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Vishay Siliconix |
MOSFET N-CH 40V 27.9A/96A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 27.9A (Ta), 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 3.42mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock17,970 |
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MOSFET (Metal Oxide) | 40 V | 27.9A (Ta), 96A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 50 nC @ 10 V | 2530 pF @ 20 V | +20V, -16V | - | 4.8W (Ta), 56.8W (Tc) | 3.42mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 12V 12A PPAK SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 19W (Tc)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6 Single
- Package / Case: PowerPAK® SC-70-6
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Package: - |
Stock8,700 |
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MOSFET (Metal Oxide) | 12 V | 12A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 57 nC @ 8 V | 1800 pF @ 10 V | ±8V | - | 19W (Tc) | 29mOhm @ 6.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7570 pF @ 10 V
- Vgs (Max): +16V, -12V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Rds On (Max) @ Id, Vgs: 0.76mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 155 nC @ 10 V | 7570 pF @ 10 V | +16V, -12V | - | 83.3W (Tc) | 0.76mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 27.6A/40A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Stock17,235 |
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MOSFET (Metal Oxide) | 30 V | 27.6A (Ta), 40A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 58 nC @ 10 V | 2455 pF @ 15 V | +20V, -16V | - | 3.7W (Ta), 46.3W (Tc) | 2.7mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
N-CHANNEL 25-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock35,994 |
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MOSFET (Metal Oxide) | 25 V | 79A (Ta), 100A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 170 nC @ 10 V | 8150 pF @ 10 V | +20V, -16V | - | 6.25W (Ta), 125W (Tc) | 0.67mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Vishay Siliconix |
N-CHANNEL 80 V (D-S) 175C MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock23,730 |
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MOSFET (Metal Oxide) | 80 V | 34.2A (Ta), 153A (Tc) | 7.5V, 10V | 4V @ 250µA | 60 nC @ 10 V | 3020 pF @ 40 V | ±20V | - | 7.5W (Ta), 150W (Tc) | 2.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 100A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 110 nC @ 10 V | 5500 pF @ 10 V | ±20V | - | 150W (Tc) | 3.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 8A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock30 |
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MOSFET (Metal Oxide) | 40 V | 8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.4 nC @ 10 V | 500 pF @ 25 V | ±20V | - | 3W (Tc) | 26.3mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
E SERIES POWER MOSFET TO-220AB,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock3,024 |
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MOSFET (Metal Oxide) | 800 V | 4.4A (Tc) | 10V | 4V @ 250µA | 16.5 nC @ 10 V | 321 pF @ 100 V | ±30V | - | 62.5W (Tc) | 1.35Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,302 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 165 nC @ 20 V | 8800 pF @ 25 V | ±20V | - | 107W (Tc) | 2.2mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 25V 79A/100A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 79A (Ta), 100A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 170 nC @ 10 V | 8150 pF @ 10 V | +20V, -16V | - | 6.25W (Ta), 125W (Tc) | 0.67mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 4V @ 250µA | 40 nC @ 10 V | 680 pF @ 100 V | ±30V | - | 78W (Tc) | 600mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 60A PPAK1212-8S
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 65.8W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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Package: - |
Stock240 |
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MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 111 nC @ 10 V | 4380 pF @ 15 V | ±25V | - | 65.8W (Tc) | 5.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 5V @ 250µA | 38 nC @ 10 V | 1465 pF @ 100 V | ±30V | - | 156W (Tc) | 155mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 30.6A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 14.7W (Tc)
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock51,216 |
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MOSFET (Metal Oxide) | 30 V | 30.6A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 21.5 nC @ 10 V | 1000 pF @ 15 V | +20V, -16V | - | 14.7W (Tc) | 8.7mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock486 |
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MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | - | 4V @ 250µA | 12 nC @ 10 V | 270 pF @ 25 V | ±20V | - | 43W (Tc) | 500mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
LOGIC MOSFET N-CHANNEL 60V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
Stock6,285 |
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MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4V, 5V | 2V @ 250µA | 18 nC @ 5 V | 870 pF @ 25 V | ±10V | - | 2.5W (Ta), 42W (Tc) | 100mOhm @ 8.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
N-CHANNEL 30-V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 63W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Stock28,056 |
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MOSFET (Metal Oxide) | 30 V | 26A (Ta), 104A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 36.2 nC @ 10 V | 1710 pF @ 15 V | +20V, -16V | - | 3.8W (Ta), 63W (Tc) | 3.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 7.5A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Tc)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock10,569 |
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MOSFET (Metal Oxide) | 30 V | 7.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23.5 nC @ 10 V | 870 pF @ 15 V | ±20V | - | 4W (Tc) | 43mOhm @ 5.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock534 |
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MOSFET (Metal Oxide) | 60 V | 17A (Tc) | - | 4V @ 250µA | 25 nC @ 10 V | 640 pF @ 25 V | ±20V | - | 60W (Tc) | 100mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
N-CHANNEL 30-V (D-S) 175C MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 39 nC @ 10 V | 1865 pF @ 25 V | ±20V | - | 62W (Tc) | 8.5mOhm @ 16.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CHANNEL 12V 15A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock24,462 |
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MOSFET (Metal Oxide) | 12 V | 15A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 38 nC @ 4.5 V | 3600 pF @ 6 V | ±8V | - | 6W (Tc) | 22mOhm@ 13.5A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
N-CHANNEL 80-V (D-S) 175C MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8 Dual
- Package / Case: PowerPAK® SO-8 Dual
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 80 V | 46A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 35 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 55W (Tc) | 12.5mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 7.5A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Tc)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 7.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23.5 nC @ 10 V | 870 pF @ 15 V | ±20V | - | 4W (Tc) | 43mOhm @ 5.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 42.5 nC @ 10 V | 1390 pF @ 15 V | ±20V | Schottky Diode (Body) | 52W (Tc) | 5mOhm @ 10A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 4V @ 250µA | 14 nC @ 10 V | 260 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 800mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
N-CHANNEL 200V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 4V @ 250µA | 14 nC @ 10 V | 260 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 800mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 150V 25A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 25A (Tc) | 10V | 4V @ 250µA | 60 nC @ 10 V | 2360 pF @ 25 V | ±20V | - | 107W (Tc) | 52mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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