Page 168 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SUD50N04-16P-E3
Vishay Siliconix

MOSFET N-CH 40V 9.8A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock90,000
SUD50N04-05L-E3
Vishay Siliconix

MOSFET N-CH 40V 115A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock78,924
SUD50N03-16P-GE3
Vishay Siliconix

MOSFET N-CH 30V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,976
SUD50N03-16P-E3
Vishay Siliconix

MOSFET N-CH 30V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,784
SUD50N03-12P-E3
Vishay Siliconix

MOSFET N-CH 30V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock127,572
SUD50N03-11-E3
Vishay Siliconix

MOSFET N-CH 30V 50A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,396
SUD50N03-06P-E3
Vishay Siliconix

MOSFET N-CH 30V 84A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock123,672
SUD50N025-06P-E3
Vishay Siliconix

MOSFET N-CH 25V 78A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock41,520
SUD45P03-15-E3
Vishay Siliconix

MOSFET P-CH 30V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock271,716
SUD40N02-3M3P-E3
Vishay Siliconix

MOSFET N-CH 20V 24.4A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
SUD40N02-08-E3
Vishay Siliconix

MOSFET N-CH 20V 40A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock384,000
SUD25N04-25-T4-E3
Vishay Siliconix

MOSFET N-CH 40V 25A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,012
SUD25N04-25-E3
Vishay Siliconix

MOSFET N-CH 40V 25A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,920
SUD08P06-155L-T4E3
Vishay Siliconix

MOSFET P-CH 60V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock69,480
SQM110P04-04L-GE3
Vishay Siliconix

MOSFET P-CH 40V 120A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock132,000
SQD35N05-26L-GE3
Vishay Siliconix

MOSFET N-CH 55V 30A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock205,056
SIR874DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 20A PPAK SO-8

Package: PowerPAK? SO-8

Stock4,352
SIR432DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 28.4A PPAK SO-8

Package: PowerPAK? SO-8

Stock36,132
SIR406DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock729,000
SIJ484DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

Package: PowerPAK? SO-8

Stock70,800

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SUD50N04-16P-E3	Vishay Siliconix	MOSFET N-CH 40V 9.8A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock90,000	MOSFET (Metal Oxide)	40V	9.8A (Ta), 20A (Tc)	4.5V, 10V	2.2V @ 250µA	60nC @ 10V	1655pF @ 20V	±16V	-	3.1W (Ta), 35.7W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N04-05L-E3	Vishay Siliconix	MOSFET N-CH 40V 115A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock78,924	MOSFET (Metal Oxide)	40V	115A (Tc)	4.5V, 10V	3V @ 250µA	135nC @ 10V	5600pF @ 25V	±20V	-	136W (Tc)	5.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-16P-GE3	Vishay Siliconix	MOSFET N-CH 30V TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,976	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	3V @ 250µA	13nC @ 4.5V	1150pF @ 25V	±20V	-	6.5W (Ta), 40.8W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-16P-E3	Vishay Siliconix	MOSFET N-CH 30V TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,784	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	3V @ 250µA	13nC @ 4.5V	1150pF @ 25V	±20V	-	6.5W (Ta), 40.8W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-12P-E3	Vishay Siliconix	MOSFET N-CH 30V TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock127,572	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	3V @ 250µA	42nC @ 10V	1600pF @ 25V	±20V	-	6.5W (Ta), 46.8W (Tc)	12 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-11-E3	Vishay Siliconix	MOSFET N-CH 30V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,396	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	800mV @ 250µA (Min)	20nC @ 5V	1130pF @ 25V	±20V	-	7.5W (Ta), 62.5W (Tc)	11 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-06P-E3	Vishay Siliconix	MOSFET N-CH 30V 84A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock123,672	MOSFET (Metal Oxide)	30V	84A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 4.5V	3100pF @ 25V	±20V	-	8.3W (Ta), 88W (Tc)	6.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N025-06P-E3	Vishay Siliconix	MOSFET N-CH 25V 78A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10.7W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock41,520	MOSFET (Metal Oxide)	25V	78A (Tc)	4.5V, 10V	2.4V @ 250µA	66nC @ 10V	2490pF @ 12V	±20V	-	10.7W (Ta), 65W (Tc)	6.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD45P03-15-E3	Vishay Siliconix	MOSFET P-CH 30V TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock271,716	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1V @ 250µA (Min)	125nC @ 10V	3200pF @ 25V	±20V	-	4W (Ta), 70W (Tc)	15 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD40N02-3M3P-E3	Vishay Siliconix	MOSFET N-CH 20V 24.4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 24.4A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6520pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	20V	24.4A (Ta), 40A (Tc)	4.5V, 10V	3V @ 250µA	160nC @ 10V	6520pF @ 10V	±20V	-	3.3W (Ta), 79W (Tc)	3.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD40N02-08-E3	Vishay Siliconix	MOSFET N-CH 20V 40A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock384,000	MOSFET (Metal Oxide)	20V	40A (Tc)	2.5V, 4.5V	600mV @ 250µA (Min)	35nC @ 4.5V	2660pF @ 20V	±12V	-	8.3W (Ta), 71W (Tc)	8.5 mOhm @ 20A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD25N04-25-T4-E3	Vishay Siliconix	MOSFET N-CH 40V 25A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,012	MOSFET (Metal Oxide)	40V	25A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	510pF @ 25V	±20V	-	3W (Ta), 33W (Tc)	25 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD25N04-25-E3	Vishay Siliconix	MOSFET N-CH 40V 25A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,920	MOSFET (Metal Oxide)	40V	25A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	510pF @ 25V	±20V	-	3W (Ta), 33W (Tc)	25 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD08P06-155L-T4E3	Vishay Siliconix	MOSFET P-CH 60V 8.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock69,480	MOSFET (Metal Oxide)	60V	8.4A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 10V	450pF @ 25V	±20V	-	1.7W (Ta), 20.8W (Tc)	155 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SQM110P04-04L-GE3	Vishay Siliconix	MOSFET P-CH 40V 120A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock132,000	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	330nC @ 10V	13980pF @ 20V	±20V	-	375W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQD35N05-26L-GE3	Vishay Siliconix	MOSFET N-CH 55V 30A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock205,056	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	18nC @ 5V	1175pF @ 25V	±20V	-	50W (Tc)	20 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR874DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 20A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,352	MOSFET (Metal Oxide)	25V	20A (Tc)	4.5V, 10V	2.2V @ 250µA	27nC @ 10V	985pF @ 15V	±20V	-	3.9W (Ta), 29.8W (Tc)	9.4 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR432DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 28.4A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 30.6 mOhm @ 8.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,132	MOSFET (Metal Oxide)	100V	28.4A (Tc)	7.5V, 10V	4V @ 250µA	32nC @ 10V	1170pF @ 50V	±20V	-	5W (Ta), 54W (Tc)	30.6 mOhm @ 8.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR406DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2083pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock729,000	MOSFET (Metal Oxide)	25V	40A (Tc)	4.5V, 10V	2.4V @ 250µA	50nC @ 10V	2083pF @ 10V	±20V	-	5W (Ta), 48W (Tc)	3.8 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIJ484DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock70,800	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	45nC @ 10V	1600pF @ 15V	±20V	-	5W (Ta), 27.7W (Tc)	6.3 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIJ400DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 32A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7765pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,000	MOSFET (Metal Oxide)	30V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	150nC @ 10V	7765pF @ 15V	±20V	-	5W (Ta), 69.4W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIHF8N50L-E3	Vishay Siliconix	MOSFET N-CH 500V 8A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 0V Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,080	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 250µA	34nC @ 0V	873pF @ 25V	±30V	-	40W (Tc)	1 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHB22N60S-E3	Vishay Siliconix	MOSFET N-CH 600V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,296	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 250µA	110nC @ 10V	2810pF @ 25V	±30V	-	250W (Tc)	190 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIE862DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (U) Package / Case: 10-PolarPAK? (U)	Package: 10-PolarPAK? (U)	Stock36,000	MOSFET (Metal Oxide)	30V	50A (Tc)	10V	2.2V @ 250µA	75nC @ 10V	3100pF @ 15V	±20V	-	5.2W (Ta), 104W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (U)	10-PolarPAK? (U)
SIE860DF-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (M) Package / Case: 10-PolarPAK? (M)	Package: 10-PolarPAK? (M)	Stock5,600	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	105nC @ 10V	4500pF @ 15V	±20V	-	5.2W (Ta), 104W (Tc)	2.1 mOhm @ 21.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (M)	10-PolarPAK? (M)
SIE854DF-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 14.2 mOhm @ 13.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock7,488	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4.4V @ 250µA	75nC @ 10V	3100pF @ 50V	±20V	-	5.2W (Ta), 125W (Tc)	14.2 mOhm @ 13.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIE848DF-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock20,436	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	138nC @ 10V	6100pF @ 15V	±20V	-	5.2W (Ta), 125W (Tc)	1.6 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIE844DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 44.5A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 12.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (U) Package / Case: 10-PolarPAK? (U)	Package: 10-PolarPAK? (U)	Stock4,544	MOSFET (Metal Oxide)	30V	44.5A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 10V	2150pF @ 15V	±20V	-	5.2W (Ta), 25W (Tc)	7 mOhm @ 12.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (U)	10-PolarPAK? (U)