|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 48A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock14,982 |
|
MOSFET (Metal Oxide) | 30 V | 48A (Tc) | 4.5V, 10V | 2.1V @ 200µA | 22 nC @ 10 V | 1975 pF @ 15 V | ±20V | - | 830mW (Ta), 69W (Tc) | 4.8mOhm @ 24A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 100A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock26,406 |
|
MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 2.1V @ 1mA | 230 nC @ 10 V | 9500 pF @ 10 V | +10V, -20V | - | 960mW (Ta), 170W (Tc) | 3.1mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
Toshiba Semiconductor and Storage |
SMOS LOW RON NCH IO: 0.4A VDSS:
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: USM
- Package / Case: SC-70, SOT-323
|
Package: - |
Stock23,565 |
|
MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 40 pF @ 10 V | ±20V | - | 150mW (Ta) | 1.5Ohm @ 100mA, 10V | 150°C | Surface Mount | USM | SC-70, SOT-323 |
|
|
Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -60V -2A SOT23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Package: - |
Stock16,254 |
|
MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 2V @ 1mA | 8.3 nC @ 10 V | 330 pF @ 10 V | +10V, -20V | - | 1W (Ta) | 300mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 2V @ 500µA | 115 nC @ 10 V | 4800 pF @ 10 V | +20V, -25V | - | 1.6W (Ta), 45W (Tc) | 4.8mOhm @ 17A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6Ohm @ 1.3A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock129 |
|
MOSFET (Metal Oxide) | 900 V | 2.5A (Ta) | 10V | 4V @ 250µA | 15 nC @ 10 V | 650 pF @ 25 V | ±30V | - | 35W (Tc) | 4.6Ohm @ 1.3A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock2,610 |
|
MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 4V @ 1mA | 30 nC @ 10 V | 1130 pF @ 300 V | ±30V | - | 40W (Tc) | 750mOhm @ 5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
AECQ MOSFET NCH 100V 3.5A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
|
Package: - |
Stock22,416 |
|
MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
|
Toshiba Semiconductor and Storage |
100V U-MOS X-H SOP-ADVANCE(N) 3.
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock15,069 |
|
MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 3.5V @ 500µA | 83 nC @ 10 V | 7400 pF @ 50 V | ±20V | - | 210W (Tc) | 3.1mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 24A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.02mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock126 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 45W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 180MA VESM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 1V @ 1mA | - | 9.5 pF @ 3 V | ±10V | - | 150mW (Ta) | 3Ohm @ 50mA, 4V | 150°C | Surface Mount | VESM | SOT-723 |
|
|
Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247 30MO
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 249W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: - |
Stock90 |
|
SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 5V @ 13mA | 82 nC @ 18 V | 2925 pF @ 800 V | +25V, -10V | - | 249W (Tc) | 40mOhm @ 30A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 26A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta), 61W (Tc)
- Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock30,066 |
|
MOSFET (Metal Oxide) | 60 V | 26A (Tc) | 4.5V, 10V | 2.5V @ 200µA | 17 nC @ 10 V | 1625 pF @ 30 V | ±20V | - | 610mW (Ta), 61W (Tc) | 11.4mOhm @ 13A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.1A UFM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
|
Package: - |
Stock2,244 |
|
MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4V, 10V | 1.8V @ 100µA | - | 86 pF @ 15 V | ±20V | - | 800mW (Ta) | 390mOhm @ 500mA, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
|
Toshiba Semiconductor and Storage |
40V U-MOS IX-H L-TOGL 1.0MOHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: L-TOGL™
- Package / Case: 8-PowerBSFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 3V @ 500µA | 84 nC @ 10 V | 6890 pF @ 10 V | ±20V | - | 230W (Tc) | 1mOhm @ 100A, 10V | 175°C | Surface Mount | L-TOGL™ | 8-PowerBSFN |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=60
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP-F
- Package / Case: 6-SMD, Flat Leads
|
Package: - |
Stock15,354 |
|
MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.5W (Ta) | 36mOhm @ 5A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88.2W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock2,010 |
|
MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 2.5V @ 200µA | 26 nC @ 10 V | 1650 pF @ 10 V | ±20V | - | 88.2W (Tc) | 10.5mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -60V -3.5A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Package: - |
Stock20,169 |
|
MOSFET (Metal Oxide) | 60 V | 3.5A (Ta) | 4V, 10V | 2V @ 1mA | 15.1 nC @ 10 V | 660 pF @ 10 V | +10V, -20V | - | 1W (Ta) | 134mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 112mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-µDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
|
Package: - |
Stock11,775 |
|
MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | ±8V | Schottky Diode (Isolated) | 1W (Ta) | 112mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-µDFN (2x2) | 6-WDFN Exposed Pad |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 4V @ 350µA | 13 nC @ 10 V | 450 pF @ 300 V | ±30V | - | 30W (Tc) | 2.2Ohm @ 1.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 650MA SOT23F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 12 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Package: - |
Stock156,039 |
|
MOSFET (Metal Oxide) | 60 V | 650mA (Ta) | 3V, 5V | 2V @ 1mA | 1.5 nC @ 5 V | 60 pF @ 12 V | ±12V | - | 1W (Ta) | 1.8Ohm @ 150mA, 5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UF6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UF6
- Package / Case: 6-SMD, Flat Leads
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | ±8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 20A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock29,727 |
|
MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 6V, 10V | 3V @ 1mA | 37 nC @ 10 V | 1850 pF @ 10 V | +10V, -20V | - | 41W (Tc) | 22.2mOhm @ 10A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
|
Package: - |
Stock63 |
|
MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 4.5V @ 790µA | 43 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 130W (Tc) | 230mOhm @ 7.9A, 10V | 150°C | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DTM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
|
Package: - |
Stock7,500 |
|
MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 4.5V @ 790µA | 43 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 139W (Tc) | 245mOhm @ 7.9A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
|
Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 155MOHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: - |
Stock132 |
|
MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 150W (Tc) | 155mOhm @ 9A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2A UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
|
Package: - |
Stock43,317 |
|
MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 3.3V, 10V | 2V @ 1mA | 6 nC @ 10 V | 150 pF @ 10 V | ±20V | - | 800mW (Ta) | 300mOhm @ 1A, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock504 |
|
MOSFET (Metal Oxide) | 40 V | 90A (Ta) | 4.5V, 10V | 2V @ 1mA | 172 nC @ 10 V | 7700 pF @ 10 V | +10V, -20V | - | 180W (Tc) | 4.3mOhm @ 45A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |