Page 42 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SIHG125N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 25A TO247AC

Package: -

Request a Quote
SIHG052N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 48A TO247AC

Package: -

Stock900
SQR40020ER_GE3
Vishay Siliconix

MOSFET N-CH 40V 100A TO252 REV

Package: -

Request a Quote
SQJQ141EL-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 40 V (D-S)

Package: -

Stock7,065
SQ3456CEV-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 30 V (D-S)

Package: -

Stock8,475
SIHG150N60E-GE3
Vishay Siliconix

E SERIES POWER MOSFET TO-247AC,

Package: -

Request a Quote
SI8819EDB-T2-E1
Vishay Siliconix

MOSFET P-CH 12V 2.9A 4MICRO FOOT

Package: -

Stock17,460
SIHD3N50DT1-GE3
Vishay Siliconix

MOSFET N-CH 500V 3A DPAK

Package: -

Request a Quote
SIHA18N60E-E3
Vishay Siliconix

MOSFET N-CHANNEL 600V 18A TO220

Package: -

Request a Quote
SQ4840CEY-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Package: -

Stock7,590
SI4435FDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 12.6A 8SOIC

Package: -

Stock7,881
SIRA52ADP-T1-RE3
Vishay Siliconix

MOSFET N-CH 40V 41.6A/131A PPAK

Package: -

Stock51,276
SIDR680DP-T1-RE3
Vishay Siliconix

N-CHANNEL 80-V (D-S) MOSFET

Package: -

Stock17,847
SQ2361AEES-T1_BE3
Vishay Siliconix

MOSFET P-CH 60V 2.8A SOT23-3

Package: -

Stock23,757
SIR164DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

Package: -

Request a Quote
SISS5808DN-T1-GE3
Vishay Siliconix

N-CHANNEL 80 V (D-S) MOSFET POWE

Package: -

Request a Quote
SIRS5100DP-T1-GE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

Package: -

Request a Quote
SIA472EDJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SC70-6

Package: -

Request a Quote
SIDR680DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 32.8A/100A PPAK

Package: -

Stock62,505
SIHB080N60E-GE3
Vishay Siliconix

E SERIES POWER MOSFET D2PAK (TO-

Package: -

Stock5,196

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIHG125N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 25A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	5V @ 250µA	47 nC @ 10 V	1533 pF @ 100 V	±30V	-	179W (Tc)	125mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG052N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 48A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock900	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	5V @ 250µA	101 nC @ 10 V	3380 pF @ 100 V	±30V	-	278W (Tc)	52mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SQR40020ER_GE3	Vishay Siliconix	MOSFET N-CH 40V 100A TO252 REV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Reverse Lead Package / Case: TO-252-4, DPAK (3 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	3.5V @ 250µA	130 nC @ 10 V	8000 pF @ 25 V	±20V	-	107W (Tc)	2.33mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK) Reverse Lead	TO-252-4, DPAK (3 Leads + Tab)
SQJQ141EL-T1_GE3	Vishay Siliconix	AUTOMOTIVE P-CHANNEL 40 V (D-S) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 390A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Stock7,065	MOSFET (Metal Oxide)	40 V	390A (Tc)	4.5V, 10V	2.5V @ 250µA	731 nC @ 10 V	62190 pF @ 25 V	±20V	-	600W (Tc)	2mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
SQ3456CEV-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 30 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock8,475	MOSFET (Metal Oxide)	30 V	7.8A (Tc)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	460 pF @ 15 V	±20V	-	4W (Tc)	35mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SIHG150N60E-GE3	Vishay Siliconix	E SERIES POWER MOSFET TO-247AC, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	5V @ 250µA	36 nC @ 10 V	1514 pF @ 100 V	±30V	-	179W (Tc)	155mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SI8819EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 12V 2.9A 4MICRO FOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Package / Case: 4-XFBGA	Package: -	Stock17,460	MOSFET (Metal Oxide)	12 V	2.9A (Ta)	1.5V, 3.7V	900mV @ 250µA	17 nC @ 8 V	650 pF @ 6 V	±8V	-	900mW (Ta)	80mOhm @ 1.5A, 3.7V	-55°C ~ 150°C (TJ)	Surface Mount	4-MICRO FOOT® (0.8x0.8)	4-XFBGA
SIHD3N50DT1-GE3	Vishay Siliconix	MOSFET N-CH 500V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	3A (Tc)	10V	5V @ 250µA	12 nC @ 10 V	175 pF @ 100 V	±30V	-	69W (Tc)	3.2Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHA18N60E-E3	Vishay Siliconix	MOSFET N-CHANNEL 600V 18A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4V @ 250µA	92 nC @ 10 V	1640 pF @ 100 V	±30V	-	34W (Tc)	202mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SQ4840CEY-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 40 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,590	MOSFET (Metal Oxide)	40 V	20.7A (Tc)	4.5V, 10V	2.5V @ 250µA	68 nC @ 10 V	2550 pF @ 20 V	±20V	-	7.1W (Tc)	9mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI4435FDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 12.6A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,881	MOSFET (Metal Oxide)	30 V	12.6A (Tc)	4.5V, 10V	2.2V @ 250µA	42 nC @ 10 V	1500 pF @ 15 V	±20V	-	4.8W (Tc)	19mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SIRA52ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 40V 41.6A/131A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock51,276	MOSFET (Metal Oxide)	40 V	41.6A (Ta), 131A (Tc)	4.5V, 10V	2.4V @ 250µA	100 nC @ 10 V	5500 pF @ 20 V	+20V, -16V	-	4.8W (Ta), 48W (Tc)	1.63mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIDR680DP-T1-RE3	Vishay Siliconix	N-CHANNEL 80-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock17,847	MOSFET (Metal Oxide)	80 V	32.8A (Ta), 100A (Tc)	7.5V, 10V	3.4V @ 250µA	105 nC @ 10 V	5150 pF @ 40 V	±20V	-	6.25W (Ta), 125W (Tc)	2.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SQ2361AEES-T1_BE3	Vishay Siliconix	MOSFET P-CH 60V 2.8A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock23,757	MOSFET (Metal Oxide)	60 V	2.8A (Tc)	4.5V, 10V	2.5V @ 250µA	15 nC @ 10 V	620 pF @ 30 V	±20V	-	2W (Tc)	170mOhm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIR164DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	123 nC @ 10 V	3950 pF @ 15 V	±20V	-	69W (Tc)	2.5mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SISS5808DN-T1-GE3	Vishay Siliconix	N-CHANNEL 80 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 66.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	18.3A (Ta), 66.6A (Tc)	7.5V, 10V	4V @ 250µA	24 nC @ 10 V	1210 pF @ 40 V	±20V	-	5W (Ta), 65.7W (Tc)	119mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SIRS5100DP-T1-GE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	39A (Ta), 225A (Tc)	7.5V, 10V	4V @ 250µA	102 nC @ 10 V	5400 pF @ 50 V	±20V	-	7.4W (Ta), 240W (Tc)	2.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIA472EDJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Tc)	2.5V, 4.5V	1.5V @ 250µA	36 nC @ 10 V	1265 pF @ 15 V	±12V	-	19.2W (Tc)	20mOhm @ 10.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
SIDR680DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 32.8A/100A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock62,505	MOSFET (Metal Oxide)	80 V	32.8A (Ta), 100A (Tc)	7.5V, 10V	3.4V @ 250µA	105 nC @ 10 V	5150 pF @ 40 V	±20V	-	6.25W (Ta), 125W (Tc)	2.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SIHB080N60E-GE3	Vishay Siliconix	E SERIES POWER MOSFET D2PAK (TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,196	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	5V @ 250µA	63 nC @ 10 V	2557 pF @ 100 V	±30V	-	227W (Tc)	80mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI4090BDY-T1-GE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) MOSFET SO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock14,781	MOSFET (Metal Oxide)	100 V	12.2A (Ta), 18.7A (Tc)	6V, 10V	4V @ 250µA	70 nC @ 10 V	3570 pF @ 50 V	±20V	-	3.1W (Ta), 7.4W (Tc)	10mOhm @ 12.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI1427EDH-T1-BE3	Vishay Siliconix	MOSFET P-CH 20V 2A/2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Stock8,952	MOSFET (Metal Oxide)	20 V	2A (Ta), 2A (Tc)	-	1V @ 250µA	21 nC @ 8 V	-	±8V	-	1.56W (Ta), 2.8W (Tc)	64mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
SQJ422EP-T1_BE3	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock26,619	MOSFET (Metal Oxide)	40 V	75A (Tc)	-	2.5V @ 250µA	100 nC @ 10 V	5000 pF @ 20 V	±20V	-	83W (Tc)	3.4mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SISHA04DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 30.9A/40A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock17,538	MOSFET (Metal Oxide)	30 V	30.9A (Ta), 40A (Tc)	4.5V, 10V	2.2V @ 250µA	77 nC @ 10 V	3595 pF @ 15 V	+20V, -16V	-	3.7W (Ta), 52W (Tc)	2.15mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
SIHB28N60EF-T5-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,400	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	4V @ 250µA	120 nC @ 10 V	2714 pF @ 100 V	±30V	-	250W (Tc)	123mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHB24N65ET1-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 250µA	122 nC @ 10 V	2740 pF @ 100 V	±30V	-	250W (Tc)	145mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHH085N60EF-T1GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	Package: -	Stock17,880	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	5V @ 250µA	63 nC @ 10 V	2733 pF @ 100 V	±30V	-	184W (Tc)	85mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 8 x 8	8-PowerTDFN
SQJ454EP-T1_BE3	Vishay Siliconix	N-CHANNEL 200-V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock16,500	MOSFET (Metal Oxide)	200 V	13A (Tc)	4.5V, 10V	2.5V @ 250µA	85 nC @ 10 V	2600 pF @ 25 V	±20V	-	68W (Tc)	145mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8