Page 39 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SI6463BDQ-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 6.2A 8-TSSOP

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SQJQ144AE-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 575A PPAK 8 X 8

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SIHW21N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 17.4A TO247AD

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SI6435ADQ-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 4.7A 8-TSSOP

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SQJQ112ER-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 100 V (D-S)

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Stock15,789
SQJA82EP-T1_BE3
Vishay Siliconix

N-CHANNEL 80-V (D-S) 175C MOSFET

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SIRA01DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 26A/60A PPAK SO8

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Stock23,658
SI2323CDS-T1-BE3
Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

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Stock1,158
SISA01DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 22.4A/60A PPAK

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Stock5,343
SIHH20N50E-T1-GE3
Vishay Siliconix

MOSFET N-CH 500V 22A PPAK 8 X 8

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SQJ147ELP-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 90A PPAK SO-8

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Stock68,688
SISS46DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 12.5/45.3A PPAK

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Stock624
SQJ403BEEP-T1_BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) 175C MOSFET

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Stock8,895
SIHFZ48RS-GE3
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

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SQD40081EL_GE3
Vishay Siliconix

MOSFET P-CH 40V 50A TO252AA

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Stock6,063
SQJ418EP-T2_GE3
Vishay Siliconix

MOSFET N-CH 100V 48A PPAK SO-8

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SQSA12CENW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 100 V (D-S)

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Stock31,650
SIDR392DP-T1-RE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

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Stock11,460
SQS407ENW-T1_GE3
Vishay Siliconix

MOSFET P-CH 30V 16A PPAK1212-8W

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Stock86,949
SI6435ADQ-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 4.7A 8-TSSOP

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI6463BDQ-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 6.2A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 15mOhm @ 7.4A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.2A (Ta)	-	800mV @ 250µA	60 nC @ 5 V	-	-	-	-	15mOhm @ 7.4A, 4.5V	-	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
SQJQ144AE-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 575A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 575A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	575A (Tc)	10V	3.5V @ 250µA	145 nC @ 10 V	9020 pF @ 25 V	±20V	-	600W (Tc)	0.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
SIHW21N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 17.4A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	17.4A (Tc)	10V	4V @ 250µA	72 nC @ 10 V	1388 pF @ 100 V	±30V	-	32W (Tc)	235mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
SI6435ADQ-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 4.7A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4.7A (Ta)	-	1V @ 250µA (Min)	20 nC @ 5 V	-	-	-	-	30mOhm @ 5.5A, 10V	-	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
SQJQ112ER-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 100 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 296A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerSMD, Gull Wing	Package: -	Stock15,789	MOSFET (Metal Oxide)	100 V	296A (Tc)	10V	3.5V @ 250µA	272 nC @ 10 V	15945 pF @ 25 V	±20V	-	600W (Tc)	2.53mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	8-PowerSMD, Gull Wing
SQJA82EP-T1_BE3	Vishay Siliconix	N-CHANNEL 80-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	60 nC @ 10 V	3000 pF @ 25 V	±20V	-	68W (Tc)	8.2mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIRA01DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 26A/60A PPAK SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V Vgs (Max): +16V, -20V FET Feature: - Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock23,658	MOSFET (Metal Oxide)	30 V	26A (Ta), 60A (Tc)	4.5V, 10V	2.2V @ 250µA	112 nC @ 10 V	3490 pF @ 15 V	+16V, -20V	-	5W (Ta), 62.5W (Tc)	4.9mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SI2323CDS-T1-BE3	Vishay Siliconix	P-CHANNEL 20-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock1,158	MOSFET (Metal Oxide)	20 V	4.6A (Ta), 6A (Tc)	1.8V, 4.5V	1V @ 250µA	25 nC @ 4.5 V	1090 pF @ 10 V	±8V	-	1.25W (Ta), 2.5W (Tc)	39mOhm @ 4.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SISA01DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 22.4A/60A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 22.4A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V Vgs (Max): +16V, -20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock5,343	MOSFET (Metal Oxide)	30 V	22.4A (Ta), 60A (Tc)	4.5V, 10V	2.2V @ 250µA	84 nC @ 10 V	3490 pF @ 15 V	+16V, -20V	-	3.7W (Ta), 52W (Tc)	4.9mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SIHH20N50E-T1-GE3	Vishay Siliconix	MOSFET N-CH 500V 22A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2063 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 174W (Tc) Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	4V @ 250µA	84 nC @ 10 V	2063 pF @ 100 V	±30V	-	174W (Tc)	147mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 8 x 8	8-PowerTDFN
SQJ147ELP-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 90A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock68,688	MOSFET (Metal Oxide)	40 V	90A (Tc)	-	2.5V @ 250µA	120 nC @ 10 V	5500 pF @ 25 V	±20V	-	183W (Tc)	12.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SISS46DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 12.5/45.3A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock624	MOSFET (Metal Oxide)	100 V	12.5A (Ta), 45.3A (Tc)	7.5V, 10V	3.4V @ 250µA	42 nC @ 10 V	2140 pF @ 50 V	±20V	-	5W (Ta), 65.7W (Tc)	12.8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SQJ403BEEP-T1_BE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) 175C MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock8,895	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	164 nC @ 10 V	-	±20V	-	68W (Tc)	8.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIHFZ48RS-GE3	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	4V @ 250µA	110 nC @ 10 V	2400 pF @ 25 V	±20V	-	190W (Tc)	18mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQD40081EL_GE3	Vishay Siliconix	MOSFET P-CH 40V 50A TO252AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,063	MOSFET (Metal Oxide)	40 V	50A (Tc)	10V	2.5V @ 250µA	210 nC @ 10 V	9950 pF @ 25 V	±20V	-	71W (Tc)	8.5mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJ418EP-T2_GE3	Vishay Siliconix	MOSFET N-CH 100V 48A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	48A (Tc)	10V	3.5V @ 250µA	35 nC @ 10 V	1700 pF @ 25 V	±20V	-	68W (Tc)	14mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQSA12CENW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 100 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock31,650	MOSFET (Metal Oxide)	100 V	18A (Tc)	4.5V, 10V	2.5V @ 250µA	47 nC @ 10 V	2900 pF @ 25 V	±20V	-	62.5W (Tc)	22mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
SIDR392DP-T1-RE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock11,460	MOSFET (Metal Oxide)	30 V	82A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	188 nC @ 10 V	9530 pF @ 15 V	+20V, -16V	-	6.25W (Ta), 125W (Tc)	0.62mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SQS407ENW-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 16A PPAK1212-8W FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock86,949	MOSFET (Metal Oxide)	30 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	77 nC @ 10 V	4572 pF @ 20 V	±20V	-	62.5W (Tc)	10.8mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
SI6435ADQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 4.7A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4.7A (Ta)	-	1V @ 250µA (Min)	20 nC @ 5 V	-	-	-	-	30mOhm @ 5.5A, 10V	-	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
SIHD11N80AE-T1-GE3	Vishay Siliconix	N-CHANNEL 800V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	4V @ 250µA	42 nC @ 10 V	804 pF @ 100 V	±30V	-	78W (Tc)	450mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIR516DP-T1-RE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	16.8A (Ta), 63.7A (Tc)	7.5V, 10V	4V @ 250µA	27 nC @ 10 V	1920 pF @ 50 V	±20V	-	5W (Ta), 71.4W (Tc)	8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SI2367DS-T1-BE3	Vishay Siliconix	P-CHANNEL 20-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock7,980	MOSFET (Metal Oxide)	20 V	2.8A (Ta), 3.8A (Tc)	1.8V, 4.5V	1V @ 250µA	23 nC @ 8 V	561 pF @ 10 V	±8V	-	960mW (Ta), 1.7W (Tc)	66mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SISS10ADN-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 31.7A/109A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 31.7A (Ta), 109A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock89,295	MOSFET (Metal Oxide)	40 V	31.7A (Ta), 109A (Tc)	4.5V, 10V	2.4V @ 250µA	61 nC @ 10 V	3030 pF @ 20 V	+20V, -16V	-	4.8W (Ta), 56.8W (Tc)	2.65mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SIR608DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 45V 51A/208A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	45 V	51A (Ta), 208A (Tc)	4.5V, 10V	2.3V @ 250µA	167 nC @ 10 V	8900 pF @ 20 V	+20V, -16V	-	6.25W (Ta), 104W (Tc)	1.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIDR392DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 82A/100A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock35,529	MOSFET (Metal Oxide)	30 V	82A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	188 nC @ 10 V	9530 pF @ 15 V	+20V, -16V	-	6.25W (Ta), 125W (Tc)	0.62mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SIHF520STRR-GE3	Vishay Siliconix	MOSFET N-CH 100V 9.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	9.2A (Tc)	10V	4V @ 250µA	16 nC @ 10 V	360 pF @ 25 V	±20V	-	3.7W (Ta), 60W (Tc)	270mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQJA46EP-T2_GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	60A (Tc)	10V	3.5V @ 250µA	105 nC @ 10 V	5000 pF @ 25 V	±20V	-	68W (Tc)	3mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8