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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=150W F=1MHZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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Package: - |
Stock11,889 |
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MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 150W (Tc) | 155mOhm @ 9A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DOS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 142W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
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Package: - |
Stock4,695 |
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MOSFET (Metal Oxide) | 75 V | 150A (Ta) | 10V | 4V @ 1mA | 72 nC @ 10 V | 6000 pF @ 37.5 V | ±20V | - | 800mW (Ta), 142W (Tc) | 2.5mOhm @ 50A, 10V | 150°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock8,715 |
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MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 10V | 4V @ 100µA | 7.1 nC @ 10 V | 470 pF @ 10 V | ±20V | - | 50W (Tc) | 48mOhm @ 3.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
TJ9A10M3,S4Q
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 19W (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 9A (Ta) | 10V | 4V @ 1mA | 47 nC @ 10 V | 2900 pF @ 10 V | ±20V | - | 19W (Tc) | 170mOhm @ 4.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP-F
- Package / Case: 6-SMD, Flat Leads
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Package: - |
Stock17,835 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1.5W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS P-CH LOW VOLTA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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Package: - |
Stock43,233 |
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MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | 100 pF @ 10 V | +6V, -8V | - | 150mW (Ta) | 390mOhm @ 800mA, 4.5V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A 8DSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 3V @ 500µA | 55 nC @ 10 V | 4560 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.14mOhm @ 60A, 10V | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 82A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta), 90W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock15,465 |
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MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 4.5V, 10V | 2.4V @ 300µA | 47 nC @ 10 V | 3615 pF @ 20 V | ±20V | - | 830mW (Ta), 90W (Tc) | 3.7mOhm @ 41A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 110MOHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.02mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock318 |
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MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 190W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A 6UDFNB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
- Vgs (Max): +20V, -12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Stock17,535 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 2.5 nC @ 4.5 V | 280 pF @ 15 V | +20V, -12V | - | 1.25W (Ta) | 46mOhm @ 4A, 10V | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 800MA VESM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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Package: - |
Stock18,804 |
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MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | 100 pF @ 10 V | +6V, -8V | - | 150mW (Ta) | 390mOhm @ 800mA, 4.5V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,961 |
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MOSFET (Metal Oxide) | 650 V | 5.2A (Ta) | 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | 380 pF @ 300 V | ±30V | - | 60W (Tc) | 1.22Ohm @ 2.6A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
150V U-MOS IX-H SOP-ADVANCE(N) 3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock28,071 |
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MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 67 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 210W (Tc) | 3.7mOhm @ 45A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 12V 4.8A ES6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 12 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 3.5A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: ES6
- Package / Case: SOT-563, SOT-666
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Package: - |
Stock2,400 |
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MOSFET (Metal Oxide) | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | 1040 pF @ 12 V | ±8V | - | 700mW (Ta) | 32mOhm @ 3.5A, 4.5V | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 210W (Tc)
- Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock29,154 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 91 nC @ 10 V | 8100 pF @ 30 V | ±20V | - | 960mW (Ta), 210W (Tc) | 1.34mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 142W (Tc)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
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Package: - |
Stock14,466 |
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MOSFET (Metal Oxide) | 250 V | 26A (Tc) | 10V | 4V @ 1mA | 22 nC @ 10 V | 2200 pF @ 100 V | ±20V | - | 800mW (Ta), 142W (Tc) | 52mOhm @ 13A, 10V | 150°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: - |
Stock13,038 |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 103mOhm @ 1A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25 nC @ 10 V | 890 pF @ 300 V | ±30V | - | 100W (Tc) | 340mOhm @ 5.8A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock58,608 |
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MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 2.5V @ 500µA | 65 nC @ 10 V | 4180 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 3.2mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
N-CH MOSFET 20V, +/-8V, 6A ,0.03
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP-F
- Package / Case: 6-SMD, Flat Leads
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Package: - |
Stock17,880 |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | 410 pF @ 10 V | ±8V | - | 1.5W (Ta) | 33mOhm @ 4A, 4.5V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,905 |
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MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20 nC @ 10 V | 700 pF @ 300 V | ±30V | - | 80W (Tc) | 430mOhm @ 4.9A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock92,856 |
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MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 6V, 10V | 3V @ 500µA | 62 nC @ 10 V | 5855 pF @ 20 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.2mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247 15MO
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 11.7mA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 431W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock81 |
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SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 5V @ 11.7mA | 158 nC @ 18 V | 6000 pF @ 800 V | +25V, -10V | - | 431W (Tc) | 20mOhm @ 50A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.5A UF6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UF6
- Package / Case: 6-SMD, Flat Leads
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Package: - |
Stock7,923 |
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MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 16 nC @ 10 V | 730 pF @ 15 V | ±20V | - | 500mW (Ta) | 73mOhm @ 2A, 10V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Lead
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Package: - |
Stock43,884 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.8W (Ta) | 36mOhm @ 4A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=230W F=1MHZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.27mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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Package: - |
Stock6,354 |
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MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 230W (Tc) | 90mOhm @ 15A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock219 |
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MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4V @ 190µA | 8 nC @ 10 V | 270 pF @ 300 V | ±30V | - | 30W (Tc) | 4.1Ohm @ 1A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA SSM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SSM
- Package / Case: SC-75, SOT-416
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Package: - |
Stock69,102 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 8.5 pF @ 3 V | ±20V | - | 150mW (Ta) | 4Ohm @ 10mA, 4V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |