Page 158 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SUP50N03-5M1P-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A TO-220AB

Package: TO-220-3

Stock121,812
SUM90N06-4M4P-E3
Vishay Siliconix

MOSFET N-CH 60V 90A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock113,220
SUM85N03-06P-E3
Vishay Siliconix

MOSFET N-CH 30V 85A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock70,104
SUM110N08-07P-E3
Vishay Siliconix

MOSFET N-CH 75V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,176
SUD50P04-13L-GE3
Vishay Siliconix

MOSFET P-CH 40V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock510,012
SUD50N10-18P-GE3
Vishay Siliconix

MOSFET N-CH 100V 8.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,888
SUD50N06-07L-GE3
Vishay Siliconix

MOSFET N-CH 60V 96A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,984
SUD50N02-09P-E3
Vishay Siliconix

MOSFET N-CH 20V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock122,160
SUD50N02-04P-E3
Vishay Siliconix

MOSFET N-CH 20V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock455,484
SUD08P06-155L-E3
Vishay Siliconix

MOSFET P-CH 60V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock558,192
SUD06N10-225L-E3
Vishay Siliconix

MOSFET N-CH 100V 6.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock662,784
SIR876DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock3,952
SIR838DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 150V 35A PPAK SO-8

Package: PowerPAK? SO-8

Stock5,872
SIR408DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock11,196
SIE860DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A POLARPAK

Package: 10-PolarPAK? (M)

Stock5,520
SIE854DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock2,064
SIE848DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock7,168
SIE836DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 18.3A POLARPAK

Package: 10-PolarPAK? (SH)

Stock7,456
SIB455EDK-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 9A SC-75-6

Package: PowerPAK? SC-75-6L

Stock4,560
SI8467DB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

Package: 4-XFBGA, CSPBGA

Stock2,272

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SUP50N03-5M1P-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 59.5W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock121,812	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	66nC @ 10V	2780pF @ 15V	±20V	-	2.7W (Ta), 59.5W (Tc)	5.1 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SUM90N06-4M4P-E3	Vishay Siliconix	MOSFET N-CH 60V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock113,220	MOSFET (Metal Oxide)	60V	90A (Tc)	10V	4.5V @ 250µA	160nC @ 10V	6190pF @ 30V	±20V	-	3.75W (Ta), 300W (Tc)	4.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM85N03-06P-E3	Vishay Siliconix	MOSFET N-CH 30V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock70,104	MOSFET (Metal Oxide)	30V	85A (Tc)	4.5V, 10V	3V @ 250µA	65nC @ 10V	3100pF @ 25V	±20V	-	3.75W (Ta), 100W (Tc)	6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110N08-07P-E3	Vishay Siliconix	MOSFET N-CH 75V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,176	MOSFET (Metal Oxide)	75V	110A (Tc)	10V	4.5V @ 250µA	105nC @ 10V	4250pF @ 30V	±20V	-	3.75W (Ta), 208.3W (Tc)	7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUD50P04-13L-GE3	Vishay Siliconix	MOSFET P-CH 40V 60A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 93.7W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,012	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	3V @ 250µA	95nC @ 10V	3120pF @ 25V	±20V	-	3W (Ta), 93.7W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N10-18P-GE3	Vishay Siliconix	MOSFET N-CH 100V 8.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136.4W (Tc) Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,888	MOSFET (Metal Oxide)	100V	8.2A (Ta), 50A (Tc)	10V	5V @ 250µA	75nC @ 10V	2600pF @ 50V	±20V	-	3W (Ta), 136.4W (Tc)	18.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N06-07L-GE3	Vishay Siliconix	MOSFET N-CH 60V 96A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,984	MOSFET (Metal Oxide)	60V	96A (Tc)	4.5V, 10V	3V @ 250µA	144nC @ 10V	5800pF @ 25V	±20V	-	136W (Tc)	7.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N02-09P-E3	Vishay Siliconix	MOSFET N-CH 20V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.5W (Ta), 39.5W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock122,160	MOSFET (Metal Oxide)	20V	-	4.5V, 10V	3V @ 250µA	16nC @ 4.5V	1300pF @ 10V	±20V	-	6.5W (Ta), 39.5W (Tc)	9.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N02-04P-E3	Vishay Siliconix	MOSFET N-CH 20V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock455,484	MOSFET (Metal Oxide)	20V	50A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 4.5V	5000pF @ 10V	±20V	-	8.3W (Ta), 136W (Tc)	4.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD08P06-155L-E3	Vishay Siliconix	MOSFET P-CH 60V 8.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock558,192	MOSFET (Metal Oxide)	60V	8.4A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 10V	450pF @ 25V	±20V	-	2W (Ta), 25W (Tc)	155 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD06N10-225L-E3	Vishay Siliconix	MOSFET N-CH 100V 6.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock662,784	MOSFET (Metal Oxide)	100V	6.5A (Tc)	4.5V, 10V	3V @ 250µA	4nC @ 5V	240pF @ 25V	±20V	-	1.25W (Ta), 20W (Tc)	200 mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR876DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,952	MOSFET (Metal Oxide)	100V	40A (Tc)	4.5V, 10V	2.8V @ 250µA	48nC @ 10V	1640pF @ 50V	±20V	-	5W (Ta), 62.5W (Tc)	10.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR838DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,872	MOSFET (Metal Oxide)	150V	35A (Tc)	10V	4V @ 250µA	50nC @ 10V	2075pF @ 75V	±20V	-	5.4W (Ta), 96W (Tc)	33 mOhm @ 8.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR408DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock11,196	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 10V	1230pF @ 15V	±20V	-	4.8W (Ta), 44.6W (Tc)	6.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIE860DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (M) Package / Case: 10-PolarPAK? (M)	Package: 10-PolarPAK? (M)	Stock5,520	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	105nC @ 10V	4500pF @ 15V	±20V	-	5.2W (Ta), 104W (Tc)	2.1 mOhm @ 21.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (M)	10-PolarPAK? (M)
SIE854DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 14.2 mOhm @ 13.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock2,064	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4.4V @ 250µA	75nC @ 10V	3100pF @ 50V	±20V	-	5.2W (Ta), 125W (Tc)	14.2 mOhm @ 13.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIE848DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock7,168	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	138nC @ 10V	6100pF @ 15V	±20V	-	5.2W (Ta), 125W (Tc)	1.6 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIE836DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 18.3A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (SH) Package / Case: 10-PolarPAK? (SH)	Package: 10-PolarPAK? (SH)	Stock7,456	MOSFET (Metal Oxide)	200V	18.3A (Tc)	10V	4.5V @ 250µA	41nC @ 10V	1200pF @ 100V	±30V	-	5.2W (Ta), 104W (Tc)	130 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (SH)	10-PolarPAK? (SH)
SIB455EDK-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 9A SC-75-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	Package: PowerPAK? SC-75-6L	Stock4,560	MOSFET (Metal Oxide)	12V	9A (Tc)	1.5V, 4.5V	1V @ 250µA	30nC @ 8V	-	±10V	-	2.4W (Ta), 13W (Tc)	27 mOhm @ 5.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Single	PowerPAK? SC-75-6L
SI8467DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock2,272	MOSFET (Metal Oxide)	20V	-	2.5V, 4.5V	1.5V @ 250µA	21nC @ 10V	475pF @ 10V	±12V	-	780mW (Ta), 1.8W (Tc)	73 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
SI8451DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V 10.8A MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot? Package / Case: 6-MICRO FOOT?	Package: 6-MICRO FOOT?	Stock6,372	MOSFET (Metal Oxide)	20V	10.8A (Tc)	1.5V, 4.5V	1V @ 250µA	24nC @ 8V	750pF @ 10V	±8V	-	2.77W (Ta), 13W (Tc)	80 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-Micro Foot?	6-MICRO FOOT?
SI8445DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V 9.8A MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 11.4W (Tc) Rds On (Max) @ Id, Vgs: 84 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock6,496	MOSFET (Metal Oxide)	20V	9.8A (Tc)	1.2V, 4.5V	850mV @ 250µA	16nC @ 5V	700pF @ 10V	±5V	-	1.8W (Ta), 11.4W (Tc)	84 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
SI7774DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,952	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.2V @ 250µA	66nC @ 10V	2630pF @ 15V	±20V	-	5W (Ta), 48W (Tc)	3.8 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7703EDN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4.3A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock113,232	MOSFET (Metal Oxide)	20V	4.3A (Ta)	1.8V, 4.5V	1V @ 800µA	18nC @ 4.5V	-	±12V	Schottky Diode (Isolated)	1.3W (Ta)	48 mOhm @ 6.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7621DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock72,372	MOSFET (Metal Oxide)	20V	4A (Tc)	2.5V, 4.5V	2V @ 250µA	6.2nC @ 5V	300pF @ 10V	±12V	-	3.1W (Ta), 12.5W (Tc)	90 mOhm @ 3.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7454CDP-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 22A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc) Rds On (Max) @ Id, Vgs: 30.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock67,872	MOSFET (Metal Oxide)	100V	22A (Tc)	4.5V, 10V	2.8V @ 250µA	19.5nC @ 10V	580pF @ 50V	±20V	-	4.1W (Ta), 29.7W (Tc)	30.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7403BDN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 8A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock72,012	MOSFET (Metal Oxide)	20V	8A (Tc)	2.5V, 4.5V	1V @ 250µA	15nC @ 8V	430pF @ 10V	±8V	-	3.1W (Ta), 9.6W (Tc)	74 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI6443DQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 7.3A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.05W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock12,216	MOSFET (Metal Oxide)	30V	7.3A (Ta)	4.5V, 10V	3V @ 250µA	60nC @ 5V	-	±20V	-	1.05W (Ta)	12 mOhm @ 8.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)