Page 5 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SQS840EN-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

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Stock17,904
SQD25N15-52-T4_GE3
Vishay Siliconix

MOSFET N-CH 150V 25A TO252AA

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SIHA2N80E-GE3
Vishay Siliconix

MOSFET N-CH 800V 2.8A TO220

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Stock45
SQJQ160E-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Stock17,175
SQ3469EV-T1_BE3
Vishay Siliconix

P-CHANNEL 20-V (D-S) 175C MOSFET

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Stock25,956
SISS5623DN-T1-GE3
Vishay Siliconix

P-CHANNEL 60 V (D-S) MOSFET POWE

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Stock34,728
SIHD6N65ET5-GE3
Vishay Siliconix

MOSFET N-CH 650V 7A TO252AA

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IRF530PBF-BE3
Vishay Siliconix

MOSFET N-CH 100V 14A TO220AB

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Stock2,517
V30410-T1-GE3
Vishay Siliconix

MOSFET N-CH SMD

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SI1469DH-T1-BE3
Vishay Siliconix

MOSFET P-CH 20V 3.2A/2.7A SC70-6

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Stock1,704
SIR5108DP-T1-RE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

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SIHF074N65E-GE3
Vishay Siliconix

E SERIES POWER MOSFET TO-220 FUL

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SISS26LDN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 23.7A/81.2A PPAK

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Stock3,357
SIHFR024-GE3
Vishay Siliconix

MOSFET N-CHANNEL 60V

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Stock5,661
SIA430DJT-T4-GE3
Vishay Siliconix

MOSFET N-CH 20V 12A/12A PPAK

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SISH407DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 15.4A/25A PPAK

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Stock81,474
SQS140ELNW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

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SI2308CDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 2.6A SOT23-3

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SQJ164ELP-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Stock17,994
SIS106DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 9.8A/16A PPAK

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Stock14,670

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SQS840EN-T1_BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock17,904	MOSFET (Metal Oxide)	40 V	12A (Tc)	4.5V, 10V	2.5V @ 250µA	22.5 nC @ 10 V	1031 pF @ 20 V	±20V	-	33W (Tc)	20mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SQD25N15-52-T4_GE3	Vishay Siliconix	MOSFET N-CH 150V 25A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	25A (Tc)	10V	4V @ 250µA	51 nC @ 10 V	2200 pF @ 25 V	±20V	-	107W (Tc)	52mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHA2N80E-GE3	Vishay Siliconix	MOSFET N-CH 800V 2.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock45	MOSFET (Metal Oxide)	800 V	2.8A (Tc)	10V	4V @ 250µA	19.6 nC @ 10 V	315 pF @ 100 V	±30V	-	29W (Tc)	2.75Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SQJQ160E-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 60 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 602A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16070 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Stock17,175	MOSFET (Metal Oxide)	60 V	602A (Tc)	10V	3.5V @ 250µA	275 nC @ 10 V	16070 pF @ 25 V	±20V	-	600W (Tc)	0.85mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
SQ3469EV-T1_BE3	Vishay Siliconix	P-CHANNEL 20-V (D-S) 175C MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock25,956	MOSFET (Metal Oxide)	20 V	8A (Tc)	4.5V, 10V	2.5V @ 25µA	27 nC @ 10 V	1020 pF @ 10 V	±20V	-	5W (Tc)	36mOhm @ 6.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SISS5623DN-T1-GE3	Vishay Siliconix	P-CHANNEL 60 V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 36.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock34,728	MOSFET (Metal Oxide)	60 V	10.5A (Ta), 36.3A (Tc)	4.5V, 10V	2.6V @ 250µA	33 nC @ 10 V	1575 pF @ 30 V	±20V	-	4.8W (Ta), 56.8W (Tc)	24mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SIHD6N65ET5-GE3	Vishay Siliconix	MOSFET N-CH 650V 7A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	4V @ 250µA	48 nC @ 10 V	820 pF @ 100 V	±30V	-	78W (Tc)	600mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF530PBF-BE3	Vishay Siliconix	MOSFET N-CH 100V 14A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,517	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	4V @ 250µA	26 nC @ 10 V	670 pF @ 25 V	±20V	-	88W (Tc)	160mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
V30410-T1-GE3	Vishay Siliconix	MOSFET N-CH SMD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI1469DH-T1-BE3	Vishay Siliconix	MOSFET P-CH 20V 3.2A/2.7A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Stock1,704	MOSFET (Metal Oxide)	20 V	3.2A (Ta), 2.7A (Tc)	-	1.5V @ 250µA	8.5 nC @ 4.5 V	470 pF @ 10 V	±12V	-	1.5W (Ta), 2.78W (Tc)	80mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
SIR5108DP-T1-RE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	15.4A (Ta), 55.9A (Tc)	7.5V, 10V	4V @ 250µA	23 nC @ 10 V	1150 pF @ 50 V	±20V	-	5.2W (Ta), 65.7W (Tc)	7.45mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIHF074N65E-GE3	Vishay Siliconix	E SERIES POWER MOSFET TO-220 FUL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	14A (Tc)	10V	5V @ 250µA	80 nC @ 10 V	2904 pF @ 100 V	±30V	-	39W (Tc)	79mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SISS26LDN-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 23.7A/81.2A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock3,357	MOSFET (Metal Oxide)	60 V	23.7A (Ta), 81.2A (Tc)	4.5V, 10V	2.5V @ 250µA	48 nC @ 10 V	1980 pF @ 30 V	±20V	-	4.8W (Ta), 57W (Tc)	4.3mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SIHFR024-GE3	Vishay Siliconix	MOSFET N-CHANNEL 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,661	MOSFET (Metal Oxide)	60 V	14A (Tc)	10V	4V @ 250µA	25 nC @ 10 V	640 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	100mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIA430DJT-T4-GE3	Vishay Siliconix	MOSFET N-CH 20V 12A/12A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	12A (Ta), 12A (Tc)	4.5V, 10V	3V @ 250µA	18 nC @ 10 V	800 pF @ 10 V	±20V	-	3.5W (Ta), 19.2W (Tc)	13.5mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
SISH407DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 15.4A/25A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock81,474	MOSFET (Metal Oxide)	20 V	15.4A (Ta), 25A (Tc)	1.8V, 4.5V	1V @ 250µA	93.8 nC @ 8 V	2760 pF @ 10 V	±8V	-	3.6W (Ta), 33W (Tc)	9.5mOhm @ 15.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
SQS140ELNW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 40 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 153A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK® 1212-8SLW Package / Case: PowerPAK® 1212-8SLW	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	153A (Tc)	4.5V, 10V	2.5V @ 250µA	80 nC @ 10 V	4051 pF @ 25 V	±20V	-	119W (Tc)	2.53mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8SLW	PowerPAK® 1212-8SLW
SI2308CDS-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 2.6A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	2.6A (Tc)	4.5V, 10V	3V @ 250µA	4 nC @ 10 V	105 pF @ 30 V	±20V	-	1.6W (Tc)	144mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SQJ164ELP-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 60 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,994	MOSFET (Metal Oxide)	60 V	75A (Tc)	4.5V, 10V	2.5V @ 250µA	57 nC @ 10 V	3100 pF @ 25 V	±20V	-	187W (Tc)	12mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIS106DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 9.8A/16A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock14,670	MOSFET (Metal Oxide)	60 V	9.8A (Ta), 16A (Tc)	7.5V, 10V	4V @ 250µA	13.5 nC @ 10 V	540 pF @ 30 V	±20V	-	3.2W (Ta), 24W (Tc)	18.5mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SIHP15N80AEF-GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock6,633	MOSFET (Metal Oxide)	800 V	13A (Tc)	10V	4V @ 250µA	54 nC @ 10 V	1128 pF @ 100 V	±30V	-	156W (Tc)	350mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SQD40N10-25-T4_GE3	Vishay Siliconix	MOSFET N-CH 100V 40A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	70 nC @ 10 V	3380 pF @ 25 V	±20V	-	136W (Tc)	25mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJ402EP-T1_BE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock20,847	MOSFET (Metal Oxide)	100 V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	51 nC @ 10 V	2286 pF @ 25 V	±20V	-	83W (Tc)	11mOhm @ 10.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIR182DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69.4W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock171	MOSFET (Metal Oxide)	60 V	60A (Tc)	7.5V, 10V	3.6V @ 250µA	64 nC @ 10 V	3250 pF @ 30 V	±20V	-	69.4W (Tc)	2.8mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIHP080N60E-GE3	Vishay Siliconix	E SERIES POWER MOSFET TO-220AB, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,589	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	5V @ 250µA	63 nC @ 10 V	2557 pF @ 100 V	±30V	-	227W (Tc)	80mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SQS411ENW-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 16A PPAK1212-8W FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3191 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39.5W (Tc) Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock5,970	MOSFET (Metal Oxide)	40 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	50 nC @ 10 V	3191 pF @ 25 V	±20V	-	39.5W (Tc)	27.3mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
IRF9510PBF-BE3	Vishay Siliconix	MOSFET P-CH 100V 4A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock16,821	MOSFET (Metal Oxide)	100 V	4A (Tc)	-	4V @ 250µA	8.7 nC @ 10 V	200 pF @ 25 V	±20V	-	43W (Tc)	1.2Ohm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHJ690N60E-T1-GE3	Vishay Siliconix	MOSFET N-CH 600V 5.6A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	5.6A (Tc)	10V	5V @ 250µA	12 nC @ 10 V	347 pF @ 100 V	±30V	-	48W (Tc)	700mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8