26,646	Logic Level Gate	20V	4A	95 mOhm @ 1.5A, 4.5V	1V @ 1mA	4.6nC @ 4.5V	290pF @ 10V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFN (2x2)