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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock8,601 |
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MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 3V @ 500µA | 103 nC @ 10 V | 5500 pF @ 10 V | ±20V | - | 180W (Tc) | 1.9mOhm @ 60A, 6V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 500µA | 44 nC @ 10 V | 2800 pF @ 50 V | ±20V | - | 42W (Tc) | 7.4mOhm @ 25A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta), 116W (Tc)
- Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock33,024 |
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MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2.1V @ 500µA | 86 nC @ 10 V | 6410 pF @ 15 V | ±20V | - | 830mW (Ta), 116W (Tc) | 2mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock150 |
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MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | 3000 pF @ 300 V | ±30V | - | 230W (Tc) | 110mOhm @ 13.8A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
UMOS10 TO-220AB 80V 7MOHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock360 |
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MOSFET (Metal Oxide) | 80 V | 64A (Tc) | 6V, 10V | 3.5V @ 500µA | 39 nC @ 10 V | 2700 pF @ 40 V | ±20V | - | 87W (Tc) | 7mOhm @ 32A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 120A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock14,880 |
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MOSFET (Metal Oxide) | 45 V | 120A (Tc) | 4.5V, 10V | 2.4V @ 500µA | 74 nC @ 10 V | 6300 pF @ 22.5 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.4mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A SOT23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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Package: - |
Stock56,208 |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | 630 pF @ 10 V | ±8V | - | 1W (Ta) | 55mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 80A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock14,634 |
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MOSFET (Metal Oxide) | 45 V | 80A (Tc) | 4.5V, 10V | 2.4V @ 300µA | 39 nC @ 10 V | 3200 pF @ 22.5 V | ±20V | - | 2.67W (Ta), 104W (Tc) | 2.8mOhm @ 40A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock414 |
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MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20 nC @ 10 V | 700 pF @ 300 V | ±30V | - | 30W (Tc) | 380mOhm @ 4.9A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -20V -2A SOT346
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: S-Mini
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock37,518 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 600mW (Ta) | 150mOhm @ 1A, 4.5V | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: - |
Stock15,486 |
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MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 29.8mOhm @ 3A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 33A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock11,547 |
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MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 4.5V, 10V | 2.5V @ 500µA | 33 nC @ 10 V | 2250 pF @ 10 V | ±20V | - | 125W (Tc) | 9.7mOhm @ 16.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA VESM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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Package: - |
Stock57,738 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 8.5 pF @ 3 V | ±20V | - | 150mW (Ta) | 4Ohm @ 10mA, 4V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 6
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(X)
- Package / Case: TO-247-4
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Package: - |
Stock354 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 36A (Tc) | 18V | 5V @ 4.2mA | 46 nC @ 18 V | 1530 pF @ 800 V | +25V, -10V | - | 170W (Tc) | 82mOhm @ 18A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 10
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(X)
- Package / Case: TO-247-4
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Package: - |
Stock270 |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 20A (Tc) | 18V | 5V @ 1.2mA | 21 nC @ 18 V | 600 pF @ 400 V | +25V, -10V | - | 76W (Tc) | 152mOhm @ 10A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88.2W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock2,928 |
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MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 2.5V @ 200µA | 26 nC @ 10 V | 1650 pF @ 10 V | ±20V | - | 88.2W (Tc) | 18mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 16A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 16A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 87 nC @ 10 V | 7540 pF @ 10 V | ±20V | - | 1W (Ta) | 6.9mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 6A SOT23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
- Vgs (Max): +12V, -6V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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Package: - |
Stock603,510 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | 560 pF @ 15 V | +12V, -6V | - | 1W (Ta) | 42mOhm @ 5A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock150 |
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MOSFET (Metal Oxide) | 800 V | 5A (Ta) | 10V | 4V @ 500µA | 20 nC @ 10 V | 950 pF @ 25 V | ±30V | - | 40W (Tc) | 2.4Ohm @ 2.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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Package: - |
Stock39,117 |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | 630 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 55mOhm @ 3A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock75 |
|
MOSFET (Metal Oxide) | 200 V | 25A (Ta) | 10V | 3.5V @ 1mA | 60 nC @ 10 V | 2550 pF @ 100 V | ±20V | - | 45W (Tc) | 70mOhm @ 12.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: - |
Stock15,285 |
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MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | 290 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 93mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 90A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock25,680 |
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MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 67 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 960mW (Ta), 170W (Tc) | 3.7mOhm @ 45A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock29,946 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 91 nC @ 10 V | 8100 pF @ 30 V | ±20V | - | 960mW (Ta), 170W (Tc) | 1.34mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247 27MOH
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock36 |
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SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 5V @ 3mA | 65 nC @ 18 V | 2288 pF @ 400 V | +25V, -10V | - | 156W (Tc) | 37mOhm @ 29A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 30A TO247-4L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.27mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(T)
- Package / Case: TO-247-4
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Package: - |
Stock75 |
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MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 230W (Tc) | 90mOhm @ 15A, 10V | 150°C | Through Hole | TO-247-4L(T) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 92A/70A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 92A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock18,663 |
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MOSFET (Metal Oxide) | 100 V | 92A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 75 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 2.5W (Ta), 67W (Tc) | 4.1mOhm @ 35A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock168 |
|
MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 3.5V @ 2.5mA | 160 nC @ 10 V | 6500 pF @ 300 V | ±30V | - | 400W (Tc) | 55mOhm @ 24.6A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |