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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,280 |
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MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 3V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | ±16V | - | 42W (Tc) | 9.5 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 60V 25A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-4L
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock2,256 |
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MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.8nC @ 10V | 492pF @ 25V | ±20V | - | 2W (Ta) | 50 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Diodes Incorporated |
MOSFET NCH 60V 55A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1016pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,568 |
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MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 3V @ 250µA | 19.7nC @ 10V | 1016pF @ 30V | ±20V | - | 1.6W (Ta), 53W (Tc) | 23 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 12A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock304,380 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 20V | 2V @ 250µA | 30.7nC @ 10V | 1655pF @ 20V | ±25V | - | 2W (Ta) | 16 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 30V 16A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2096pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,600 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2V @ 250µA | 43.7nC @ 10V | 2096pF @ 15V | ±20V | - | 2.5W (Ta) | 9 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 20V 12A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2555pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock224,940 |
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MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.5V, 10V | 1.2V @ 250µA | 58.3nC @ 10V | 2555pF @ 10V | ±12V | - | 2W (Ta) | 8 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock12,852 |
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MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 10V | 2.4V @ 1mA | - | 75pF @ 25V | ±20V | - | 700mW (Ta) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.45A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock46,320 |
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MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 2.4V @ 1mA | - | 75pF @ 18V | ±20V | - | 700mW (Ta) | 2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 12A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock5,888 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 3V @ 250µA | 14nC @ 10V | 886pF @ 15V | ±20V | - | 800mW (Ta) | 10 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 300V 0.55A 6UDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 300mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock7,408 |
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MOSFET (Metal Oxide) | 300V | 550mA (Ta) | 2.7V, 10V | 2.8V @ 250µA | 7.6nC @ 10V | 187.3pF @ 25V | ±20V | - | 630mW (Ta) | 4 Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V TSOT26
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,232 |
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MOSFET (Metal Oxide) | 60V | 7.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | ±20V | - | 1.8W (Ta) | 105 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-WLB1010-4
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 218pF @ 10V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 1.4W
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1010-4
- Package / Case: 4-UFBGA, WLBGA
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Package: 4-UFBGA, WLBGA |
Stock4,496 |
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MOSFET (Metal Oxide) | 60V | 4.6A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 2.5nC @ 4.5V | 218pF @ 10V | -6V | - | 1.4W | 45 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 | 4-UFBGA, WLBGA |
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Diodes Incorporated |
MOSFET P-CH 20V 17.5A POWERDI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,776 |
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MOSFET (Metal Oxide) | 20V | 17.5A (Ta), 40A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 200nC @ 10V | 7500pF @ 10V | ±10V | - | 2.3W (Ta) | 5.5 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,384 |
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MOSFET (Metal Oxide) | 60V | 24A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.8nC @ 10V | 584pF @ 25V | ±20V | - | 2.9W (Ta) | 50 mOhm @ 5.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 30V POWERDI3333-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 18.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock3,664 |
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MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 11.3nC @ 10V | 580pF @ 15V | ±25V | - | 1W (Ta) | 18.6 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 31W (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,744 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | ±25V | - | 31W (Ta) | 10 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 31W (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,672 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | ±25V | - | 31W (Ta) | 10 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 17.6A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,016 |
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MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | ±20V | - | 900mW (Ta) | 4.6 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 501V 650V TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,288 |
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MOSFET (Metal Oxide) | 600V | 2.8A (Tc) | 10V | 4V @ 250µA | 12.6nC @ 10V | 354pF @ 25V | ±30V | - | 41W (Tc) | 3.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 20V 9A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 730mW (Ta)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock4,192 |
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MOSFET (Metal Oxide) | 20V | 9A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | ±8V | - | 730mW (Ta) | 16 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,768 |
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MOSFET (Metal Oxide) | 60V | 7.8A (Tc) | 4.5V, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | ±20V | - | 1.2W (Ta) | 105 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 100V 4.2A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 980mW (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,624 |
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MOSFET (Metal Oxide) | 100V | 4.2A (Ta) | 6V, 10V | 3V @ 250µA | 25.2nC @ 10V | 1172pF @ 50V | ±20V | - | 980mW (Ta) | 80 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 984.7pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,344 |
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MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 17.1nC @ 10V | 984.7pF @ 30V | ±20V | - | 2.7W (Ta) | 110 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock6,528 |
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MOSFET (Metal Oxide) | 24V | 80A (Tc) | 2.5V, 10V | 1.45V @ 250µA | 53.7nC @ 10V | 1683pF @ 15V | ±12V | - | 3W (Ta) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 60V 24A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,800 |
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MOSFET (Metal Oxide) | 60V | 24A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.8nC @ 10V | 584pF @ 25V | ±20V | - | 1.5W (Ta) | 50 mOhm @ 5.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V TSOT26
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,216 |
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MOSFET (Metal Oxide) | 60V | 7.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | ±20V | - | 1.8W (Ta) | 105 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 30V 10.4A DFN2523-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4414pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2523-6
- Package / Case: 6-PowerUDFN
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Package: 6-PowerUDFN |
Stock5,968 |
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MOSFET (Metal Oxide) | 30V | 10.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 90nC @ 10V | 4414pF @ 15V | ±25V | - | 1W (Ta) | 14 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2523-6 | 6-PowerUDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,104 |
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MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | ±20V | - | 2.8W (Ta) | 25 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |