Page 167 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SIE844DF-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 44.5A POLARPAK

Package: 10-PolarPAK? (U)

Stock2,880
SIE836DF-T1-E3
Vishay Siliconix

MOSFET N-CH 200V 18.3A POLARPAK

Package: 10-PolarPAK? (SH)

Stock6,800
SIE830DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A POLARPAK

Package: 10-PolarPAK? (S)

Stock4,272
SIE816DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock4,912
SIE816DF-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock3,696
SIE806DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock5,616
SIE804DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 150V 37A POLARPAK

Package: 10-PolarPAK? (SH)

Stock3,936
SIE800DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A POLARPAK

Package: 10-PolarPAK? (S)

Stock2,960
SIE726DF-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock7,888
SIB411DK-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 9A PPAK SC75-6L

Package: PowerPAK? SC-75-6L

Stock4,336
SI9434BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock11,868
SI9424BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,144
SI9410BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 6.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock14,448
SI8417DB-T2-E1
Vishay Siliconix

MOSFET P-CH 12V 14.5A 2X2 6MFP

Package: 6-MICRO FOOT?

Stock2,718,000
SI8405DB-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 3.6A 2X2 4-MFP

Package: 4-XFBGA, CSPBGA

Stock60,000
SI7888DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 9.4A PPAK SO-8

Package: PowerPAK? SO-8

Stock14,376
SI7888DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9.4A PPAK SO-8

Package: PowerPAK? SO-8

Stock258,048
SI7886ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 15A PPAK SO-8

Package: PowerPAK? SO-8

Stock7,392
SI7886ADP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 15A PPAK SO-8

Package: PowerPAK? SO-8

Stock301,284
SI7882DP-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 13A PPAK SO-8

Package: PowerPAK? SO-8

Stock458,316

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIE844DF-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 44.5A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 12.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (U) Package / Case: 10-PolarPAK? (U)	Package: 10-PolarPAK? (U)	Stock2,880	MOSFET (Metal Oxide)	30V	44.5A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 10V	2150pF @ 15V	±20V	-	5.2W (Ta), 25W (Tc)	7 mOhm @ 12.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (U)	10-PolarPAK? (U)
SIE836DF-T1-E3	Vishay Siliconix	MOSFET N-CH 200V 18.3A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (SH) Package / Case: 10-PolarPAK? (SH)	Package: 10-PolarPAK? (SH)	Stock6,800	MOSFET (Metal Oxide)	200V	18.3A (Tc)	10V	4.5V @ 250µA	41nC @ 10V	1200pF @ 100V	±30V	-	5.2W (Ta), 104W (Tc)	130 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (SH)	10-PolarPAK? (SH)
SIE830DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (S) Package / Case: 10-PolarPAK? (S)	Package: 10-PolarPAK? (S)	Stock4,272	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 250µA	115nC @ 10V	5500pF @ 15V	±12V	-	5.2W (Ta), 104W (Tc)	4.2 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (S)	10-PolarPAK? (S)
SIE816DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock4,912	MOSFET (Metal Oxide)	60V	60A (Tc)	10V	4.4V @ 250µA	77nC @ 10V	3100pF @ 30V	±20V	-	5.2W (Ta), 125W (Tc)	7.4 mOhm @ 19.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIE816DF-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock3,696	MOSFET (Metal Oxide)	60V	60A (Tc)	10V	4.4V @ 250µA	77nC @ 10V	3100pF @ 30V	±20V	-	5.2W (Ta), 125W (Tc)	7.4 mOhm @ 19.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIE806DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock5,616	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2V @ 250µA	250nC @ 10V	13000pF @ 15V	±12V	-	5.2W (Ta), 125W (Tc)	1.7 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIE804DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 37A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (SH) Package / Case: 10-PolarPAK? (SH)	Package: 10-PolarPAK? (SH)	Stock3,936	MOSFET (Metal Oxide)	150V	37A (Tc)	6V, 10V	3V @ 250µA	105nC @ 10V	3000pF @ 50V	±20V	-	5.2W (Ta), 125W (Tc)	38 mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (SH)	10-PolarPAK? (SH)
SIE800DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (S) Package / Case: 10-PolarPAK? (S)	Package: 10-PolarPAK? (S)	Stock2,960	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 10V	1600pF @ 15V	±20V	-	5.2W (Ta), 104W (Tc)	7.2 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (S)	10-PolarPAK? (S)
SIE726DF-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock7,888	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	3V @ 250µA	160nC @ 10V	7400pF @ 15V	±20V	-	5.2W (Ta), 125W (Tc)	2.4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SIB411DK-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 9A PPAK SC75-6L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	Package: PowerPAK? SC-75-6L	Stock4,336	MOSFET (Metal Oxide)	20V	9A (Tc)	1.8V, 4.5V	1V @ 250µA	15nC @ 8V	470pF @ 10V	±8V	-	2.4W (Ta), 13W (Tc)	66 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Single	PowerPAK? SC-75-6L
SI9434BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,868	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	18nC @ 4.5V	-	±8V	-	1.3W (Ta)	40 mOhm @ 6.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI9424BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5.6A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±9V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,144	MOSFET (Metal Oxide)	20V	5.6A (Ta)	2.5V, 4.5V	850mV @ 250µA	40nC @ 4.5V	-	±9V	-	1.25W (Ta)	25 mOhm @ 7.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI9410BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 6.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock14,448	MOSFET (Metal Oxide)	30V	6.2A (Ta)	4.5V, 10V	3V @ 250µA	23nC @ 10V	-	±20V	-	1.5W (Ta)	24 mOhm @ 8.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI8417DB-T2-E1	Vishay Siliconix	MOSFET P-CH 12V 14.5A 2X2 6MFP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot? Package / Case: 6-MICRO FOOT?	Package: 6-MICRO FOOT?	Stock2,718,000	MOSFET (Metal Oxide)	12V	14.5A (Tc)	1.8V, 4.5V	900mV @ 250µA	57nC @ 5V	2220pF @ 6V	±8V	-	2.9W (Ta), 6.57W (Tc)	21 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-Micro Foot?	6-MICRO FOOT?
SI8405DB-T1-E3	Vishay Siliconix	MOSFET P-CH 12V 3.6A 2X2 4-MFP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.47W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock60,000	MOSFET (Metal Oxide)	12V	3.6A (Ta)	1.8V, 4.5V	950mV @ 250µA	21nC @ 4.5V	-	±8V	-	1.47W (Ta)	55 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
SI7888DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9.4A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock14,376	MOSFET (Metal Oxide)	30V	9.4A (Ta)	4.5V, 10V	2V @ 250µA	10.5nC @ 5V	-	±12V	-	1.8W (Ta)	12 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7888DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 9.4A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock258,048	MOSFET (Metal Oxide)	30V	9.4A (Ta)	4.5V, 10V	2V @ 250µA	10.5nC @ 5V	-	±12V	-	1.8W (Ta)	12 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7886ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 15A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,392	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	1.5V @ 250µA	60nC @ 4.5V	6450pF @ 15V	±12V	-	1.9W (Ta)	4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7886ADP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 15A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock301,284	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	1.5V @ 250µA	60nC @ 4.5V	6450pF @ 15V	±12V	-	1.9W (Ta)	4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7882DP-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 13A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock458,316	MOSFET (Metal Oxide)	12V	13A (Ta)	2.5V, 4.5V	1.4V @ 250µA	30nC @ 4.5V	-	±8V	-	1.9W (Ta)	5.5 mOhm @ 17A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7860DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,732	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7860ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,456	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	9.5 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7856ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 15A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock104,988	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	3V @ 250µA	55nC @ 4.5V	-	±20V	-	1.9W (Ta)	3.7 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7856ADP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 15A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock889,572	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	3V @ 250µA	55nC @ 4.5V	-	±20V	-	1.9W (Ta)	3.7 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7840BDP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock357,240	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	21nC @ 4.5V	-	±20V	-	1.8W (Ta)	8.5 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7682DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 20A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.5W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock6,096	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	38nC @ 10V	1595pF @ 15V	±20V	-	5W (Ta), 27.5W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7682DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 20A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.5W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock2,463,180	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	38nC @ 10V	1595pF @ 15V	±20V	-	5W (Ta), 27.5W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7674DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,136	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	3V @ 250µA	90nC @ 10V	5910pF @ 15V	±20V	-	5.4W (Ta), 83W (Tc)	3.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8