Page 161 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SI4362BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 29A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,232
SI4362BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 29A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock426,624
SI4354DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,576
SI4354DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock535,212
SI4324DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 36A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,440
SI4324DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 36A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock450,192
SI4322DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 18A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,792
SI4320DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,144
SI4320DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock838,848
SI4196DY-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,336
SI4176DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000
SI4104DY-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 4.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock62,652
SI4102DY-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 3.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock184,788
SI3879DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,100
SI3879DV-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock539,220
SI3867DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 3.9A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock588,972
SI3853DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 1.6A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock36,000
SI3812DV-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 2A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock394,692
SI3495DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5.3A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock411,024
SI3493DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5.3A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock384,144

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI4362BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 29A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3W (Ta), 6.6W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 19.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,232	MOSFET (Metal Oxide)	30V	29A (Tc)	4.5V, 10V	2V @ 250µA	115nC @ 10V	4800pF @ 15V	±12V	-	3W (Ta), 6.6W (Tc)	4.6 mOhm @ 19.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4362BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 29A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3W (Ta), 6.6W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 19.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock426,624	MOSFET (Metal Oxide)	30V	29A (Tc)	4.5V, 10V	2V @ 250µA	115nC @ 10V	4800pF @ 15V	±12V	-	3W (Ta), 6.6W (Tc)	4.6 mOhm @ 19.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4354DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,576	MOSFET (Metal Oxide)	30V	9.5A (Ta)	4.5V, 10V	1.6V @ 250µA	10.5nC @ 4.5V	-	±12V	-	2.5W (Ta)	16.5 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4354DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 9.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock535,212	MOSFET (Metal Oxide)	30V	9.5A (Ta)	4.5V, 10V	1.6V @ 250µA	10.5nC @ 4.5V	-	±12V	-	2.5W (Ta)	16.5 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4324DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 36A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,440	MOSFET (Metal Oxide)	30V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	85nC @ 10V	3510pF @ 15V	±20V	-	3.5W (Ta), 7.8W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4324DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 36A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock450,192	MOSFET (Metal Oxide)	30V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	85nC @ 10V	3510pF @ 15V	±20V	-	3.5W (Ta), 7.8W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4322DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 18A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,792	MOSFET (Metal Oxide)	30V	18A (Tc)	4.5V, 10V	3V @ 250µA	38nC @ 10V	1640pF @ 15V	±20V	-	3.1W (Ta), 5.4W (Tc)	8.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4320DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,144	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	3V @ 250µA	70nC @ 4.5V	6500pF @ 15V	±20V	-	1.6W (Ta)	3 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4320DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock838,848	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	3V @ 250µA	70nC @ 4.5V	6500pF @ 15V	±20V	-	1.6W (Ta)	3 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4196DY-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 8A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta), 4.6W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,336	MOSFET (Metal Oxide)	20V	8A (Tc)	1.8V, 4.5V	1V @ 250µA	22nC @ 8V	830pF @ 10V	±8V	-	2W (Ta), 4.6W (Tc)	27 mOhm @ 8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4176DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.2V @ 250µA	15nC @ 10V	490pF @ 15V	±20V	-	2.4W (Ta), 5W (Tc)	20 mOhm @ 8.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4104DY-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 4.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock62,652	MOSFET (Metal Oxide)	100V	4.6A (Tc)	10V	4.5V @ 250µA	13nC @ 10V	446pF @ 50V	±20V	-	2.5W (Ta), 5W (Tc)	105 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4102DY-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 3.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock184,788	MOSFET (Metal Oxide)	100V	3.8A (Tc)	6V, 10V	4V @ 250µA	11nC @ 10V	370pF @ 50V	±20V	-	2.4W (Ta), 4.8W (Tc)	158 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI3879DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,100	MOSFET (Metal Oxide)	20V	5A (Tc)	2.5V, 4.5V	1.5V @ 250µA	14.5nC @ 10V	480pF @ 10V	±12V	-	2W (Ta), 3.3W (Tc)	70 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3879DV-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock539,220	MOSFET (Metal Oxide)	20V	5A (Tc)	2.5V, 4.5V	1.5V @ 250µA	14.5nC @ 10V	480pF @ 10V	±12V	-	2W (Ta), 3.3W (Tc)	70 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3867DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 3.9A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock588,972	MOSFET (Metal Oxide)	20V	3.9A (Ta)	2.5V, 4.5V	1.4V @ 250µA	11nC @ 4.5V	-	±12V	-	1.1W (Ta)	51 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3853DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 1.6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock36,000	MOSFET (Metal Oxide)	20V	1.6A (Ta)	2.5V, 4.5V	500mV @ 250µA (Min)	4nC @ 4.5V	-	±12V	Schottky Diode (Isolated)	830mW (Ta)	200 mOhm @ 1.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3812DV-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 2A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock394,692	MOSFET (Metal Oxide)	20V	2A (Ta)	2.5V, 4.5V	600mV @ 250µA (Min)	4nC @ 4.5V	-	±12V	Schottky Diode (Isolated)	830mW (Ta)	125 mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3495DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5.3A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 750mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock411,024	MOSFET (Metal Oxide)	20V	5.3A (Ta)	1.5V, 4.5V	750mV @ 250µA	38nC @ 4.5V	-	±5V	-	1.1W (Ta)	24 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3493DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5.3A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock384,144	MOSFET (Metal Oxide)	20V	5.3A (Ta)	1.8V, 4.5V	1V @ 250µA	32nC @ 4.5V	-	±8V	-	1.1W (Ta)	27 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3493DV-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 5.3A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,770,612	MOSFET (Metal Oxide)	20V	5.3A (Ta)	1.8V, 4.5V	1V @ 250µA	32nC @ 4.5V	-	±8V	-	1.1W (Ta)	27 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3483DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 4.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,840	MOSFET (Metal Oxide)	30V	4.7A (Ta)	4.5V, 10V	3V @ 250µA	35nC @ 10V	-	±20V	-	1.14W (Ta)	35 mOhm @ 6.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3481DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock192,012	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	-	±20V	-	1.14W (Ta)	48 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3473DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 5.9A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock622,488	MOSFET (Metal Oxide)	12V	5.9A (Ta)	1.8V, 4.5V	1V @ 250µA	33nC @ 4.5V	-	±8V	-	1.1W (Ta)	23 mOhm @ 7.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3457BDV-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 3.7A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock438,480	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	3V @ 250µA	19nC @ 10V	-	±20V	-	1.14W (Ta)	54 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3456CDV-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 7.7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,770,852	MOSFET (Metal Oxide)	30V	7.7A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 10V	460pF @ 15V	±20V	-	2W (Ta), 3.3W (Tc)	34 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3456CDV-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 7.7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock491,712	MOSFET (Metal Oxide)	30V	7.7A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 10V	460pF @ 15V	±20V	-	2W (Ta), 3.3W (Tc)	34 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3456BDV-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 4.5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock414,504	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	-	±20V	-	1.1W (Ta)	35 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6